Cypress Semiconductor CY7C1006D Manuale utente

1-Mbit (256K x 4) Static RAM

CY7C106D

CY7C1006D

Cypress Semiconductor Corporation • 198 Champion Court • San Jose,CA 95134-1709 • 408-943-2600

Document #: 38-05459 Rev. *E Revised February 22, 2007

Features

• Pin- and function-compatible with CY7C106B/CY7C1006B

• High speed

—t

AA =10 ns

• Low active power

—I

CC = 80 mA @ 10 ns

• Low CMOS standby power

—I

SB2 = 3.0 mA

• 2.0V Data Retention

• Automatic power-down when deselected

• CMOS for optimum speed/power

• TTL-compatible inputs and outputs

• CY7C106D available in Pb-free 28-pin 400-Mil wide Molded

SOJ package. CY7C1006D available in Pb-free 28-pin

300-Mil wide Molded SOJ package

Functional Description [1]

The CY7C106D and CY7C1006D are high-performance

CMOS static RAMs organized as 262,144 words by 4 bits.

Easy memory expansion is provided by an active LOW Chip

Enable (CE), an active LOW Output Enable (OE), and tri-state

drivers. These devices have an automatic power-down feature

that reduces power consumption by more than 65% when the

devices are deselected. The four input and output pins (IO0

through IO3) are placed in a high-impedance state when:

• Deselected (CE HIGH)

• Outputs are disabled (OE HIGH)

• When the write operation is active (CE and WE LOW)

Write to the device by taking Chip Enable (CE) and Write

Enable (WE) inputs LOW. Data on the four IO pins (IO0

through IO3) is then written into the location specified on the

address pins (A0through A17).

Read from the device by taking Chip Enable (CE) and Output

Enable (OE) LOW while forcing Write Enable (WE) HIGH.

Under these conditions, the contents of the memory location

specified by the address pins appears on the four IO pins.

Logic Block Diagram

IO0

IO1

IO2

IO3

SENSE AMPS

POWER

DOWN

ROW DECODER

256K x 4

ARRAY

INPUT BUFFER

A10

A11

A12

A13

A14

A15

A16

A17

COLUMN DECODER

Note

1. For guidelines on SRAM system design, please refer to the ‘System Design Guidelines’ Cypress application note, available on the internet at www.cypress.com.

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CY7C106D

CY7C1006D

Document #: 38-05459 Rev. *E Page 2 of 11

Pin Configuration [2]

Selection Guide

CY7C106D-10

CY7C1006D-10 Unit

Maximum Access Time 10 ns

Maximum Operating Current 80 mA

Maximum Standby Current 3 mA

14 15

GND

Top View

SOJ

Note

2. NC pins are not connected on the die.

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CY7C106D

CY7C1006D

Document #: 38-05459 Rev. *E Page 3 of 11

Maximum Ratings

Exceeding the maximum ratings may impair the useful life of

the device. These user guidelines are not tested.

Storage Temperature ................................. –65°C to +150°C

Ambient Temperature with

Power Applied.............................................–55°C to +125°C

Supply Voltage on VCC Relative to GND [3] ... –0.5V to +6.0V

DC Voltage Applied to Outputs

in High-Z State [3] ...................................–0.5V to VCC + 0.5V

DC Input Voltage [3] ............................... –0.5V to VCC + 0.5V

Current into Outputs (LOW) ........................................ 20 mA

Static Discharge Voltage .......................................... > 2001V

(per MIL-STD-883, Method 3015)

Latch-up Current .................................................... > 200 mA

Operating Range

Range Ambient

Temperature VCC Speed

Industrial –40°C to +85°C 5V ±0.5V 10 ns

Electrical Characteristics (Over the Operating Range)

Parameter Description Test Conditions

7C106D-10

7C1006D-10 Unit

Min Max

VOH Output HIGH Voltage IOH = –4.0 mA 2.4 V

VOL Output LOW Voltage IOL = 8.0 mA 0.4 V

VIH Input HIGH Voltage 2.2 VCC + 0.5 V

VIL Input LOW Voltage [3] –0.5 0.8 V

IIX Input Leakage Current GND < VI< VCC –1 +1 µA

IOZ Output Leakage Current GND < VI <VCC, Output Disabled –1 +1 µA

ICC VCC Operating Supply Current VCC = Max,

IOUT = 0 mA,

f = fmax = 1/tRC

100 MHz 80 mA

83 MHz 72 mA

66 MHz 58 mA

40 MHz 37 mA

ISB1 Automatic CE Power-Down

Current—TTL Inputs

Max VCC, CE > VIH,

VIN > VIH or VIN < VIL, f = fmax

10 mA

ISB2 Automatic CE Power-Down

Current—CMOS Inputs

Max VCC, CE > VCC – 0.3V,

VIN > VCC – 0.3V or VIN < 0.3V, f=0

3mA

Note

3. VIL (min) = –2.0V and VIH(max) = VCC + 1V for pulse durations of less than 5 ns.

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CY7C1006D

Document #: 38-05459 Rev. *E Page 4 of 11

Capacitance [4]

