Cypress Semiconductor STK22C48 Manuale utente

STK22C48

16 Kbit (2K x 8) AutoStore nvSRAM

Cypress Semiconductor Corporation • 198 Champion Court • San Jose,CA 95134-1709 • 408-943-2600

Document Number: 001-51000 Rev. ** Revised January 30, 2009

Features

■25 ns and 45 ns access times

■Hands off automatic STORE on power down with external 68

µF capacitor

■STORE to QuantumTrap™ nonvolatile elements is initiated by

software, hardware, or AutoStore™ on power down

■RECALL to SRAM initiated by software or power up

■Unlimited Read, Write, and Recall cycles

■1,000,000 STORE cycles to QuantumTrap

■100 year data retention to QuantumTrap

■Single 5V+10% operation

■Commercial and industrial temperatures

■28-pin 300 mil and (330 mil) SOIC package

■RoHS compliance

Functional Description

The Cypress STK22C48 is a fast static RAM with a nonvolatile

element in each memory cell. The embedded nonvolatile

elements incorporate QuantumTrap technology producing the

world’s most reliable nonvolatile memory. The SRAM provides

unlimited read and write cycles, while independent nonvolatile

data resides in the highly reliable QuantumTrap cell. Data

transfers from the SRAM to the nonvolatile elements (the

STORE operation) takes place automatically at power down. On

power up, data is restored to the SRAM (the RECALL operation)

fromthe nonvolatile memory.AhardwareSTOREisinitiatedwith

the HSB pin.

STORE/

RECALL

CONTROL

POWER

CONTROL

STATIC RAM

ARRAY

32 X 512

Quantum Trap

32 X 512

STORE

RECALL

COLUMN I/O

COLUMN DEC

ROW DECODER

INPUT BUFFERS

HSB

CC V

CAP

Logic Block Diagram

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STK22C48

Document Number: 001-51000 Rev. ** Page 2 of 14

Pin Configurations Figure 1. Pin Diagram - 28-Pin SOIC

Table 1. Pin Definitions

Pin Name Alt IO Type Description

A0–A10 Input Address Inputs. Used to select one of the 2,048 bytes of the nvSRAM.

DQ0-DQ7Input or Output Bidirectional Data IO Lines. Used as input or output lines depending on operation.

WE WInput Write Enable Input, Active LOW. When the chip is enabled and WE is LOW, data on the IO

pins is written to the specific address location.

CE EInput Chip Enable Input, Active LOW. When LOW, selects the chip. WhenHIGH,deselectsthechip.

OE GInput Output Enable, Active LOW. The active LOW OE input enables the data output buffers during

read cycles. Deasserting OE HIGH causes the IO pins to tri-state.

VSS Ground Ground for the Device.The device is connected to ground of the system.

VCC Power Supply Power Supply Inputs to the Device.

HSB Input or Output HardwareStoreBusy(HSB).WhenLOW,thisoutputindicatesaHardwareStoreisinprogress.

When pulled low external to the chip, it initiates a nonvolatile STORE operation. A weak internal

pull up resistor keeps this pin high if not connected (connection optional).

VCAP Power Supply AutoStore Capacitor. Supplies power to nvSRAM during power loss to store data from SRAM

to nonvolatile elements.

NC No Connect No Connect. This pin is not connected to the die.

CAP

HSB

DQ6

DQ7

DQ5

DQ4

DQ3

DQ0

DQ1

DQ2

28-SOIC

Top View

(Not To Scale)

[+] Feedback

STK22C48

Document Number: 001-51000 Rev. ** Page 3 of 14

Device Operation

The STK22C48 nvSRAM is made up of two functional compo-

nents paired in the same physical cell. These are an SRAM

memory cell and a nonvolatile QuantumTrap cell. The SRAM

memory cell operates as a standard fast static RAM. Data in the

SRAM is transferred to the nonvolatile cell (the STORE

operation) or from the nonvolatile cell to SRAM (the RECALL

operation). This unique architecture enables the storage and

recall of all cells in parallel. During the STORE and RECALL

operations, SRAM Read and Write operations are inhibited. The

STK22C48 supports unlimited reads and writes similar to a

typical SRAM. In addition, it provides unlimited RECALL opera-

tions from the nonvolatile cells and up to one million STORE

operations.

