Cypress 256K (32K x 8) CY62256 Manuale utente

256K (32K x 8) Static RAM

CY62256

Cypress Semiconductor Corporation • 3901 North First Street • San Jose • CA 95134 • 408-943-2600

Document #: 38-05248 Rev. *B Revised August 27, 2002

Features

• High speed: 55 ns and 70 ns

• Voltage range: 4.5V–5.5V operation

• Low active power (70 ns, LL version)

—275 mW (max.)

• Low standby power (70 ns, LL version)

—28 µW (max.)

•Easy memory expansion with CE and OE features

•TTL-compatible inputs and outputs

•Automatic power-down when deselected

•CMOS for optimum speed/power

•Package available in a standard 450-mil-wide (300-mil

body width) 28-lead narrow SOIC, 28-lead TSOP-1,

28-lead reverse TSOP-1, and 600-mil 28-lead PDIP

packages

Functional Description[1]

The CY62256 is a high-performance CMOS static RAM

organized as 32K words by 8 bits. Easy memory expansion is

provided by an active LOW chip enable (CE) and active LOW

output enable (OE) and three-state drivers.This device has an

automatic power-down feature, reducing the power

consumption by 99.9% when deselected.

An active LOW write enable signal (WE) controls the

writing/reading operation of the memory. When CE and WE

inputs are both LOW, data on the eight data input/output pins

(I/O0through I/O7) is written into the memory location

addressed by the address present on the address pins (A0

throughA14). Readingthe device isaccomplished by selecting

the device and enabling the outputs, CE and OE active LOW,

while WE remains inactive or HIGH. Under these conditions,

the contents of the location addressed by the information on

address pins are present on the eight data input/output pins.

The input/output pins remainin a high-impedance state unless

the chip is selected, outputs are enabled, and write enable

(WE) is HIGH.

COLUMN

DECODER

ROW DECODER

SENSE AMPS

INPUTBUFFER

POWER

DOWN

I/O0

I/O1

I/O2

I/O3

512 x 512

ARRA

I/O7

I/O6

I/O5

I/O4

A10

A13

A11

A12

A14

Logic Block Diagram

Note:

1. For best practice recommendations, please refer to the Cypress application note “System Design Guidelines”on http://www.cypress.com.

CY62256

Document #: 38-05248 Rev. *B Page 2 of 11

Pin Configurations

Maximum Ratings

(Above which the useful life may be impaired. For user guide-

lines, not tested.)

Storage Temperature .................................–65°C to +150°C

Ambient Temperature with

Power Applied...................................................0°C to +70°C

Supply Voltage to Ground Potential

(Pin 28 to Pin 14)...........................................–0.5V to +7.0V

DC Voltage Applied to Outputs

in High-Z State[2]....................................–0.5V to VCC + 0.5V

DC Input Voltage[2] ................................–0.5V to VCC + 0.5V

Output Current into Outputs (LOW).............................20 mA

Static Discharge Voltage.......................................... > 2001V

(per MIL-STD-883, Method 3015)

Latch-up Current.................................................... > 200 mA

14 15

Top View

Narrow SOIC

GND

A10

A11

A12

A13

VCC

I/O7

I/O6

I/O5

I/O4

A14

I/O0

I/O1

I/O2

I/O3

510

I/O

GND

I/O

TSOP I

Top View

(not to scale)

Reverse Pinout

510

I/O

GND

I/O

TSOP I

Top View

(not to scale)

14 15

Top View

DIP

GND

A10

A11

A12

A13

VCC

I/O7

I/O6

I/O5

I/O4

A14

I/O0

I/O1

I/O2

I/O3

Operating Range

Range Ambient Temperature VCC

Commercial 0°C to +70°C 5V ±10%

Industrial –40°C to +85°C 5V ±10%

Electrical Characteristics Over the Operating Range

Parameter Description Test Conditions CY62256−55 CY62256−70 UnitMin. Typ.[3] Max. Min. Typ.[3] Max.

