Cypress Semiconductor MoBL CY62157E Manuale utente

8-Mbit (512K x 16) Static RAM

CY62157E MoBL®

Cypress Semiconductor Corporation • 198ChampionCourt • San Jose,CA 95134-1709 • 408-943-2600

Document #: 38-05695 Rev. *C Revised November 21, 2006

Features

• Very high speed: 45 ns

• Wide voltage range: 4.5V–5.5V

• Ultra-low standby power

—Typical Standby current: 2 µA

—Maximum Standby current: 8 µA (Industrial)

• Ultra-low active power

— Typical active current: 1.8 mA @ f = 1 MHz

• Ultra-low standby power

• Easymemory expansionwithCE1,CE2and OE features

• Automatic power-down when deselected

• CMOS for optimum speed/power

• Available in Pb-free 44-pin TSOP II and 48-ball VFBGA

package

Functional Description[1]

The CY62157E is a high-performance CMOS static RAM

organized as 512K words by 16 bits. This device features

advanced circuit design to provide ultra-low active current.

This is ideal for providing More Battery Life™(MoBL®) in

portable applications such as cellular telephones. The device

also has an automatic power-down feature that significantly

reduces power consumption when addresses are not toggling.

The device can also be put into standby mode when

deselected (CE1HIGH or CE2 LOW or both BHE and BLE are

HIGH). The input/output pins (IO0through IO15) are placed in

a high-impedance state when: deselected (CE1HIGH or CE2

LOW), outputs are disabled (OE HIGH), both Byte High

Enable and Byte Low Enable are disabled (BHE, BLE HIGH),

or during a write operation (CE1LOW, CE2HIGH and WE

LOW).

Writing to the device is accomplished by taking Chip Enable

(CE1 LOW and CE2HIGH) and Write Enable (WE) input LOW.

If Byte Low Enable (BLE) is LOW, then data from IO pins (IO0

through IO7), is written into the location specified on the

address pins (A0through A18). If Byte High Enable (BHE) is

LOW, then data from IO pins (IO8through IO15) is written into

the location specified on the address pins (A0through A18).

Reading from the device is accomplished by taking Chip

Enable (CE1 LOW and CE2HIGH) and Output Enable (OE)

LOW while forcing the Write Enable (WE) HIGH. If Byte Low

Enable (BLE) is LOW, then data from the memory location

specified by the address pins will appear on IO0to IO7. If Byte

HighEnable (BHE)is LOW,thendatafrommemorywillappear

onIO8to IO15. See the truth table at the back of this data sheet

for a complete description of read and write modes.

Note:

1. For best practice recommendations, please refer to the Cypress application note “System Design Guidelines” on http://www.cypress.com.

Logic Block Diagram

512K x 16

RAM Array IO0–IO7

ROW DECODER

COLUMN DECODER

A11

A12

A13

A14

A15

SENSE AMPS

DATA IN DRIVERS

A3IO8–IO15

BLE

BHE

A16

A17

BHE

BLE

A10

A18

POWER-DOWN

CIRCUIT CE2

CE1

CE2

CE1

[+] Feedback

CY62157E MoBL®

Document #: 38-05695 Rev. *C Page 2 of 12

Pin Configuration[2, 3]

Product Portfolio

Product Range

VCC Range (V) Speed

(ns)

Power Dissipation

Operating ICC, (mA) Standby, ISB2

(µA)f = 1MHz f = fmax

Min Typ[4] Max Typ[4] Max Typ[4] Max Typ[4] Max

CY62157E-45 Ind’l 4.5 5.0 5.5 45 1.8 3 18 25 2 8

CY62157E-55[5] Auto 4.5 5.0 5.5 55 1.8 418 35 230

Notes:

2. NC pins are not connected on the die.

3. The 44-pin TSOP II package has only one chip enable (CE) pin.

4. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ), TA= 25°C.

5. Automotive product information is Preliminary.

A11

A10

A3CE1

IO10

IO8

IO9

IO11

IO13

IO12

IO14

IO15

VSS

Vss

IO0

BHE

CE2

A17

BLE

VCC

IO2

IO1

IO3

IO4

IO5IO6

IO7

A15

A14

A13

A12

A18 NC

VFBGA

A16

Vcc

Top View

14 31

15 29

19 27

21 23

TSOP II

Top View

BHE

BLE

[+] Feedback

CY62157E MoBL®

Document #: 38-05695 Rev. *C Page 3 of 12

Maximum Ratings

(Above which the useful life may be impaired. For user guide-

lines, not tested.)