SRAM Read

TheSTK22C48 performsa Read cyclewheneverCE and OEare

LOW while WE and HSB are HIGH. The address specified on

pins A0–10 determines the 2,048 data bytes accessed. When the

Read is initiated by an address transition, the outputs are valid

after a delay of tAA (Read cycle 1). If the Read is initiated by CE

or OE, the outputs are valid at tACE or at tDOE, whichever is later

(Read cycle 2). The data outputs repeatedly respond to address

changes within the tAA access time without the need for transi-

tions on any control input pins, and remains valid until another

address change or until CE or OE is brought HIGH, or WE or

HSB is brought LOW.

SRAM Write

A Write cycle is performed whenever CE and WE are LOW and

HSBis HIGH.Theaddressinputsmustbe stable priortoentering

the Write cycle and must remain stable until either CE or WE

goes HIGH at the end of the cycle. The data on the common IO

pins DQ0–7 are written into the memory if it has valid tSD, before

the end of a WE controlled Write or before the end of an CE

controlled Write. Keep OE HIGH during the entire Write cycle to

avoid data bus contention on common IO lines. If OE is left LOW,

internal circuitry turns off the output buffers tHZWE after WE goes

LOW.

AutoStore Operation

During normal operation, the device draws current from VCC to

charge a capacitor connected to the VCAP pin. This stored

charge is used by the chip to perform a single STORE operation.

If the voltage on the VCC pin drops below VSWITCH, the part

automatically disconnects the VCAP pin from VCC. A STORE

operation is initiated with power provided by the VCAP capacitor.

Figure 2 shows the proper connection of the storage capacitor

(VCAP) for automatic store operation. A charge storage capacitor

between 68 µF and 220 µF (+20%) rated at 6V should be

In system power mode, both VCC and VCAP are connected to the

+5V power supply without the 68 μF capacitor. In this mode, the

AutoStore function of the STK22C48 operates on the stored

system charge as power goes down. The user must, however,

guarantee that VCC does not drop below 3.6V during the 10 ms

STORE cycle.

To prevent unneeded STORE operations, automatic STOREs

and those initiated by externally driving HSB LOW are ignored,

unless at least one WRITE operation takes place since the most

recent STORE or RECALL cycle. An optional pull up resistor is

shown connected to HSB. This is used to signal the system that

the AutoStore cycle is in progress.

AutoStore Inhibit mode

If an automatic STOREon power loss is not required, then VCC

is tied to ground and +5V is applied to VCAP (Figure 3). This is

the AutoStore Inhibit mode, where the AutoStore function is

disabled.Ifthe STK22C48isoperatedin this configuration,refer-

ences to VCC are changed to VCAP throughout this data sheet.

In this mode, STOREoperations are triggered with the HSB pin.

It is not permissible to change between these three options “on

the fly”.

Figure 2. AutoStore Mode

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STK22C48

Document Number: 001-51000 Rev. ** Page 4 of 14

Figure 3. AutoStore Inhibit Mode

Hardware STORE (HSB) Operation

The STK22C48 provides the HSB pin for controlling and

acknowledging the STORE operations. The HSB pin is used to

request a hardware STORE cycle. When the HSB pin is driven

LOW, the STK22C48 conditionally initiates a STORE operation

after tDELAY. An actual STORE cycle only begins if a Write to the

SRAM takes place since the last STORE or RECALL cycle. The

HSB pin also acts as an open drain driver that is internally driven

LOW to indicate a busy condition, while the STORE (initiated by

any means) is in progress. Pull up this pin with an external 10K

ohm resistor to VCAP if HSB is used as a driver.

SRAM Read and Write operations, that are in progress when

HSB is driven LOW by any means, are given time to complete

before the STORE operation is initiated. After HSB goes LOW,

the STK22C48 continues SRAM operations for tDELAY. During

tDELAY, multiple SRAM Read operations take place. If a Write is

in progress when HSB is pulled LOW, it allows a time, tDELAY to

complete. However, any SRAM Write cycles requested after

HSB goes LOW are inhibited until HSB returns HIGH.

During any STORE operation, regardless of how it is initiated,

the STK22C48 continues to drive the HSB pin LOW, releasing it

only when the STORE is complete. After completing the STORE

operation, the STK22C48 remains disabled until the HSB pin

returns HIGH.

If HSB is not used, it is left unconnected.

Hardware RECALL (Power Up)

During power up or after any low power condition (VCC <

VRESET), an internal RECALL request is latched. When VCC

once again exceeds the sense voltage of VSWITCH, a RECALL

cycle is automatically initiated and takes tHRECALL to complete.

