Cypress Semiconductor CY7C1018DV33 Manuale utente
1-Mbit (128K x 8) Static RAM
CY7C1018DV33
Cypress Semiconductor Corporation • 198 Champion Court • San Jose,CA 95134-1709 • 408-943-2600
Document #: 38-05465 Rev. *D Revised November 8, 2006
Features
• Pin- and function-compatible with CY7C1018CV33
• High speed
—t
AA = 10 ns
• Low Active Power
—I
CC = 60 mA @ 10 ns
• Low CMOS Standby Power
—I
SB2 = 3 mA
• 2.0V Data retention
• Automatic power-down when deselected
• CMOS for optimum speed/power
• Center power/ground pinout
• Easy memory expansion with CE and OE options
• Available in Pb-free 32-pin 300-Mil wide Molded SOJ
Functional Description[1]
The CY7C1018DV33 is a high-performance CMOS static
RAM organized as 131,072 words by 8 bits. Easy memory
expansion is provided by an active LOW Chip Enable (CE), an
active LOW Output Enable (OE), and tri-state drivers. This
device has an automatic power-down feature that significantly
reduces power consumption when deselected.
Writing to the device is accomplished by taking Chip Enable
(CE) and Write Enable (WE) inputs LOW. Data on the eight I/O
pins (I/O0through I/O7) is then written into the location
specified on the address pins (A0through A16).
Reading from the device is accomplished by taking Chip
Enable (CE) and Output Enable (OE) LOW while forcing Write
Enable (WE) HIGH. Under these conditions, the contents of
the memory location specified by the address pins will appear
on the I/O pins.
The eight input/output pins (I/O0through I/O7) are placed in a
high-impedance state when the device is deselected (CE
HIGH), the outputs are disabled (OE HIGH), or during a write
operation (CE LOW, and WE LOW).
The CY7C1018DV33 is available in Pb-free 32-pin 300-Mil
wide Molded SOJ.
Logic Block Diagram
A1
A2
A3
A4
A5
A6
A7
A8
COLUMN
DECODER
ROW DECODER
SENSE AMPS
INPUTBUFFER
POWER
DOWN
WE
OE
I/O0
CE
I/O1
I/O2
I/O3
I/O7
I/O6
I/O5
I/O4
A0
A13
A11
A12
A9
A10
128K × 8
ARRAY
A14
A15
A16
1
2
3
4
5
6
7
8
9
10
11
14 19
20
24
23
22
21
25
28
27
26
Top View
SOJ
12
13
29
32
31
30
16
15 17
18
A
7
A
1
A
2
A
3
CE
I/O
0
I/O
1
V
CC
A
13
A
16
A
15
OE
I/O
7
I/O
6
A
12
A
11
A
10
A
9
I/O
2
A
0
A
4
A
5
A
6
I/O
4
V
CC
I/O
5
A
8
I/O
3
WE
V
SS
A
14
V
SS
Pin Configuration
Note
1. For guidelines on SRAMsystem designs, please refer to the ‘System Design Guidelines’ Cypress application note, available on the internet at www.cypress.com.
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CY7C1018DV33
Document #: 38-05465 Rev. *D Page 2 of 9
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature .................................–65°C to +150°C
Ambient Temperature with
Power Applied.............................................–55°C to +125°C
Supply Voltage on VCC to Relative GND[2] ...–0.3V to + 4.6V
DC Voltage Applied to Outputs[2]
in High-Z State.......................................–0.3V to VCC + 0.3V
DC Input Voltage[2] ................................–0.3V to VCC + 0.3V
Current into Outputs (LOW).........................................20 mA
Static Discharge Voltage...........................................> 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current.....................................................> 200 mA
Selection Guide
–10 (Industrial) Unit
Maximum Access Time 10 ns
Maximum Operating Current 60 mA
Maximum Standby Current 3 mA
Operating Range
Range Ambient
Temperature VCC Speed
Industrial –40°C to +85°C 3.3V ±0.3V 10 ns
DC Electrical Characteristics Over the Operating Range
Parameter Description Test Conditions –10 (Industrial) Unit
Min. Max.