Parameter Description Test Conditions Max Unit

CIN: Addresses Input Capacitance TA= 25°C, f = 1 MHz, VCC = 5.0V 7 pF

CIN: Controls 10 pF

COUT Output Capacitance 10 pF

Thermal Resistance [4]

Parameter Description Test Conditions 300-Mil

Wide SOJ

400-Mil

Wide SOJ Unit

ΘJA Thermal Resistance

(Junction to Ambient)

Still Air, soldered on a 3 × 4.5 inch,

four-layer printed circuit board

59.16 58.76 °C/W

ΘJC Thermal Resistance

(Junction to Case)

40.84 40.54 °C/W

AC Test Loads and Waveforms [5]

90%

10%

3.0V

GND

90%

10%

ALL INPUT PULSES

* CAPACITIVE LOAD CONSISTS

OF ALL COMPONENTS OF THE

TEST ENVIRONMENT Rise Time: ≤ 3 ns Fall Time: ≤ 3 ns

30 pF*

OUTPUT

Z = 50

Ω

50 Ω

1.5V

(b)

(a)

OUTPUT

5 pF

(c)

R1 480Ω

255Ω

High-Z characteristics:

INCLUDING

JIG AND

SCOPE

Notes

4. Tested initially and after any design or process changes that may affect these parameters.

5. AC characteristics (except High-Z) are tested using the load conditions shown in Figure (a). High-Z characteristics are tested for all speeds using the test load

shown in Figure (c).

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CY7C1006D

Document #: 38-05459 Rev. *E Page 5 of 11

Switching Characteristics (Over the Operating Range) [6]

Parameter Description

7C106D-10

7C1006D-10 Unit

Min Max

Read Cycle

tpower [7] VCC(typical) to the first access 100 µs

tRC Read Cycle Time 10 ns

tAA Address to Data Valid 10 ns

tOHA Data Hold from Address Change 3 ns

tACE CE LOW to Data Valid 10 ns

tDOE OE LOW to Data Valid 5 ns

tLZOE OE LOW to Low Z 0 ns

tHZOE OE HIGH to High Z [8, 9] 5ns

tLZCE CE LOW to Low Z [9] 3ns

tHZCE CE HIGH to High Z [8, 9] 5ns

tPU [10] CE LOW to Power-Up 0 ns

tPD [10] CE HIGH to Power-Down 10 ns

Write Cycle [11, 12]

tWC Write Cycle Time 10 ns

tSCE CE LOW to Write End 7 ns

tAW Address Set-Up to Write End 7 ns

tHA Address Hold from Write End 0 ns

tSA Address Set-Up to Write Start 0 ns

tPWE WE Pulse Width 7 ns

tSD Data Set-Up to Write End 6 ns

tHD Data Hold from Write End 0 ns

tLZWE WE HIGH to Low Z [9] 3ns

tHZWE WE LOW to High Z [8, 9] 5ns

Notes

6. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified

IOL/IOH and 30-pF load capacitance.

7. tPOWER gives the minimum amount of time that the power supply should be at typical VCC values until the first memory access can be performed.

8. tHZOE, tHZCE, and tHZWE are specified with a load capacitance of 5 pF as in part (c) of “AC Test Loads and Waveforms [5]” on page 4. Transition is measured when the outputs

enter a high impedance state.

9. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device.

10. This parameter is guaranteed by design and is not tested.

11. The internal write time of the memory is defined by the overlap of CE and WE LOW. CE and WE must be LOW to initiate a write, and the transition of either of these signals

can terminate the write. The input data set-up and hold timing should be referenced to the leading edge of the signal that terminates the write.