VOH Output HIGH Voltage VCC = Min., IOH = −1.0 mA 2.4 2.4 V

VOL Output LOW Voltage VCC = Min., IOL = 2.1 mA 0.4 0.4 V

VIH Input HIGH Voltage 2.2 VCC

+0.5V 2.2 VCC

+0.5V V

VIL Input LOW Voltage –0.5 0.8 –0.5 0.8 V

IIX Input Leakage Current GND <VI< VCC –0.5 +0.5 –0.5 +0.5 µA

IOZ Output Leakage Current GND <VO <VCC,Output Disabled –0.5 +0.5 –0.5 +0.5 µA

ICC VCC Operating Supply

Current VCC = Max., IOUT = 0 mA,

f = fMAX = 1/tRC 28 55 28 55 mA

L255025 50 mA

LL 25 50 25 50 mA

ISB1 Automatic CE

Power-down Current—

TTL Inputs

Max. VCC, CE > VIH,

VIN > VIH or VIN < VIL, f = fMAX 0.5 2 0.5 2mA

L0.40.60.4 0.6 mA

LL 0.3 0.5 0.3 0.5 mA

Notes:

2. VIL (min.)= −2.0V for pulse durations of less than 20 ns.

3. Typical specifications are the mean values measured over a large sample size across normal production process variations and aretakenatnominalconditions

(TA= 25°C, VCC). Parameters are guaranteed by design and characterization, and not 100% tested.

CY62256

Document #: 38-05248 Rev. *B Page 3 of 11

ISB2 Automatic CE

Power-down Current—

CMOS Inputs

Max. VCC, CE > VCC −0.3V

VIN > VCC −0.3V, or VIN <

0.3V, f = 0

15 1 5 mA

L250250 µA

LL 0.1 5 0.1 5µA

Indust’l Temp Range LL 0.1 10 0.1 10 µA

Capacitance[4]

Parameter Description Test Conditions Max. Unit

CIN Input Capacitance TA= 25°C, f = 1 MHz,

VCC = 5.0V 6pF

COUT Output Capacitance 8pF

Electrical Characteristics Over the Operating Range (continued)

Parameter Description Test Conditions CY62256−55 CY62256−70 UnitMin. Typ.[3] Max. Min. Typ.[3] Max.

AC Test Loads and Waveforms

Data Retention Characteristics

Parameter Description Conditions[5] Min. Typ.[3] Max. Unit

VDR VCC for Data Retention 2.0 V

ICCDR Data Retention Current L VCC = 3.0V, CE > VCC −0.3V,

VIN > VCC −0.3V, or VIN < 0.3V 250 µA

LL 0.1 5µA

LL Ind’l0.1 10 µA

tCDR[4] Chip Deselect to Data Retention Time 0ns

tR[4] Operation Recovery Time tRC ns

Data Retention Waveform

Notes:

4. Tested initially and after any design or process changes that may affect these parameters.

5. No input may exceed VCC + 0.5V.

3.0V

OUTPUT

R1 1800Ω

990Ω

100 pF

INCLUDING

JIG AND

SCOPE

GND

90%

10% 90%

10%

<5ns <5ns

OUTPUT

R1 1800 Ω

990Ω

5pF

INCLUDING

JIG AND

SCOPE

(a) (b)

OUTPUT 1.77V

Equivalent to: THÉVENIN EQUIVALENT

ALL INPUT PULSES

639Ω

3.0V3.0V

tCDR

VDR >2V

DATA RETENTION MODE

VCC

CY62256

Document #: 38-05248 Rev. *B Page 4 of 11

Switching Characteristics Over the Operating Range[6]

Parameter Description

CY62256−55 CY62256−70

UnitMin. Max. Min. Max.

Read Cycle

tRC Read Cycle Time 55 70 ns

tAA Address to Data Valid 55 70 ns

tOHA Data Hold from Address Change 5 5ns

tACE CE LOW to Data Valid 55 70 ns

tDOE OE LOW to Data Valid 25 35 ns

tLZOE OE LOW to Low-Z[7] 5 5 ns

tHZOE OE HIGH to High-Z[7, 8] 20 25 ns

tLZCE CE LOW to Low-Z[7] 5 5 ns

tHZCE CE HIGH to High-Z[7, 8] 20 25 ns

tPU CE LOW to Power-up 0 0ns

tPD CE HIGH to Power-down 55 70 ns

Write Cycle[9, 10]