VOH Output HIGH Voltage VCC = Min.,
IOH = –4.0 mA 2.4 V
VOL Output LOW Voltage VCC = Min.,
IOL = 8.0 mA 0.4 V
VIH Input HIGH Voltage 2.0 VCC + 0.3 V
VIL Input LOW Voltage[2] –0.3 0.8 V
IIX Input Leakage Current GND < VI< VCC –1 +1 µA
IOZ Output Leakage Current GND < VI <VCC, Output Disabled –1 +1 µA
ICC VCC Operating Supply Current VCC = Max.,
IOUT = 0 mA,
f = fMAX = 1/tRC
100MHz 60 mA
83MHz 55 mA
66MHz 45 mA
40MHz 30 mA
ISB1 Automatic CE Power-down
Current—TTL Inputs Max. VCC, CE > VIH
VIN > VIH or VIN < VIL, f = fMAX 10 mA
ISB2 Automatic CE Power-down
Current—CMOS Inputs Max. VCC, CE > VCC – 0.3V,
VIN > VCC – 0.3V, or VIN < 0.3V, f = 0 3mA
Note
2. VIL (min.) = –2.0V and VIH(max) = VCC + 1V for pulse durations of less than 5 ns.
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CY7C1018DV33
Document #: 38-05465 Rev. *D Page 3 of 9
Capacitance[3]
Parameter Description Test Conditions Max. Unit
CIN Input Capacitance TA= 25°C, f = 1 MHz, VCC = 3.3V 8 pF
COUT Output Capacitance 8 pF
Thermal Resistance[3]
Parameter Description Test Conditions 400-Mil
Wide SOJ Unit
ΘJA Thermal Resistance
(Junction to Ambient) Still Air, soldered on a 3 × 4.5 inch,
four-layer printed circuit board 57.61 °C/W
ΘJC Thermal Resistance
(Junction to Case) 40.53 °C/W
AC Test Loads and Waveforms[4]
90%
10%
3.0V
GND
90%
10%
ALL INPUT PULSES
* CAPACITIVE LOAD CONSISTS
OF ALL COMPONENTS OF THE
TEST ENVIRONMENT Rise Time: 1 V/ns Fall Time: 1 V/ns
30 pF*
OUTPUT
Z = 50
Ω
50Ω
1.5V (b)
(a)
3.3V
OUTPUT
5 pF
(c)
R 317Ω
R2
351Ω
High-Z characteristics:
Notes
3. Tested initially and after any design or process changes that may affect these parameters.
4. AC characteristics (except High-Z) are tested using the load conditions shown in Figure (a). High-Z characteristics are tested for all speeds using the test load
shown in Figure (c).
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CY7C1018DV33
Document #: 38-05465 Rev. *D Page 4 of 9
AC Switching CharacteristicsOver the Operating Range [5]
Parameter Description –10 (Industrial) Unit
Min. Max.
Read Cycle
tpower[6] VCC(typical) to the first access 100 µs
tRC Read Cycle Time 10 ns
tAA Address to Data Valid 10 ns
tOHA Data Hold from Address Change 3 ns
tACE CE LOW to Data Valid 10 ns
tDOE OE LOW to Data Valid 5 ns
tLZOE OE LOW to Low-Z 0 ns
tHZOE OE HIGH to High-Z[7, 8] 5ns
tLZCE CE LOW to Low-Z[8] 3ns
tHZCE CE HIGH to High-Z[7, 8] 5ns
tPU[9] CE LOW to Power-up 0 ns
tPD[9] CE HIGH to Power-down 10 ns
Write Cycle[10, 11]
tWC Write Cycle Time 10 ns
tSCE CE LOW to Write End 8 ns
tAW Address Set-up to Write End 8 ns
tHA Address Hold from Write End 0 ns
tSA Address Set-up to Write Start 0 ns
tPWE WE Pulse Width 7 ns
tSD Data Set-up to Write End 5 ns
tHD Data Hold from Write End 0 ns
tLZWE WE HIGH to Low-Z[8] 3ns
tHZWE WE LOW to High-Z[7, 8] 5ns
Notes
5. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V.
6. tPOWER gives the minimum amount of time that the power supply should be at typical VCC values until the first memory access can be performed.
7. tHZOE, tHZCE, and tHZWE are specified with a load capacitance of 5 pF as in (c) of AC Test Loads. Transition is measured when the outputs enter a high impedance state.
8. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device.
9. This parameter is guaranteed by design and is not tested.
10.The internal Write time of the memory is defined by the overlap of CELOW and WE LOW. CE and WE must be LOW to initiate a Write, and the transition of any of these
signals can terminate the Write. The input data set-up and hold timing should be referenced to the leading edge of the signal that terminates the Write.
