NXP Semiconductors BGA6489 Manuale operativo

1. Product proﬁle

1.1 General description

The BGA6489 is a silicon Monolithic Microwave Integrated Circuit (MMIC) wideband

medium power ampliﬁer with internal matching circuit in a 3-pin SOT89 plastic, low

thermal resistance, SMD package.

The BGA6x89 series of medium power gain blocks are resistive feedback Darlington

conﬁgured ampliﬁers. Resistive feedback provides large bandwidth with high accuracy.

1.2 Features

nBroadband 50 Ωgain block

n20 dBm output power

nSOT89 package

nSingle supply voltage needed

1.3 Applications

nBroadband medium power gain blocks

nSmall signal high linearity ampliﬁers

nVariable gain and high output power in combination with the BGA2031

nCellular, PCS and CDPD

nIF/RF buffer ampliﬁer

nWireless data SONET

nOscillator ampliﬁer, ﬁnal PA

nDrivers for CATV ampliﬁer

BGA6489

MMIC wideband medium power ampliﬁer

Rev. 02 — 15 June 2009 Product data sheet

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

Product data sheet Rev. 02 — 15 June 2009 2 of 13

NXP Semiconductors BGA6489

MMIC wideband medium power ampliﬁer

1.4 Quick reference data

2. Pinning information

3. Ordering information

4. Marking

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VDDC device voltage on pin 1; IS= 78 mA - 5.1 - V

ISDC supply current VS= 8 V; R1 = 39 Ω;

Tj=25°C-78-mA

|s21|2insertion power gain f = 1950 MHz - 16 - dB

NF noise ﬁgure f = 1950 MHz - 3.3 - dB

PL1dB load power at 1 dB

gain compression f = 850 MHz - 20 - dBm

f = 1950 MHz - 17 - dBm

Table 2. Pinning

Pin Description Simpliﬁed outline Graphic symbol

1 RF_OUT/BIAS

2 GND

3 RF_IN

321

sym130

Table 3. Ordering information

Type number Package

Name Description Version

BGA6489 SC-62 plastic surface-mounted package; collector pad for

good heat transfer; 3 leads SOT89

Table 4. Marking codes

Type number Marking code

BGA6489 4A

Product data sheet Rev. 02 — 15 June 2009 3 of 13

NXP Semiconductors BGA6489

MMIC wideband medium power ampliﬁer

5. Limiting values

[1] Tsp is the temperature at the solder point of the ground lead, pin 2.

6. Thermal characteristics

[1] Tsp is the temperature at the solder point of the ground lead, pin 2.

7. Characteristics

[1] VS= DC operating supply voltage applied to Rbias; see Figure 10

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VDDC device voltage on pin 1; RF input AC coupled - 6 V

ISDC supply current - 150 mA

Ptot total power dissipation Tsp ≤70 °C[1] - 800 mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature - 150 °C

PDmaximum drive power - 15 dBm

Table 6. Thermal characteristics

Symbol Parameter Conditions Typ Unit

Rth(j-sp) thermal resistance from junction to solder point Tsp ≤70 °C[1] 100 K/W

Table 7. Static characteristics

= 8 V; T

= 25

C; R

bias

=39

Ω

[1]

Symbol Parameter Conditions Min Typ Max Unit

VDDC device voltage on pin 1; IS=78mA - 5.1 - V

ISsupply current 70 78 86 mA

Table 8. Characteristics

=8V;I

= 78 mA; T

amb

=25

C; IP3

(out)

tone spacing = 1 MHz; P

= 0 dB per tone, R

bias

=39

Ω

;

=50

Ω

; unless otherwise speciﬁed; see Figure 10.

Symbol Parameter Conditions Min Typ Max Unit

|s21|2Insertion power gain f = 850 MHz - 20 - dB

f = 1950 MHz - 16 - dB

f = 2500 MHz - 15 - dB

RLIN return losses input f = 850 MHz - 14 - dB

f = 1950 MHz - 16 - dB

f = 2500 MHz - 19 - dB

RLOUT return losses output f = 850 MHz - 16 - dB

f = 1950 MHz - 12 - dB

f = 2500 MHz - 10 - dB

Product data sheet Rev. 02 — 15 June 2009 4 of 13

NXP Semiconductors BGA6489

MMIC wideband medium power ampliﬁer

NF noise ﬁgure f = 850 MHz - 3.1 - dB

f = 1950 MHz - 3.3 - dB

f = 2500 MHz - 3.4 - dB

K stability factor f = 850 MHz - 1.2 -

f = 2500 MHz - 1.3 -

PL1dB load power at 1 dB gain compression f = 850 MHz - 20 - dBm

f = 1950 MHz - 17 - dBm

IP3(in) input intercept point f = 850 MHz - 13 - dBm

f = 2500 MHz - 12 - dBm

IP3(out) output intercept point f = 850 MHz - 33 - dBm

f = 2500 MHz - 27 - dBm

IS= 78 mA; VS= 8 V; PD= −30 dBm; ZO= 50 Ω.