Storage Temperature ................................–65°C to + 150°C

Ambient Temperature with

Power Applied ...........................................–55°C to + 125°C

Supply Voltage to Ground

Potential .......................................................... –0.5V to 6.0V

DC Voltage Applied to Outputs

in High Z State[6, 7]........................................... –0.5V to 6.0V

DC Input Voltage[6, 7]........................................–0.5V to 6.0V

Output Current into Outputs (LOW) ............................20 mA

Static Discharge Voltage ..........................................> 2001V

(per MIL-STD-883, Method 3015)

Latch-Up Current ...................................................> 200 mA

Operating Range

Device Range Ambient

Temperature VCC[8]

CY62157E Industrial –40°C to +85°C 4.5V to 5.5V

Automotive –40°C to +125°C

Electrical Characteristics (Over the Operating Range)

Parameter Description Test Conditions

45 ns (Industrial) 55 ns (Automotive)

UnitMin Typ[4] Max Min Typ[4] Max

VOH Output HIGH

Voltage IOH = –1 mA VCC = 4.5V 2.4 2.4 V

VOL Output LOW

Voltage IOL = 2.1 mA VCC = 4.5V 0.4 0.4 V

VIH Input HIGH

Voltage VCC = 4.5V to 5.5V 2.2 VCC + 0.5 2.2 VCC + 0.5 V

VIL Input LOW

Voltage VCC = 4.5V to 5.5V –0.5 0.8 –0.5 0.8 V

IIX Input Leakage

Current GND < VI< VCC –1 +1 –1 +1 µA

IOZ Output Leakage

Current GND< VO<VCC,Output Disabled –1 +1 –1 +1 µA

ICC VCC Operating

Supply

Current

f = fmax = 1/tRC VCC = VCCmax

IOUT = 0 mA

CMOS levels

18 25 18 35 mA

f = 1 MHz 1.8 3 1.8 4

ISB1 Automatic CE

Power-Down

Current —

CMOS Inputs

CE1> VCC − 0.2V, CE2 <0.2V,

VIN >VCC – 0.2V, VIN <0.2V,

f = fmax (Address and Data Only),

f = 0 (OE, BHE, BLE and WE),

VCC = 3.60V

28 230 µA

ISB2 Automatic CE

Power-Down

Current —

CMOS Inputs

CE1> VCC – 0.2V or CE2< 0.2V,

VIN > VCC – 0.2V or VIN < 0.2V,

f = 0, VCC = 3.60V

28 230 µA

Capacitance[9]

Parameter Description Test Conditions Max Unit

CIN Input Capacitance TA= 25°C, f = 1 MHz, VCC = VCC(typ) 10 pF

COUT Output Capacitance 10 pF

Notes:

6. VIL(min) = –2.0V for pulse durations less than 20 ns for I < 30 mA.

7. VIH(max) = VCC + 0.75V for pulse durations less than 20 ns.

8. Full device AC operation assumes a 100 µs ramp time from 0 to VCC(min) and 200 µs wait time after VCC stabilization.

9. Tested initially and after any design or process changes that may affect these parameters.

[+] Feedback

CY62157E MoBL®

Document #: 38-05695 Rev. *C Page 4 of 12

Thermal Resistance[9]

Parameter Description Test Conditions TSOP II VFBGA Unit

ΘJA Thermal Resistance

(Junction to Ambient) Still Air, soldered on a 3 × 4.5 inch,

two-layer printed circuit board 77 72 °C/W

ΘJC Thermal Resistance

(Junction to Case) 13 8.86 °C/W

AC Test Loads and Waveforms

Parameters Values Unit

R1 1800 Ω

R2 990 Ω

RTH 639 Ω

VTH 1.77 V

Data Retention Characteristics (Over the Operating Range)

Parameter Description Conditions Min Typ[4] Max Unit

VDR VCC for Data Retention 2 V

ICCDR Data Retention Current VCC=2V, CE1>VCC – 0.2V,

CE2< 0.2V, VIN > VCC – 0.2V or VIN < 0.2V Industrial 8 µA

Automotive 30

tCDR[9] Chip Deselect to Data

Retention Time 0ns

tR[10] Operation Recovery Time tRC ns

Data Retention Waveform[11]

Notes:

10.Full device operation requires linear VCC ramp from VDR to VCC(min) >100 µs or stable at VCC(min) >100 µs.