Data Protection

The STK22C48 protects data from corruption during low voltage

conditions by inhibiting all externally initiated STORE and Write

operations. The low voltage condition is detected when VCC is

less than VSWITCH. If the STK22C48 is in a Write mode (both CE

and WE are low) at power up after a RECALL or after a STORE,

the Write is inhibited until a negative transition on CE or WE is

detected. This protects against inadvertent writes during power

up or brown out conditions.

Noise Considerations

The STK22C48 is a high speed memory. It must have a high

frequency bypass capacitor of approximately 0.1 µF connected

between VCC and VSS, using leads and traces that are as short

as possible. As with all high speed CMOS ICs, careful routing of

power, ground, and signals reduce circuit noise.

Hardware Protect

The STK22C48 offers hardware protection against inadvertent

STORE operation and SRAM Writes during low voltage condi-

tions. When VCAP<VSWITCH, all externally initiated STORE

operations and SRAM Writes are inhibited. AutoStore can be

completely disabled by tying VCC to ground and applying +5V to

VCAP. This is the AutoStore Inhibit mode; in this mode, STOREs

are only initiated by explicit request using either the software

sequence or the HSB pin.

Low Average Active Power

CMOS technology provides the STK22C48 the benefit of

drawing significantly less current whenitis cycledattimes longer

than 50 ns. Figure 4 shows the relationship between ICC and

Read or Write cycle time. Worst case current consumption is

shown for both CMOS and TTL input levels (commercial temper-

ature range, VCC = 5.5V, 100% duty cycle on chip enable). Only

standby current is drawn when the chip is disabled. The overall

average current drawn by the STK22C48 depends on the

following items:

■The duty cycle of chip enable

■The overall cycle rate for accesses

■The ratio of Reads to Writes

■CMOS versus TTL input levels

■The operating temperature

■The VCC level

■IO loading

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[+] Feedback

STK22C48

Document Number: 001-51000 Rev. ** Page 5 of 14

Preventing Store

The STORE function is disabled by holding HSB high with a

driver capable of sourcing 30 mA at a VOH of at least 2.2V,

because it must overpower the internal pull down device. This

device drives HSB LOW for 20 ns at the onset of a STORE.

When the STK22C48 is connected for AutoStore operation

(system VCC connected to VCC and a 68 μF capacitor on VCAP)

and VCC crosses VSWITCH on the way down, the STK22C48

attempts to pull HSB LOW. If HSB does not actually get below

VIL, the part stops trying to pull HSB LOW and abort the STORE

attempt.

Best Practices

nvSRAM products have been used effectively for over 15 years.

While ease of use is one of the product’s main system values,

experience gained working with hundreds of applications has

resulted in the following suggestions as best practices:

■The nonvolatile cells in an nvSRAM are programmed on the

test floor during final test and quality assurance. Incoming

inspection routines at customer or contract manufacturer’s

sitessometimesreprogramthesevalues.FinalNVpatternsare

typically repeating patterns of AA, 55, 00, FF, A5, or 5A. The

end product’s firmware should not assume that an NV array is

in a set programmed state. Routines that check memory

content values to determine first time system configuration,

cold or warm boot status, and so on must always program a

unique NV pattern (for example, complex 4-byte pattern of 46

E649 53 hex ormorerandom bytes) aspartof the finalsystem

manufacturing test to ensure these system routines work

consistently.

■Power up boot firmware routines should rewrite the nvSRAM

intothedesiredstate.Whilethe nvSRAMisshipped inapreset

state, best practice is to again rewrite the nvSRAM into the

desired state as a safeguard against events that might flip the

bit inadvertently (program bugs, incoming inspection routines,

and so on).

■TheVCAPvaluespecifiedinthisdatasheetincludesaminimum

and a maximum value size. The best practice is to meet this

requirementandnotexceedthemaximumVCAPvaluebecause

the higher inrush currents may reduce the reliability of the

internal pass transistor. Customers who want to use a larger

VCAP value to make sure there is extra store charge should

discuss their VCAP size selection with Cypress.

Figure 4. Current Versus Cycle Time (Read)

Figure 5. Current Versus Cycle Time (Write)

Table 2. Hardware Mode Selection

CE WE HSB A10–A0 Mode IO Power

H X H X Not Selected Output High Z Standby

L H H X Read SRAM Output Data Active[1]

L L H X Write SRAM Input Data Active

X X L X Nonvolatile STORE Output High Z ICC2[2]

Notes

1. I/O state assumes OE < VIL. Activation of nonvolatile cycles does not depend on state of OE.

2. HSB STORE operation occurs only if an SRAM Write is done since the last nonvolatile cycle. After the STORE (If any) completes, the part goes into standby mode,

inhibiting all operations until HSB rises.