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CY7C106D

CY7C1006D

Document #: 38-05459 Rev. *E Page 6 of 11

Data Retention Characteristics (Over the Operating Range)

Parameter Description Conditions Min Max Unit

VDR VCC for Data Retention 2.0 V

ICCDR Data Retention Current VCC = VDR = 2.0V, CE > VCC – 0.3V,

VIN > VCC – 0.3V or VIN < 0.3V

3mA

tCDR [4] Chip Deselect to Data Retention Time 0 ns

tR [13, 14] Operation Recovery Time tRC ns

Data Retention Waveform

4.5V4.5V

tCDR

VDR >2V

DATA RETENTION MODE

Switching Waveforms

Read Cycle No.1 (Address Transition Controlled) [15, 16]

Read Cycle No. 2 (OE Controlled) [16, 17]

PREVIOUS DATA VALID DATA VALID

tRC

tAA

tOHA

ADDRESS

DATA OUT

50%

DATA VALID

tRC

tACE

tDOE

tLZOE

tLZCE

tPU

HIGH IMPEDANCE

tHZOE

tHZCE

tPD

IMPEDANCE

ICC

ISB

HIGH

ADDRESS

DATA OUT

VCC

SUPPLY

CURRENT

Notes

13. Full device operation requires linear VCC ramp from VDR to VCC(min) > 50 µs or stable at VCC(min) > 50 µs.

14. tr <3 ns for all speeds.

15. Device is continuously selected, OE and CE = VIL.

16. WE is HIGH for read cycle.

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CY7C1006D

Document #: 38-05459 Rev. *E Page 7 of 11

Write Cycle No. 1 (CE Controlled) [18, 19]

Write Cycle No. 2 (WE Controlled, OE HIGH During Write) [18, 19]

Switching Waveforms (continued)

tWC

DATA VALID

tAW

tSA

tPWE

tHA

tHD

tSD

tSCE

ADDRESS

DATA IO

DATA VALID

tHD

tSD

tPWE

tSA

tHA

tAW

tSCE

tWC

tHZOE

ADDRESS

DATA IO

Notes

18. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high-impedance state.

19. Data IO is high impedance if OE = VIH.

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CY7C1006D

Document #: 38-05459 Rev. *E Page 8 of 11

Write Cycle No. 3 (WE Controlled, OE LOW) [12, 19]

Truth Table

CE OE WE Input/Output Mode Power

H X X High Z Power-Down Standby (ISB)

L L H Data Out Read Active (ICC)

L X L Data In Write Active (ICC)

L H H High Z Selected, Outputs Disabled Active (ICC)

Ordering Information

Speed

(ns) Ordering Code

Package

Diagram Package Type Operating

Range

10 CY7C106D-10VXI 51-85032 28-pin (400-Mil) Molded SOJ (Pb-free) Industrial

CY7C1006D-10VXI 51-85031 28-pin (300-Mil) Molded SOJ (Pb-free)

Please contact your local Cypress sales representative for availability of these parts.

Switching Waveforms (continued)

DATA VALID

tHD

tSD

tLZWE

tPWE

tSA

tHA

tAW

tSCE

tWC

tHZWE

ADDRESS

DATA IO

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CY7C1006D

Document #: 38-05459 Rev. *E Page 9 of 11

Package Diagrams

Figure 1. 28-pin (300-Mil) Molded SOJ, 51-85031

MIN.

MAX.

PIN 1 ID

0.291

0.300

0.050

TYP.

0.007

0.013

0.330

0.350

0.120

0.140

0.025 MIN.

0.262

0.272

0.697

0.713

0.013

0.019 0.014

0.020

0.032

0.026

DETAIL

EXTERNAL LEAD DESIGN

OPTION 1 OPTION 2

114

15 28

0.004

SEATING PLANE

NOTE :

1. JEDEC STD REF MO088

2. BODY LENGTH DIMENSION DOES NOT INCLUDE MOLD PROTRUSION/END FLASH

MOLD PROTRUSION/END FLASH SHALL NOT EXCEED 0.006 in (0.152 mm) PER SIDE

3. DIMENSIONS IN INCHES

51-85031-*C

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CY7C106D

CY7C1006D

Document #: 38-05459 Rev. *E Page 10 of 11

the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended

to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize

its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress

products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.

Figure 2. 28-pin (400-Mil) Molded SOJ, 51-85032

All product and company names mentioned in this document may be the trademarks of their respective holders.

Package Diagrams

PIN 1 I.D

.435

.395 .445

.405

.128

.148

.360

.380

.026

.015

.032

.020

DIMENSIONS IN INCHES MIN.

MAX.

.025 MIN.

.007

.013

.720

.730

114

15 28

0.004

SEATING PLANE

51-85032-*B

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