11. BHE.BLE is the AND of both BHE and BLE. Chip can be deselected by either disabling the chip enable signals or by disabling both BHE and BLE.

VCC

OUTPUT

30 pF

INCLUDING

JIG AND

SCOPE

GND 90%

10% 90%

10%

Rise Time = 1 V/ns Fall Time = 1 V/ns

OUTPUT V

Equivalent to: THEVENIN EQUIVALENT

ALL INPUT PULSES

RTH

VCC(min)

tCDR

VDR >2 V

DATA RETENTION MODE

VCC

CE1or

BHE.BLE

CE2

VCC(min)

[+] Feedback

CY62157E MoBL®

Document #: 38-05695 Rev. *C Page 5 of 12

Switching Characteristics Over the Operating Range [12]

Parameter Description

45 ns 55 ns

UnitMin Max Min Max

Read Cycle

tRC Read Cycle Time 45 55 ns

tAA Address to Data Valid 45 55 ns

tOHA Data Hold from Address Change 10 10 ns

tACE CE1LOW and CE2 HIGH to Data Valid 45 55 ns

tDOE OE LOW to Data Valid 22 25 ns

tLZOE OE LOW to LOW Z[13] 5 5 ns

tHZOE OE HIGH to High Z[13, 14] 18 20 ns

tLZCE CE1LOW and CE2 HIGH to Low Z[13] 10 10 ns

tHZCE CE1HIGH and CE2 LOW to High Z[13, 14] 18 20 ns

tPU CE1LOW and CE2 HIGH to Power-Up 0 0ns

tPD CE1HIGH and CE2 LOW to Power-Down 45 55 ns

tDBE BLE/BHE LOW to Data Valid 45 55 ns

tLZBE BLE/BHE LOW to Low Z[13] 10 10 ns

tHZBE BLE/BHE HIGH to HIGH Z[13, 14] 18 20 ns

Write Cycle[15]

tWC Write Cycle Time 45 55 ns

tSCE CE1LOW and CE2 HIGH to Write End 35 40 ns

tAW Address Set-Up to Write End 35 40 ns

tHA Address Hold from Write End 0 0ns

tSA Address Set-Up to Write Start 00ns

tPWE WE Pulse Width 35 40 ns

tBW BLE/BHE LOW to Write End 35 40 ns

tSD Data Set-Up to Write End 25 25 ns

tHD Data Hold from Write End 00ns

tHZWE WE LOW to High-Z[13, 14] 18 20 ns

tLZWE WE HIGH to Low-Z[13] 10 10 ns

Notes:

12.Test conditions for all parameters other than Tri-state parameters assume signal transition time of 3 ns or less, timing reference levels of VCC(typ)/2, input pulse

levels of 0 to VCC(typ), and output loading of the specified IOL/IOH as shown in the “AC Test Loads and Waveforms” section.

13.At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZBE is less than tLZBE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any

given device.

14.tHZOE, tHZCE, tHZBE, and tHZWE transitions are measured when the outputs enter a high-impedance state.

15.The internal Write time of the memory is defined by the overlap of WE, CE1 = VIL, BHE and/or BLE = VIL, and CE2 = VIH. All signals must be ACTIVE to initiate

a write and any of these signals can terminate a write by going INACTIVE. The data input set-up and hold timing should be referenced to the edge of the signal

that terminates the Write.

[+] Feedback

CY62157E MoBL®

Document #: 38-05695 Rev. *C Page 6 of 12

Switching Waveforms

Read Cycle 1 (Address Transition Controlled)[16, 17]

Read Cycle 2 (OE Controlled)[17, 18]

Notes:

16.The device is continuously selected. OE, CE1 = VIL, BHE and/or BLE = VIL, and CE2 = VIH.