[+] Feedback

STK22C48

Document Number: 001-51000 Rev. ** Page 6 of 14

Maximum Ratings

Exceeding maximum ratings may shorten the useful life of the

device. These user guidelines are not tested.

Storage Temperature ................................. –65°C to +150°C

Temperature under bias.............................. –55°C to +125°C

Supply Voltage on VCC Relative to GND..........–0.5V to 7.0V

Voltage on Input Relative to Vss............–0.6V to VCC + 0.5V

Voltage on DQ0-7 or HSB .......................–0.5V to Vcc + 0.5V

Power Dissipation .........................................................1.0W

DC Output Current (1 output at a time, 1s duration)....15 mA

Operating Range

Range Ambient Temperature VCC

Commercial 0°C to +70°C 4.5V to 5.5V

Industrial -40°C to +85°C 4.5V to 5.5V

DC Electrical Characteristics

Over the operating range (VCC = 4.5V to 5.5V) [3]

Parameter Description Test Conditions Min Max Unit

ICC1 Average VCC Current tRC = 25 ns

tRC = 45 ns

Dependent on output loading and cycle

rate. Values obtained without output loads.

IOUT = 0 mA.

Commercial 85

65 mA

Industrial 90

65 mA

ICC2 Average VCC Current during

STORE All Inputs Do Not Care, VCC = Max

Average current for duration tSTORE 3mA

ICC3 Average VCC Current at tRC=

200 ns, 5V, 25°C Typical WE > (VCC – 0.2V). All other inputs cycling.

Dependent on output loading and cycle rate. Values

obtained without output loads.

10 mA

ICC4 Average VCAP Current during

AutoStore Cycle All Inputs Do Not Care, VCC = Max

Average current for duration tSTORE 2mA

ISB1[4] Average Vcc Current

(Standby, Cycling TTL Input

Levels)

tRC = 25 ns, CE > VIH

tRC = 45 ns, CE > VIH Commercial 25

18 mA

Industrial 26

19 mA

ISB2[4] VCC Standby Current CE > (VCC – 0.2V). All others VIN <0.2V or > (VCC – 0.2V).

Standby current level after nonvolatile cycle is complete.

Inputs are static. f = 0 MHz.

1.5 mA

IILK Input Leakage Current VCC = Max, VSS < VIN <VCC -1 +1 μA

IOLK Off State Output Leakage

Current VCC = Max, VSS < VIN <VCC, CE or OE > VIH or WE < VIL -5 +5 μA

VIH Input HIGH Voltage 2.2 VCC +

0.5 V

VIL Input LOW Voltage VSS – 0.5 0.8 V

VOH Output HIGH Voltage IOUT = –4 mA except HSB 2.4 V

VOL Output LOW Voltage IOUT = 8 mA except HSB 0.4 V

VBL Logic ‘0’ Voltage on HSB Output IOUT = 3 mA 0.4 V

VCAP Storage Capacitor Between VCAP pin and Vss, 6V rated. 68 uF -10%, +20%

nom. 61 220 µF

Data Retention and Endurance

Parameter Description Min Unit

DATARData Retention 100 Years

NVCNonvolatile STORE Operations 1,000 K

Notes

3. VCC reference levels throughout this data sheet refer to VCC if that is where the power supply connection is made, or VCAP if VCC is connected to ground.

4. CE > VIH does not produce standby current levels until any nonvolatile cycle in progress has timed out.

[+] Feedback

STK22C48

Document Number: 001-51000 Rev. ** Page 7 of 14

Capacitance

In the following table, the capacitance parameters are listed.[5]

Parameter Description Test Conditions Max Unit

CIN Input Capacitance TA= 25°C, f = 1 MHz,

VCC = 0 to 3.0V 8pF

COUT Output Capacitance 7pF

Thermal Resistance

In the following table, the thermal resistance parameters are listed.[5]

Parameter Description Test Conditions 28-SOIC

(300 mil) 28-SOIC

(330 mil) Unit

ΘJA Thermal Resistance

(Junction to Ambient) Test conditions follow standard test methods

and procedures for measuring thermal

impedance, per EIA / JESD51.

