Transcend Mobile Memory Card TS1GRMMC4 Manuale utente
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Description
TS64MRMMC4 ~ TS1GRMMC4 is a 64MB ~ 1GB
MMCmobile memory card. It’s a fastest, low-power,
highly integration memory card. TS64MRMMC4 ~
TS1GRMMC4 is designed to provide an inexpensive,
mechanically robust storage medium in card form for
multimedia consumer applications and mobile
devices (handheld PCs, digital cameras, MP3
players, etc.) to store, copy, and move data at
high-speed transfer rate.
Placement
Features
•Storage Capacity: 64MB ~ 1GB
•Support Dual Operating Voltage: 2.7~3.6V/1.65~1.95V
•Support clock frequencies: 0~52MHz
•Support different Bus width: x1, x4, x8
•Operating Temperature: -25°C ~ 85°C
•Data access mode: Byte mode
•Fully compatible with MultiMediaCard system
specification version 4.0 and backwards compatibility
with previous specification
•Form Factor: 18mm x 24mm x 1.4mm
Front Back
Pin Definition
MMC Mode SPI Mode
Pin No. Name Type Description Name Type Description
1 DAT3 I/O/PP Data CS I Chip select
2 CMD I/O/PP/OD Command/Response DI I/PP Data in
3 VSS1 S Ground VSS S Ground
4 VDD S Power supply VDD S Power supply
5 CLK I Clock SCLK I Clock
6 VSS2 S Ground VSS2 S Ground
7 DAT0 I/O/PP Data DO O/PP Data out
8 DAT1 I/O/PP Data Not used
9 DAT2 I/O/PP Data Not used
10 DAT4 I/O/PP Data Not used
11 DAT5 I/O/PP Data Not used
12 DAT6 I/O/PP Data Not used
13 DAT7 I/O/PP Data Not used
S: Power Supply; I:Input; O:Output; PP:Push-Pull; OD:Open-Drain; NC:Not Connected
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MultiMediaCard Architecture
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Temperature Characteristics
Parameter Min. Max. Unit
Operating temperature -25 85 ℃
Electrical Characteristics
• Absolute Maximum Ratings
Parameter Symbol Rating Unit
Power Supply Voltage VCC -0.6~+4.6 V
Input Voltage VIN -0.6~+4.6 V
Input/Output Voltage VI/O -0.6~+4.6 V
• Recommended Operation Conditions
Parameter Symbol Min. Typ. Max. Unit
Power Supply Voltage (High Voltage Range) VDDH 2.7 3.3 3.6 V
Power Supply Voltage (Low Voltage Range) VDDL 1.65 1.8 1.95 V
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DC Characteristics
• High Voltage Power Supply (Ta=-25℃to 85℃,VDDH=2.7V to3.6V)
Parameter Symbol Min. Typ. Max. Unit Condition
Output Low Voltage (OD) VODOL 0.3 V IOL =2mA
Output High Voltage (PP) VOH 0.75* VDDH V IOH =-100uA
Output Low Voltage (PP) VOL 0.125* VDDH V IOL =100uA
Input High Voltage VIH 0.625* VDDH VDDH +0.3 V
Input Low Voltage VIL -0.3 0.25* VDDH V
Operating Current ICC 20(TBD) mA IVCCF =0mA
Stand-by Current ISB 400(TBD) uA
Input Leakage Current ILI -10/+10 uA VIN =0 to VDDH
Output Leakage Current ILO -10/+10 uA VOUT =0 to VDDH
Pin Capacitance CP7 pF
Power Output Voltage VF1.50 1.8 1.95 V IF＜＝240mA
• Low Voltage Power Supply (Ta=-25℃to 85℃,VDDL=1.65V to 1.95V)
Parameter Symbol Min. Typ. Max. Unit Condition
Output High Voltage VOH VDDL -0.2 V IOH =-100uA
Output Low Voltage VOL 0.2 V IOL =100uA