17.WE is HIGH for read cycle.

18.Address valid prior to or coincident with CE1, BHE, BLE transition LOW and CE2transition HIGH.

PREVIOUS DATA VALID DATA VALID

tRC

tAA

tOHA

ADDRESS

DATA OUT

50%

DATA VALID

tRC

tACE

tDOE

tLZOE

tLZCE

tPU

HIGH IMPEDANCE

tHZOE

tPD

tHZBE

tLZBE

tHZCE

tDBE

HIGH

ICC

ISB

IMPEDANC

CE1

ADDRESS

VCC

SUPPLY

CURRENT

BHE/BLE

DATA OUT

CE2

[+] Feedback

CY62157E MoBL®

Document #: 38-05695 Rev. *C Page 7 of 12

Write Cycle 1 (WE Controlled)[15, 19, 20, 21]

Write Cycle 2 (CE1or CE2 Controlled)[15, 19, 20, 21]

Notes:

19.Data IO is high impedance if OE = VIH.

20.If CE1goes HIGH and CE2goes LOW simultaneously with WE = VIH, the output remains in a high-impedance state.

21.During this period, the IOs are in output state and input signals should not be applied.

Switching Waveforms (continued)

tHD

tSD

tPWE

tSA

tHA

tAW

tSCE

tWC

tHZOE

VALID DATA

tBW

See Note 21

ADDRESS

DATA IO

BHE/BLE

CE1

CE2

tHD

tSD

tPWE

tHA

tAW

tSCE

tWC

tHZOE

VALID DATA

See Note 21

tBW

tSA

ADDRESS

DATA IO

BHE/BLE

[+] Feedback

CY62157E MoBL®

Document #: 38-05695 Rev. *C Page 8 of 12

Write Cycle 3 (WE Controlled, OE LOW)[20, 21]

Write Cycle 4 (BHE/BLE Controlled, OE LOW)[20, 21]

Switching Waveforms (continued)

VALID DATA

tHD

tSD

tLZWE

tPWE

tSA

tHA

tAW

tSCE

tWC

tHZWE

tBW

See Note 21

CE1

ADDRESS

CE2

DATA IO

BHE/BLE

tHD

tSD

tSA

tHA

tAW

tWC

VALID DATA

tBW

tSCE

tPWE

See Note 21

DATA IO

ADDRESS

CE1

BHE/BLE

CE2

[+] Feedback

CY62157E MoBL®

Document #: 38-05695 Rev. *C Page 9 of 12

Truth Table

CE1CE2WE OE BHE BLE Inputs/Outputs Mode Power

H X X X X X High Z Deselect/Power-Down Standby (ISB)

X L X X X X High Z Deselect/Power-Down Standby (ISB)

X X X X H H High Z Deselect/Power-Down Standby (ISB)

L H H L L L Data Out (IO0–IO15)Read Active (ICC)

L H H L H L Data Out (IO0–IO7);

High Z (IO8–IO15)Read Active (ICC)

L H H L L H High Z (IO0–IO7);

Data Out (IO8–IO15)Read Active (ICC)

L H H H L H High Z Output Disabled Active (ICC)

L H H H H L High Z Output Disabled Active (ICC)

L H H H L L High Z Output Disabled Active (ICC)

L H L X L L Data In (IO0–IO15)Write Active (ICC)

L H L X H L Data In (IO0–IO7);

High Z (IO8–IO15)Write Active (ICC)

L H L X L H High Z (IO0–IO7);

Data In (IO8–IO15)Write Active (ICC)

Ordering Information

Speed

(ns) Ordering Code Package

Diagram Package Type Operating

Range

45 CY62157ELL-45ZSXI 51-85087 44-pin Thin Small Outline Package Type II (Pb-free) Industrial

55 CY62157ELL-55ZSXE 51-85087 44-pin Thin Small Outline Package Type II (Pb-free) Automotive

CY62157ELL-55BVXE 51-85150 48-ball Very Fine Pitch Ball Grid Array (Pb-free)

[+] Feedback

CY62157E MoBL®

Document #: 38-05695 Rev. *C Page 10 of 12

Package Diagrams

44-pin TSOP II (51-85087)

51-85087-*A

[+] Feedback

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