tWC Write Cycle Time 55 70 ns

tSCE CE LOW to Write End 45 60 ns

tAW Address Set-up to Write End 45 60 ns

tHA Address Hold from Write End 0 0ns

tSA Address Set-up to Write Start 0 0ns

tPWE WE Pulse Width 40 50 ns

tSD Data Set-up to Write End 25 30 ns

tHD Data Hold from Write End 0 0ns

tHZWE WE LOW to High-Z[7, 8] 20 25 ns

tLZWE WE HIGH to Low-Z[7] 5 5 ns

Switching Waveforms

Notes:

6. Test conditions assume signal transition time of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified

IOL/IOH and 100-pF load capacitance.

7. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device.

8. tHZOE, tHZCE, and tHZWE are specified withCL= 5 pF as in (b) of AC Test Loads. Transition is measured±500 mV from steady-state voltage.

9. The internalWrite time of the memory is defined by the overlap of CELOWandWELOW.BothsignalsmustbeLOW toinitiateaWriteandeithersignalcanterminate

a Write by going HIGH. The data input set-up and hold timing shouldbe referencedto the rising edge ofthe signal that terminates the Write.

10. The minimum Write cycle time for Write cycle #3 (WEcontrolled, OE LOW) is the sum of tHZWE and tSD

11. Device is continuously selected. OE, CE = VIL.

12. WEis HIGH for Read cycle.

ADDRESS

DATA OUT PREVIOUS DATA VALID DATA VALID

tRC

tAA

tOHA

Read Cycle No. 1

[11, 12]

CY62256

Document #: 38-05248 Rev. *B Page 5 of 11

Notes:

13. Address valid prior to or coincident with CEtransition LOW.

14. Data I/O is high impedance if OE= VIH.

15. If CE goes HIGH simultaneously with WE HIGH, the outputremainsin a high-impedance state.

Switching Waveforms (continued)

50%

DATA VALID

tRC

tACE

tDOE

tLZOE

tLZCE

tPU

DATA OUT HIGH IMPEDANCE IMPEDANCE

ICC

ISB

tHZOE

tHZCE

tPD

HIGH

VCC

SUPPLY

CURRENT

Read Cycle No. 2 [12, 13]

tHD

tSD

tPWE

tSA

tHA

tAW

tWC

DATA I/O

ADDRESS

tHZOE

DATAIN VALID

NOTE

Write Cycle No. 1 (WE Controlled) [9, 14, 15]

tWC

tAW

tSA tHA

tHD

tSD

tSCE

DATA I/O

ADDRESS

DATAIN VALID

Write Cycle No. 2 (CE Controlled) [9, 14, 15]

CY62256

Document #: 38-05248 Rev. *B Page 6 of 11

Note:

16. During this period, the I/Os are in output state and input signals should not be applied.

Switching Waveforms (continued)

DATA I/O

ADDRESS

tHD

tSD

tLZWE

tSA

tHA

tAW

tWC

tHZWE

DATAIN VALID

Write Cycle No. 3 (WE Controlled, OE LOW) [10, 15]

NOTE 16

CY62256

Document #: 38-05248 Rev. *B Page 7 of 11

Typical DC and AC Characteristics

1.2

1.4

1.0

0.6

0.4

0.2

4.0 4.5 5.0 5.5 6.0

1.6

1.4

1.2

1.0

0.8

−55 25 125

1.2

1.0

0.8

NORMALIZED t AA

120

100

0.0 1.0 2.0 3.0 4.0

OUTPUT SOURCE CURRENT (mA)

SUPPLY VOLTAGE (V)

NORMALIZED SUPPLY CURRENT

vs. SUPPLY VOLTAGE

NORMALIZED ACCESS TIME

vs. AMBIENT TEMPERATURE

AMBIENT TEMPERATURE (°C)

NORMALIZED SUPPLY CURRENT

vs. AMBIENT TEMPERATURE

AMBIENT TEMPERATURE (°C)

OUTPUT VOLTAGE (V)