TBD TBD °C/W

ΘJC Thermal Resistance

(Junction to Case) TBD TBD °C/W

Figure 6. AC Test Loads

AC Test Conditions

5.0V

Output

30 pF

R1 963Ω

512Ω

5.0V

Output

5 pF

R1 963

512

For Tri-state Specs

Input Pulse Levels....................................................0V to 3V

Input Rise and Fall Times (10% to 90%)...................... <5 ns

Input and Output Timing Reference Levels.................... 1.5V

Note

5. These parameters are guaranteed by design and are not tested.

[+] Feedback

STK22C48

Document Number: 001-51000 Rev. ** Page 8 of 14

AC Switching Characteristics

SRAM Read Cycle

Parameter Description 25 ns 45 ns Unit

Min Max Min Max

Cypress

Parameter Alt

tACE tELQV Chip Enable Access Time 25 45 ns

tRC [6] tAVAV, tELEH Read Cycle Time 25 45 ns

tAA [7] tAVQV Address Access Time 25 45 ns

tDOE tGLQV Output Enable to Data Valid 10 20 ns

tOHA [7] tAXQX Output Hold After Address Change 5 5 ns

tLZCE [8] tELQX Chip Enable to Output Active 5 5 ns

tHZCE [8] tEHQZ Chip Disable to Output Inactive 10 15 ns

tLZOE [8] tGLQX Output Enable to Output Active 0 0 ns

tHZOE [8] tGHQZ Output Disable to Output Inactive 10 15 ns

tPU [5] tELICCH Chip Enable to Power Active 0 0 ns

tPD [5] tEHICCL Chip Disable to Power Standby 25 45 ns

Switching Waveforms Figure 7. SRAM Read Cycle 1: Address Controlled [6, 7]

Figure 8. SRAM Read Cycle 2: CE and OE Controlled [6]

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Notes

6. WE and HSB must be High during SRAM Read cycles.

7. Device is continuously selected with CE and OE both Low.

8. Measured ±200 mV from steady state output voltage.

[+] Feedback

STK22C48

Document Number: 001-51000 Rev. ** Page 9 of 14

SRAM Write Cycle

Parameter Description 25 ns 45 ns Unit

Min Max Min Max

Cypress

Parameter Alt

tWC tAVAV Write Cycle Time 25 45 ns

tPWE tWLWH, tWLEH Write Pulse Width 20 30 ns

tSCE tELWH, tELEH Chip Enable To End of Write 20 30 ns

tSD tDVWH, tDVEH Data Setup to End of Write 10 15 ns

tHD tWHDX, tEHDX Data Hold After End of Write 0 0 ns

tAW tAVWH, tAVEH Address Setup to End of Write 20 30 ns

tSA tAVWL, tAVEL Address Setup to Start of Write 0 0 ns

tHA tWHAX, tEHAX Address Hold After End of Write 0 0 ns

tHZWE [8,9] tWLQZ Write Enable to Output Disable 10 14 ns

tLZWE [8] tWHQX Output Active After End of Write 5 5 ns

Switching Waveforms Figure 9. SRAM Write Cycle 1: WE Controlled [10, 11]

Figure 10. SRAM Write Cycle 2: CE Controlled [10, 11]

SCE

PWE

HZWE

LZWE

ADDRESS

DATA IN

DATA OUT

DATA VALID

HIGH IMPEDANCE

PREVIOUS DATA

ADDRESS

SCE

PWE

DATA IN

DATA OUT HIGH IMPEDANCE

DATA VALID

Notes

9. If WE is Low when CE goes Low, the outputs remain in the high impedance state.

10.HSB must be high during SRAM Write cycles.

11. CE or WE must be greater than VIH during address transitions.

[+] Feedback

STK22C48

Document Number: 001-51000 Rev. ** Page 10 of 14

AutoStore or Power Up RECALL

Parameter Alt Description STK22C48 Unit

Min Max

tHRECALL [12] tRESTORE Power up RECALL Duration 550 μs

tSTORE [14, 15] tHLHZ STORE Cycle Duration 10 ms

tDELAY [13] tHLQZ , tBLQZ Time Allowed to Complete SRAM Cycle 1 μs

VSWITCH Low Voltage Trigger Level 4.0 4.5 V

VRESET Low Voltage Reset Level 3.6 V

tVSBL[10] Low Voltage Trigger (VSWITCH) to HSB Low 300 ns

Switching Waveform Figure 11. AutoStore/Power Up RECALL

Notes

12.tHRECALL starts from the time VCC rises above VSWITCH.

13.CE and OE low for output behavior.

14.CE and OE low and WE high for output behavior.

15.HSB is asserted low for 1us when VCAP drops through VSWITCH. If an SRAM Write has not taken place since the last nonvolatile cycle, HSB is released and no store

takes place.

[+] Feedback

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