Toshiba TPC8402 Manuale utente

TPC8402

2006-11-13

TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (π−MOSVI/U−MOSII)

TPC8402

Lithium-Ion Secondary Battery Applications

Notebook PCs

Portable Equipment Applications

zLow drain−source ON resistance : P Channel RDS (ON) = 27 mΩ(typ.)

N Channel RDS (ON) = 37 mΩ(typ.)

zHigh forward transfer admittance : P Channel |Yfs| = 7 S (typ.)

N Channel |Yfs| = 6 S (typ.)

zLow leakage current : P Channel IDSS = −10 µA (VDS = −30 V)

N Channel IDSS = 10 µA (VDS = 30 V)

zEnhancement−mode

: P Channel Vth = −0.8~ −2.0 V (VDS = −10 V, ID= −1mA)

N Channel Vth = 0.8~2.0 V (VDS = 10 V, ID= 1mA)

Absolute Maximum Ratings (Ta = 25°C)

Rating

Characteristics Symbol P Channel N Channel Unit

Drain-source voltage VDSS −30 30 V

Drain-gate voltage (RGS =20 kΩ) VDGR −30 30 V

Gate-source voltage VGSS ±20 ±20 V

DC (Note 1) ID−4.5 5

Drain current

Pulse (Note 1) IDP −18 20

Single-device operation

(Note 3a)

PD (1) 1.5 1.5

Drain power

dissipation

(t = 10s)

(Note 2a)

Single-device value at

dual operation (Note 3b) PD (2) 1.0 1.0

Single-device operation

(Note 3a)

PD (1) 0.75 0.75

Drain power

dissipation

(t = 10s)

(Note 2b)

Single-device value at

dual operation (Note 3b) PD (2) 0.45 0.45

Single-pulse avalanche energy EAS 26.3

(Note 4a)

32.5

(Note 4b) mJ

Avalanche current IAR −4.5 5 A

Repetitive avalanche energy

Single-device value at operation

(Note 2a, Note 3b, Note 5)

EAR 0.10 mJ

Channel temperature Tch 150 °C

Storage temperature range Tstg −55~150 °C

Note: For Notes 1 to 5, see the next page.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

This transistor is an electrostatic-sensitive device. Handle with care.

Unit: mm

JEDEC ―

JEITA ―

TOSHIBA 2-6J1E

Weight: 0.080 g (typ.)

Circuit Configuration

TPC8402

2006-11-13

Thermal Characteristics

Characteristics Symbol Max. Unit

Single-device operation

(Note 3a) Rth (ch-a) (1) 83.3

Thermal resistance, channel to ambient

(t = 10s) (Note 2a) Single-device value at

dual operation

(Note 3b)

Rth (ch-a) (2) 125

Single-device operation

(Note 3a) Rth (ch-a) (1) 167

Thermal resistance, channel to ambient

(t = 10s) (Note 2b) Single-device value at

dual operation

(Note 3b)

Rth (ch-a) (2) 278

°C/W

Marking

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2:

a) Device mounted on a glass-epoxy board (a) b) Device mounted on a glass-epoxy board (b)

Note 3:

a) The power dissipation and thermal resistance values shown are for a single device.

(During single-device operation, power is applied to one device only.)

b) The power dissipation and thermal resistance values shown are for a single device.

(During dual operation, power is applied to both devices evenly.)

Note 4:

a) VDD = −24 V, Tch = 25°C (Initial), L = 1.0 mH, RG= 25 Ω, IAR = −4.5 A

b) VDD = 24 V, Tch = 25°C (Initial), L = 1.0 mH, RG= 25 Ω, IAR = 5.0 A

Note 5: Repetitive rating: pulse width limited by maximum channel temperature

Note 6: •on lower left of the marking indicates Pin 1.