Fig 1. Input reﬂection coefﬁcient (s11); typical values

Table 8. Characteristics

…continued

=8V;I

= 78 mA; T

amb

=25

C; IP3

(out)

tone spacing = 1 MHz; P

= 0 dB per tone, R

bias

=39

Ω

;

=50

Ω

; unless otherwise speciﬁed; see Figure 10.

Symbol Parameter Conditions Min Typ Max Unit

mgx400

90°

−90°

0.50.2

+0.2

−5

−2

−0.2

+0.5

−0.5

−1

210 0

0.2

0.6

0.4

0.8

1.0

−45°−135°

45°135°

180°0°

2.6 GHz

200 MHz

Product data sheet Rev. 02 — 15 June 2009 5 of 13

NXP Semiconductors BGA6489

MMIC wideband medium power ampliﬁer

IS= 78 mA; VS= 8 V; PD= −30 dBm; ZO= 50 Ω.

Fig 2. Output reﬂection coefﬁcient (s22); typical values

mgx401

90°

−90°

0.50.2

+0.2

−5

−2

−0.2

+0.5

−0.5

−1

110 0

0.2

0.6

0.4

0.8

1.0

−45°−135°

45°135°

180°0°

2.6 GHz

200 MHz

IS= 78 mA; VS= 8 V; PD= −30 dBm; ZO= 50 Ω.I

S= 78 mA; VS= 8 V; PD= −30 dBm; ZO= 50 Ω.

Fig 3. Insertion power gain (|s21|2) as a function of

frequency; typical values Fig 4. Isolation (|s12|2) as a function of frequency;

typical values

mgx403

0 1500500 2000 2500

f (MHz)

1000

|s21|2

(dB)

0 1500500 2000 2500

f (MHz)

1000

mgx402

−10

−30

−40

−20

|s12|2

(dB)

Product data sheet Rev. 02 — 15 June 2009 6 of 13

NXP Semiconductors BGA6489

MMIC wideband medium power ampliﬁer

IS= 78 mA; VS= 8 V; ZO= 50 Ω.I

S= 78 mA; VS= 8 V; ZO= 50 Ω.

Fig 5. Load power as a function of frequency; typical

values Fig 6. Output intercept as a function of frequency;

typical values

PL1dB

(dBm)

0 1500500 2000 2500

f (MHz)

1000

mgx404 mgx405

IP3(out)

(dBm)

0 1500500 2000 2500

f (MHz)

1000

IS= 78 mA; VS= 8 V; ZO= 50 Ω.I

S= 78 mA; VS= 8 V; ZO= 50 Ω.

Fig 7. Stability factor as a function of frequency;

typical values Fig 8. Noise ﬁgure as a function of frequency; typical

values

0 1500500 2000 2500

f (MHz)

1000

mgx407

(dB)

mgx406

0 1500500 2000 2500

f (MHz)

1000

Product data sheet Rev. 02 — 15 June 2009 7 of 13

NXP Semiconductors BGA6489

MMIC wideband medium power ampliﬁer

8. Application information

Figure 10 shows a typical application circuit for the BGA6489 MMIC. The device is

internally matched to 50 Ωand therefore does not require any external matching. The

value of the input and output DC blocking capacitors C1 and C2 depends on the operating

frequency; see Table 9. Capacitors C1 and C2 are used in conjunction with L1 and C3 to

ﬁne tune the input and output impedance. Capacitor C4 is a supply decoupling capacitor.

A1µF capacitor (C5) can be added for optimum supply decoupling. The external

components should be placed as close as possible to the MMIC. When using via holes,

use multiple via holes per pin in order to limit ground path induction. Resistor R1 is a bias

resistor providing DC current stability with temperature.

VS= 8 V; Rbias =39Ω.

Fig 9. Supply current as function of operating junction temperature; typical values

(mA)

−40 40−20 0 60 80

Tj(°C)

100

mgx408

(1) Optional capacitor for optimum supply decoupling.

(2) R1 values at operating supply voltage:

VS= 6 V; R1 = 27 Ω.

VS= 8 V; R1 = 39 Ω.

VS= 11 V; R1 = 82 Ω.

Fig 10. Typical application circuit

50 Ω

microstrip C1 C2

50 Ω

microstrip

C4 C5(1)

R1(2)

mgx419

1VD

Product data sheet Rev. 02 — 15 June 2009 8 of 13

NXP Semiconductors BGA6489

MMIC wideband medium power ampliﬁer

[1] Optional.

8.1 Scattering parameters

Table 9. List of components

See Figure 10 for circuit.