Input High Voltage VIH 0.7* VDDL VDDL +0.3 V
Input Low Voltage VIL -0.3 0.3* VDDL V
Operating Current ICC 20(TBD) mA IVCCF =0mA
Stand-by Current ISB 400(TBD) uA
Input Leakage Current ILI -10/+10 uA VIN =0 to VDDL
Output Leakage Current ILO -10/+10 uA VOUT =0 to VDDL
Pin Capacitance CP7 pF
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AC Characteristics
• High Speed Card Interface Timing (Ta=-25℃to 85℃,VDDH=2.7V to3.6V)
Parameter Symbol Min. Max. Unit Notes
Clock Frequency (Data Transfer Mode) fpp 26 52 MHz
Clock Frequency (Identification Mode) fOD 0 400 KHz
Clock Low Time tWL 6.5 ns
Clock Rise Time tTLH 3 ns
Clock Fall Time tTHL 3 ns
Input Set-up Time tISU 3 ns
Input Hold Time tIH 3 ns
Output Delay Time tDLY 5 14 ns
CL＜＝30pF
Signal Rise Time trise 3 ns
CL＜＝30pF
Signal Fall Time tfall 3 ns CL＜＝30pF
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• Backwards Compatible Card Interface Timing (Ta=-25℃to 85℃,VDDH=2.7V to3.6V)
Parameter Symbol Min. Max. Unit Notes
Clock Frequency (Data Transfer Mode) fpp 0 20 MHz
Clock Frequency (Identification Mode) fOD 0 400 KHz
Clock Low Time tWL 10 ns
Clock Rise Time tTLH 10 ns
Clock Fall Time tTHL 10 ns
Input Set-up Time tISU 3 ns
Input Hold Time tIH 3 ns
Output Delay Time tDLY 9.7 35 ns
CL＜＝30pF
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• Command Latch Cycle
Parameter Symbol Min. Unit Notes
CLE Setup Time tCLS1 30 ns CL<=80pF
CLE Hold Time tCLH1 15 ns CL<=80pF
CE Setup Time tCS1 40 ns CL<=80pF
CE Hold Time tCH1 90 ns CL<=80pF
ALE Setup Time tALS1 90 ns CL<=80pF
ALE Hold Time tALH1 75 ns CL<=80pF
WE Pulse Width tWP1 45 ns CL<=80pF
Data Setup Time tDS1 90 ns CL<=80pF
Data Hold Time tDH1 30 ns CL<=80pF
• Address Latch Cycle
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Parameter Symbol Min. Unit Remark
CLE Setup Time tCLS2 90 ns CL<=80pF
CE Setup Time tCS2 195 ns CL<=80pF
ALE Setup Time tALS2 30 ns CL<=80pF
ALE Hold Time tALH2 15 ns CL<=80pF
Write Cycle Time tWC2 150 ns CL<=80pF
WE Pulse Width tWP2 45 ns CL<=80pF
WE High Hold Time tWH2 105 ns CL<=80pF
Data Setup Time tDS2 90 ns CL<=80pF
Data Hold Time tDH2 30 ns CL<=80pF
• Input Data Latch Cycle
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Parameter Symbol Min. Unit Remark
CLE Hold Time tCLH3 285 ns CL<=80pF
CE Hold Time tCH3 195 ns CL<=80pF
ALE Setup Time tALS3 90 ns CL<=80pF
Write Cycle Time tWC3 60 ns CL<=80pF
WE Pulse Width tWP3 45 ns CL<=80pF
WE High Hold Time tWH3 15 ns CL<=80pF
Data Setup Time tDS3 30 ns CL<=80pF
Data Hold Time tDH3 30 ns CL<=80pF
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• Serial Access Cycle after Read
Parameter Symbol Min. Unit Remark
CE Access Time tCEA4 285 ns CL<=80pF
Read Cycle Time tRC4 60 ns CL<=80pF
RE Pulse Width tRP4 45 ns CL<=80pF
RE High Hold Time tREH4 15 ns CL<=80pF
Data Setup Time tDS4 5(TBD) ns CL<=80pF
Data Hold Time tDH4 5(TBD) ns CL<=80pF
Ready to RE Low tRR4 285 ns CL<=80pF
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