OUTPUT SOURCE CURRENT

vs. OUTPUT VOLTAGE

0.0

0.8

1.4

1.1

1.0

0.9

4.0 4.5 5.0 5.5 6.0

NORMALIZED t

SUPPLY VOLTAGE (V)

NORMALIZED ACCESS TIME

vs. SUPPLY VOLTAGE

120

140

100

0.0 1.0 2.0 3.0 4.0

OUTPUT SINK CURRENT (mA)

OUTPUT VOLTAGE (V)

OUTPUT SINK CURRENT

vs. OUTPUT VOLTAGE

0.6

0.4

0.2

0.0

NORMALIZED I

NORMALIZED I , I

CC SB

ICC

VCC =5.0V VCC =5.0V

TA=25°C

VCC =5.0V

TA=25°C

ISB

TA=25°C

0.6

0.8

1.3

1.2

VIN =5.0V

TA=25°C

1.4

VCC =5.0V

VIN =5.0V

−55 25 105

2.5

2.0

1.5

CURRENT

vs. AMBIENT TEMPERATURE

AMBIENT TEMPERATURE (°C)

1.0

0.5

0.0

-0.5

ISB

3.0

STANDBY

VCC =5.0V

VIN =5.0V

ISB2 µA

CY62256

Document #: 38-05248 Rev. *B Page 8 of 11

Typical DC and AC Characteristics (continued)

3.0

2.5

2.0

1.5

1.0

0.5

0.0 1.0 2.0 3.0 4.0

NORMALIZED I PO

SUPPLY VOLTAGE (V)

TYPICAL POWER-ON CURRENT

vs. SUPPLY VOLTAGE 30.0

25.0

20.0

15.0

10.0

5.0

0 200 400 600 800

DELTA t (ns)

CAPACITANCE (pF)

TYPICAL ACCESS TIME CHANGE

vs. OUTPUT LOADING 1.25

1.00

0.75

10 20 30 40

NORMALIZED ICC

CYCLE FREQUENCY (MHz)

NORMALIZED ICC vs.CYCLETIME

0.0 5.0 0.0 1000 0.50

VCC =4.5V

TA=25°C

VCC =5.0V

TA=25°C

VIN =0.5V

Truth Table

CE WE OE Inputs/Outputs Mode Power

H X X High-Z Deselect/Power-down Standby (ISB)

L H L Data Out Read Active (ICC)

L L X Data In Write Active (ICC)

L H H High-Z Deselect, Output Disabled Active (ICC)

Ordering Information

Speed

(ns) Ordering Code Package

Name Package Type Operating

Range

55 CY62256LL−55SNI SN28 28-lead (300-Mil Narrow Body) Narrow SOIC Industrial

CY62256LL−55ZI Z28 28-lead Thin Small Outline Package

70 CY62256−70SNC SN28 28-lead (300-Mil Narrow Body) Narrow SOIC Commercial

CY62256L−70SNC

CY62256LL−70SNC

CY62256L–70SNI Industrial

CY62256LL−70SNI

CY62256LL−70ZC Z28 28-lead Thin Small Outline Package Commercial

CY62256LL−70ZI Z28 Industrial

CY62256−70PC P15 28-lead (600-Mil) Molded DIP Commercial

CY62256L−70PC P15

CY62256LL−70PC P15

CY62256LL−70ZRI ZR28 28-lead Reverse Thin Small Outline Package Industrial

CY62256

Document #: 38-05248 Rev. *B Page 9 of 11

Package Diagrams

51-85017-A

28-lead (600-mil)Molded DIP P15

51-85092-*B

28-lead (300-mil) SNC (Narrow Body) SN28

CY62256

Document #: 38-05248 Rev. *B Page 10 of 11

of any circuitry other than circuitry embodied in a Cypress Semiconductor product. Nordoes it convey or implyany license underpatent or otherrights. Cypress Semiconductor does not authorize

its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress

Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges.

All product and company names mentioned in this document are the trademarks of their respective holders.

Package Diagrams (continued)

28-lead Thin Small Outline Package Type 1 (8 x 13.4 mm) Z28

51-85071-*G

51-85074-*F

28-lead Reverse Type 1 Thin Small Outline Package (8 x 13.4 mm) ZR28

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