FR-4

25.4 × 25.4 × 0.8

(unit: mm)

(a)

FR-4

25.4 × 25.4 × 0.8

(unit: mm)

(b)

* Weekly code: (Three digits)

Week of manufacture

(from “01” for first week of the year, continuing up to “52” or “53”)

Year of manufacture

(the last digit of the calendar year)

TPC8402

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

Part No. (or abbreviation code)

TPC8402

2006-11-13

P-ch

Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min. Typ. Max. Unit

Gate leakage current IGSS VGS = ±16 V, VDS = 0 V — — ±10 µA

Drain cut−off current IDSS VDS = −30 V, VGS = 0 V — — −10 µA

V(BR) DSS ID= −10 mA, VGS = 0 V −30 — —

Drain−source breakdown voltage

V(BR) DSX I

D= −10 mA, VGS = 20 V −15 — —

Gate threshold voltage Vth VDS = −10 V, ID= −1 mA −0.8 — −2.0 V

RDS (ON) VGS = −4 V, ID= −2.2 A — 55 65

Drain−source ON resistance

RDS (ON) VGS = −10 V, ID= −2.2 A — 27 35

mΩ

Forward transfer admittance |Yfs| VDS = −10 V, ID= −2.2 A 3.5 7 — S

Input capacitance Ciss — 970 —

Reverse transfer capacitance Crss — 180 —

Output capacitance Coss

VDS = −10 V, VGS = 0 V, f = 1 MHz

— 370 —

Rise time tr— 17 —

Turn−on time ton — 20 —

Fall time tf— 75 —

Switching time

Turn−off time toff — 160 —

Total gate charge (gate−source

plus gate−drain) Qg— 28 —

Gate−source charge 1 Qgs1 — 6 —

Gate−drain (“miller”) charge Qgd

VDD ≈−24 V, VGS = −10 V, ID= −4.5 A

— 12 —

Source−Drain Ratings and Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min. Typ. Max. Unit

Drain reverse

current Pulse (Note 1) IDRP — — — −18 A

Forward voltage (diode) VDSF IDR = −4.5 A, VGS = 0 V — — 1.2 V

TPC8402

2006-11-13

N-ch

Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min. Typ. Max. Unit

Gate leakage current IGSS VGS = ±16 V, VDS = 0 V — — ±10 µA

Drain cut−off current IDSS VDS = 30 V, VGS = 0 V ――10 µA

Drain−source breakdown

voltage V(BR) DSS ID= 10 mA, VGS = 0 V 30 ――V

Gate threshold voltage Vth VDS = 10 V, ID= 1 mA 0.8 ―2.0 V

RDS (ON) VGS = 4 V, ID= 2.5 A ―58 80 mΩ

Drain−source ON resistance

RDS (ON) VGS = 10 V, ID= 2.5 A ―37 50 mΩ

Forward transfer admittance |Yfs| VDS = 10 V, ID= 2.5 A 3 6 ―S

Input capacitance Ciss ―475 ―

Reverse transfer capacitance Crss ―85 ―

Output capacitance Coss

VDS = 10 V, VGS = 0 V, f = 1 MHz

―270 ―

Rise time tr―10 ―

Turn−on time ton ―16 ―

Fall time tf―13 ―

Switching time

Turn−off time toff ―70 ―

Total gate charge (gate−source

plus gate−drain) Qg―16 ―

Gate−source charge 1 Qgs1 ―11 ―

Gate−drain (“miller”) charge Qgd

VDD ≈24 V, VGS = 10 V, ID= 5 A

―5 ―

Source−Drain Ratings and Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min. Typ. Max. Unit

Drain reverse

current Pulse (Note 1) IDRP — — — 20 A

Forward voltage (diode) VDSF IDR = 6 A, VGS = 0 V — — −1.2 V

TPC8402

2006-11-13

P-ch

Drain current ID(A)

RDS (ON) – ID

Drain−source voltage

RDS (ON) (mΩ)

VGS =−4 V

VGS =−10 V

−0.1 −1−100

100

−10−0.3 −3−30

300

500

Common source

Ta =25°C

Pulse test

TPC8402

2006-11-13

P-ch

DRAIN POWER DISSIPATION PD(W)