Component Description Package Value at operating frequency

500 MHz 800 MHz 1950 MHz 2400 MHz 3500 MHz

C1, C2 multilayer ceramic chip capacitor 0603 220 pF 100 pF 68 pF 56 pF 39 pF

C3 multilayer ceramic chip capacitor 0603 100 pF 68 pF 22 pF 22 pF 15 pF

C4 multilayer ceramic chip capacitor 0603 1 nF 1 nF 1 nF 1 nF 1 nF

C5[1] electrolytic or tantalum capacitor 0603 1 µF1µF1µF1µF1µF

L1 SMD inductor 0603 68 nH 33 nH 22 nH 18 nH 15 nH

R1 SMD resistor 0.5 W; VS= 8 V - 39 Ω39 Ω39 Ω39 Ω39 Ω

Table 10. Scattering parameters

= 78 mA; V

=8V;P

−

30 dBm; Z

=50

Ω

; T

amb

=25

f (MHz) s11 s21 s12 s22 K

Magnitude

(ratio) Angle

(degree) Magnitude

(ratio) Angle

(degree) Magnitude

(ratio) Angle

(degree) Magnitude

(ratio) Angle

(degree)

200 0.06 28.11 12.79 164.42 0.06 −0.30 0.12 −22.91 1.1

300 0.09 27.41 12.59 156.85 0.06 −0.39 0.13 −35.38 1.1

400 0.11 21.64 12.31 149.28 0.06 −0.35 0.14 −46.54 1.1

500 0.12 15.28 11.97 141.88 0.06 −0.32 0.14 −57.20 1.1

600 0.14 8.01 11.57 134.79 0.06 0.04 0.15 −61.41 1.1

700 0.16 0.34 11.18 127.97 0.06 0.63 0.16 −76.76 1.1

800 0.17 −7.27 10.75 121.56 0.05 1.57 0.16 −85.75 1.2

900 0.18 −14.78 10.24 115.06 0.05 1.85 0.17 −94.28 1.2

1000 0.19 −22.18 9.80 109.18 0.05 3.16 0.17 −102.4 1.2

1100 0.20 −29.33 9.40 103.40 0.05 4.29 0.17 −110.3 1.2

1200 0.21 −36.41 8.96 98.12 0.05 5.64 0.17 −118.5 1.2

1300 0.21 −42.47 8.53 92.76 0.05 7.03 0.17 −126.7 1.2

1400 0.22 −49.06 8.16 87.50 0.06 7.74 0.17 −134.8 1.2

1500 0.22 −55.46 7.85 82.76 0.06 9.08 0.17 −143.5 1.3

1600 0.22 −61.20 7.51 78.52 0.06 10.76 0.16 −152.7 1.3

1700 0.22 −67.02 7.16 74.16 0.06 11.89 0.16 −161.8 1.3

1800 0.21 −73.40 6.90 69.37 0.06 12.34 0.16 −171.9 1.3

1900 0.21 −78.99 6.69 65.14 0.06 13.16 0.16 177.4 1.3

2000 0.20 −84.54 6.42 61.15 0.06 14.33 0.16 166.81 1.3

2100 0.19 −91.32 6.16 56.80 0.07 14.84 0.17 156.07 1.3

2200 0.18 −97.58 5.99 52.55 0.07 15.05 0.17 145.29 1.3

2300 0.17 −103.60 5.83 49.08 0.07 15.72 0.19 135.65 1.3

2400 0.16 −111.90 5.58 45.43 0.07 15.96 0.20 126.23 1.3

2500 0.14 −120.80 5.39 40.67 0.08 15.27 0.22 117.16 1.3

2600 0.13 −129.80 5.30 36.66 0.08 14.68 0.24 110.35 1.3

Product data sheet Rev. 02 — 15 June 2009 9 of 13

NXP Semiconductors BGA6489

MMIC wideband medium power ampliﬁer

2700 0.13 −143.80 5.18 33.88 0.08 15.64 0.28 104.05 1.3

2800 0.12 −154.47 5.08 30.28 0.08 15.56 0.31 97.10 1.3

2900 0.11 −164.40 4.71 22.43 0.09 11.60 0.28 91.75 1.3

3000 0.11 178.65 4.66 18.90 0.09 11.05 0.31 84.80 1.3

3100 0.12 160.01 4.45 18.63 0.10 10.63 0.33 80.37 1.3

Table 10. Scattering parameters

= 78 mA; V

=8V;P

−

30 dBm; Z

=50

Ω

; T

amb

=25

f (MHz) s11 s21 s12 s22 K

Magnitude

(ratio) Angle

(degree) Magnitude

(ratio) Angle

(degree) Magnitude

(ratio) Angle

(degree) Magnitude

(ratio) Angle

(degree)

Product data sheet Rev. 02 — 15 June 2009 10 of 13

NXP Semiconductors BGA6489

MMIC wideband medium power ampliﬁer

9. Package outline

Fig 11. Package outline SOT89 (SC-62)

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

DIMENSIONS (mm are the original dimensions)

SOT89 TO-243 SC-62 06-03-16

06-08-29

EHE

0 2 4 mm

scale

bp3

bp2

bp1

Plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT89

123

UNIT A

mm 1.6

1.4 0.48

0.35

0.44

0.23

4.6

4.4

2.6

2.4

HELp

4.25

3.75

3.0

0.13

1.5 1.2

0.8

bp2

bp1

0.53

0.40

bp3

1.8

1.4

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