11. The minimum Write cycle time for Write Cycle No. 3 (WE controlled, OE LOW) is the sum of tHZWE and tSD.
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CY7C1018DV33
Document #: 38-05465 Rev. *D Page 5 of 9
Data Retention Characteristics (Over the Operating Range)
Parameter Description Conditions Min. Max. Unit
VDR VCC for Data Retention 2 V
ICCDR Data Retention Current VCC = VDR = 2.0V, CE > VCC – 0.3V,
VIN > VCC – 0.3V or VIN < 0.3V 3mA
tCDR [3] Chip Deselect to Data Retention Time 0 ns
tR[12] Operation Recovery Time tRC ns
Data Retention Waveform
Switching Waveforms
Read Cycle No. 1 (Address Transition Controlled)[13, 14]
Read Cycle No. 2 (OE Controlled)[14, 15]
3.0V3.0V
tCDR
VDR > 2V
DATA RETENTION MODE
tR
CE
VCC
PREVIOUS DATA VALID DATA VALID
RC
tAA
tOHA
tRC
ADDRESS
DATA OUT
50%
50%
DATA VALID
tRC
tACE
tDOE
tLZOE
tLZCE
tPU
HIGH IMPEDANCE
tHZOE tHZCE
tPD
HIGH
ICC
ISB
IMPEDANCE
OE
CE
ADDRESS
DATA OUT
VCC
SUPPLY
CURRENT
Notes
12.Full device operation requires linear VCC ramp from VDR to VCC(min.) >50 µs or stable at VCC(min.) >50 µs.
13.Device is continuously selected. OE, CE = VIL.
14.WE is HIGH for Read cycle.
15.Address valid prior to or coincident with CEtransition LOW.
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CY7C1018DV33
Document #: 38-05465 Rev. *D Page 6 of 9
Write Cycle No. 1 (CE Controlled)[16, 17]
Write Cycle No. 2 (WE Controlled, OE HIGH During Write)[16, 17]
Switching Waveforms (continued)
tWC
DATA VALID
tAW
tSA
tPWE
tHA
tHD
tSD
tSCE
tSCE
CE
WE
DATA I/O
ADDRESS
tHD
tSD
tPWE
tSA
tHA
tAW
tSCE
tWC
tHZOE
DATAIN VALID
NOTE 18
CE
ADDRESS
WE
DATA I/O
OE
Notes
16.Data I/O is high impedance if OE= VIH.
17.If CEgoes HIGH simultaneously with WE going HIGH, the output remains in a high-impedance state.
18.During this period the I/Os are in the output state and input signals should not be applied.
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CY7C1018DV33
Document #: 38-05465 Rev. *D Page 7 of 9
Write Cycle No. 3 (WE Controlled, OE LOW)[11, 17]
Truth Table
CE OE WE I/O0–I/O7Mode Power
H X X High-Z Power-down Standby (ISB)
L L H Data Out Read Active (ICC)
L X L Data In Write Active (ICC)
L H H High-Z Selected, Outputs Disabled Active (ICC)
Ordering Information
Speed
(ns) Ordering Code Package
Diagram Package Type Operating
Range
10 CY7C1018DV33-10VXI 51-85041 32-pin (300-Mil) Molded SOJ (Pb-free) Industrial
Please contact your local Cypress sales representative for availability of these parts.
Switching Waveforms (continued)
DATA VALID
tHD
tSD
tLZWE
tPWE
tSA
tHA
tAW
tSCE
tWC
tHZWE
NOTE 18
CE
ADDRESS
WE
DATA I/O
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CY7C1018DV33
Document #: 38-05465 Rev. *D Page 8 of 9
© Cypress Semiconductor Corporation, 2006. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use
of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be
used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its
products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress
products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Package Diagram
Figure 1. 32-pin (300-Mil) Molded SOJ (51-85041)
All product and company names mentioned in this document are the trademarks of their respective holders.
PIN 1 I.D
0.330
0.292 0.340
0.305
0.128
0.140
0.810
0.830
0.260
0.275
0.026
0.014
0.032
0.020
DIMENSIONS IN INCHES MIN.
MAX.
0.025
0.006
0.012
0.050
TYP.
MIN.
*
*
*
LEAD COPLANARITY 0.004 MAX.
51-85041-*A
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CY7C1018DV33
Document #: 38-05465 Rev. *D Page 9 of 9
Document History Page
Document Title: CY7C1018DV33, 1-Mbit (128K x 8) Static RAM
Document Number: 38-05465
REV. ECN NO. Issue Date Orig. of
Change Description of Change
** 201560 See ECN SWI Advance Information data sheet for C9 IPP
*A 238471 See ECN RKF DC parameters modified as per EROS (Spec # 01-02165)
Pb-free Offering in the Ordering Information
*B 262950 See ECN RKF Added Data Retention Characteristics table
Added Tpower Spec in Switching Characteristics table
Shaded Ordering Information
*C 307598 See ECN RKF Reduced Speed bins to -8 and -10 ns
*D 520647 See ECN VKN Converted from Preliminary to Final
Removed Commercial Operating range
Removed 8 ns speed bin
Added ICC values for the frequencies 83MHz, 66MHz and 40MHz
Updated Thermal Resistance table
Updated Ordering Information Table
Changed Overshoot spec from VCC+2V to VCC+1V in footnote #2
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