AMBIENT TEMPERATURE Ta (°C)

PD– Ta

(1)

(2)

0 50 100 150 200

0.5

1.0

1.5

2.0

(4)

(3)

DEVICE MOUNTED ON A GLASS-EPOXY BOARD (a)

(NOTE 2a)

(1) SINGLE-DEVICE OPERATION (NOTE 3a)

(2) SINGLE-DEVICE VALUE AT DUAL OPERATION

(NOTE 3b)

DEVICE MOUNTED ON A GLASS-EPOXY

BOARD (b) (NOTE 2b)

(3) SINGLE-DEVICE OPERATION

(NOTE 3a)

(4) SINGLE-DEVICE VALUE AT DUAL

OPERATION (NOTE3b)

t= 10 s

Ambient temperature Ta (°C)

RDS (ON) – Ta

Drain−source ON resistance

RDS (ON) (mΩ)

−80 −40 0 40 80 160120

Common source

Pulse test

−2.2 A

ID=−4.5 A

−1.3 A

ID=−4.5 A, −2.2 A

−10 V −1.3 A

VGS =−4 V

TPC8402

2006-11-13

P-ch

rth −tw

PULSE WIDTH tw(s)

TRANSIENT THERMAL IMPEDANCE

rth (°C/W)

0.1

0.001 0.01 0.1 1 10 100 1000

0.3

0.5

100

300

1000

500

DEVICE MOUNTED ON A GLASS-EPOXY BOARD (a) (NOTE 2a)

(1) SINGLE-DEVICE OPERATION (NOTE 3a)

(2) SINGLE-DEVICE VALUE AT DUAL OPERATION (NOTE 3b)

DEVICE MOUNTED ON A GLASS-EPOXY BOARD (b) (NOTE 2b)

(3) SINGLE-DEVICE OPERATION (NOTE 3a)

(4) SINGLE-DEVICE VALUE AT DUAL OPERATION (NOTE 3b) (1)

SINGLE PULSE

(2)

(3)

(4)

TPC8402

2006-11-13

N-ch

TPC8402

2006-11-13

N-ch

DRAIN POWER DISSIPATION PD(W)

AMBIENT TEMPERATURE Ta (°C)

PD– Ta

(1)

(2)

0 50 100 150 200

0.5

1.0

1.5

2.0

(4)

(3)

DEVICE MOUNTED ON A GLASS-EPOXY BOARD (a)

(NOTE 2a)

(1) SINGLE-DEVICE OPERATION (NOTE 3a)

(2) SINGLE-DEVICE VALUE AT DUAL OPERATION

(NOTE 3b)

DEVICE MOUNTED ON A GLASS-EPOXY

BOARD (b) (NOTE 2b)

(3) SINGLE-DEVICE OPERATION

(NOTE 3a)

(4) SINGLE-DEVICE VALUE AT DUAL

OPERATION (NOTE3b)

t= 10 s

TPC8402

2006-11-13

N-ch

rth −tw

PULSE WIDTH tw(s)

TRANSIENT THERMAL IMPEDANCE

rth (°C/W)

0.1

0.001 0.01 0.1 1 10 100 1000

0.3

0.5

100

300

1000

500

DEVICE MOUNTED ON A GLASS-EPOXY BOARD (a) (NOTE 2a)

(1) SINGLE-DEVICE OPERATION (NOTE 3a)

(2) SINGLE-DEVICE VALUE AT DUAL OPERATION (NOTE 3b)

DEVICE MOUNTED ON A GLASS-EPOXY BOARD (b) (NOTE 2b)

(3) SINGLE-DEVICE OPERATION (NOTE 3a)

(4) SINGLE-DEVICE VALUE AT DUAL OPERATION (NOTE 3b) (1)

SINGLE PULSE

(2)

(3)

(4)

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