Panasonic Multi Chip Discrete UP05C8G Manuale utente
Multi Chip Discrete
Publication date: November 2005 SJJ00348AED 1
UP05C8G
Silicon NPN epitaxial planar type (Tr)
Silicon epitaxial planar type (CCD load device)
For CCD output circuits
Features
Two elements incorporated into one package (Tr + CCD load device)
Costs can be reduced through downsizing of the equipment and reduction of
the number of parts.
Basic Part Number
2SC3932 +CCD load device
Absolute Maximum Ratings Ta= 25°C
Parameter Symbol Rating Unit
Tr
Collector-base voltage
(Emitter open) VCBO 30 V
Collector-emitter voltage
(Base open) VCEO 20 V
Emitter-base voltage
(Collector open) VEBO 3 V
Collector current IC50 mA
CCD
load
device
Limiting element voltage Vmax 40 V
Limiting element current Imax 10 mA
Overall
Total power dissipation *PT125 mW
Junction temperature Tj125 °C
Storage temperature Tstg –55 to +125 °C
Note) *: Measuring on substrate at 17 mm ×10 mm ×1 mm
Marking Symbol: 4V
Internal Connection
3
(G)
(S)
4
1
(E) 2
(B)
(C)
6(D)
5
Tr FET
Unit: mm
1: Emitter 4: Source
2: Base 5: Drain
3: Gate 6: Collector
SSMini6-F1 Package
(0.30) 0.10±0.02
6 5 4
1 2 3 5°
5°
0.20+0.05
–0.02
1.60±0.050.55±0.05
0.10 max.
0 to 0.02
(0.20)
1.60±0.05
1番ピン端子表示
1.20±0.05
(0.20)
1.00±0.05
(0.50)(0.50)
UP05C8G
2SJJ00348AED
Electrical Characteristics Ta= 25°C±3°C
Tr
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC= 100 mA, IE= 0 30 V
Emitter-base voltage (Collector open) VEBO IE= 10 mA, IC= 0 3 V
Base-emitter voltage VBE VCE = 10 V, IC= 2 mA 720 mV
Forward current transfer ratio hFE VCE = 10 V, IC= 2 mA 25 250
Transition frequency *fTVCB = 10 V, IE= -15 mA, f = 200 MHz 800 1
200 MHz
Power gain GPVCB = 10 V, IE= -1 mA, f = 100 MHz 20 dB
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
*: Pulse measurement
CCD Load Device
Parameter Symbol Conditions Min Typ Max Unit
Pinchi off current IPVDS = 10 V, VG= 0 3.5 5.5 mA
Output impedance ZOVDS = 10 V, VG= 0 0.05 MW
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
PTTa
Common characteristics chart
0 40 80 120
0
140
120
100
80
40
20
60
Total power dissipation PT(mW)
Ambient temperature Ta(°C)
UN05C8B_PT-Ta
ICVCE ICIBIBVBE
Characteristics charts of Tr
0 42 8 106 12
0
35
30
25
40
5
20
15
10
Collector current IC(mA)
Collector-emitter voltage VCE (V)
UP05C8G_IC-VCE
Ta=25°C
IB=300 µA
200 µA
150 µA
100 µA
50 µA
250 µA
0 0.4 0.60.2 1.00.8 1.2
0
50
40
60
10
30
20
Collector current IC(mA)
Base current IB(mA)
UP05C8G_IC-IB
VCE =10 V
0.40.20.1 0.3 0.5 0.6 0.7 0.8 0.9
0
0
0.7
0.6
0.8
0.2
0.1
0.3
0.5
0.4
Base current IB(mA)
Base-emitter voltage VBE (V)
UP05C8G_IB-VBE
VCE =10 V
Ta=25°C
UP05C8G
SJJ00348AED 3
ICVBE VCE(sat) IChFE IC
Cob VCB
0 0.4 0.60.2 1.20.8 1.0 1.4
0
40
50
10
20
30
Collector current IC(mA)
Base-emitter voltage VBE (V)
UP05C8G_IC-VBE
VCE =10 V
Ta=85°C
−25°C
25°C
0 2515 20105 30 35
100
1
10
0.1
UP05C8B_
Cob
-
VCB
Ta= 25°C
f = 1 MHz
Collector-base voltage VCB (V)
Collector output capacitance
(Common base, input open circuited) Cob (pF)
0.1 1 10 100
0.1
1
0.01
UP05C8G_
VCE(sat)
-
IC
Collector-emitter saturation voltage VCE(sat) (V)
Collector current IC(mA)
IC/ IB= 10
Ta= 85°C
25°C
−25°C
1 10 100
50
300
200
250
150
100
350
0
UP05C8G_
hFE
-
IC
Forward current transfer ratio hFE
Collector current IC(mA)
Ta= 85°C
−25°C
25°C
VCE = 10 V
IPVDS
Characteristics charts of CCD load device
0 42 14106 8 12 16
0
3.5
4.0
3.0
4.5
0.5
1.0
2.0
2.5
1.5
Peak current IP(mA)
Drain-source voltage VDS (V)
UP05C8G_IP-VDS
VG=0
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2)The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3)The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
–Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
–Any applications other than the standard applications intended.
(4)The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5)When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6)Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7)This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
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