NXP Semiconductors PBLS4004D Manuale operativo

1. Product proﬁle

1.1 General description

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN Resistor-

Equipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD)

plastic package.

1.2 Features

nLow VCEsat (BISS) and resistor-equipped transistor in one package

nLow threshold voltage (< 1 V) compared to MOSFET

nLow drive power required

nSpace-saving solution

nReduction of component count

1.3 Applications

nSupply line switches

nBattery charger switches

nHigh-side switches for LEDs, drivers and backlights

nPortable equipment

1.4 Quick reference data

[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.

[2] Pulse test: tp≤300 µs; δ≤0.02.

PBLS4004D

40 V PNP BISS loadswitch

Rev. 03 — 6 January 2009 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

TR1; PNP low VCEsat transistor

VCEO collector-emitter voltage open base - - −40 V

ICcollector current [1] --−1A

RCEsat collector-emitter saturation

resistance IC=−500 mA;

IB=−50 mA [2] - 240 340 mΩ

TR2; NPN resistor-equipped transistor

VCEO collector-emitter voltage open base - - 50 V

IOoutput current - - 100 mA

R1 bias resistor 1 (input) 15.4 22 28.6 kΩ

R2/R1 bias resistor ratio 0.8 1 1.2

Product data sheet Rev. 03 — 6 January 2009 2 of 15

NXP Semiconductors PBLS4004D

40 V PNP BISS loadswitch

2. Pinning information

3. Ordering information

4. Marking

5. Limiting values

Table 2. Pinning

Pin Description Simpliﬁed outline Graphic symbol

1 emitter TR1

2 base TR1

3 output (collector) TR2

4 GND (emitter) TR2

5 input (base) TR2

6 collector TR1

132

56 65 4

123

TR1 TR2

sym036

Table 3. Ordering information

Type number Package

Name Description Version

PBLS4004D SC-74 plastic surface-mounted package (TSOP6); 6 leads SOT457

Table 4. Marking codes

Type number Marking code

PBLS4004D R4

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

TR1; PNP low VCEsat transistor

VCBO collector-base voltage open emitter - −40 V

VCEO collector-emitter voltage open base - −40 V

VEBO emitter-base voltage open collector - −5V

ICcollector current [1] -−0.7 A

[2] -−0.85 A

[3] -−1A

ICM peak collector current single pulse; tp≤1ms - −2A

IBbase current - −0.3 A

IBM peak base current single pulse; tp≤1ms - −1A

Product data sheet Rev. 03 — 6 January 2009 3 of 15

NXP Semiconductors PBLS4004D

40 V PNP BISS loadswitch

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.

[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.

Ptot total power dissipation Tamb ≤25 °C[1] - 250 mW

[2] - 350 mW

[3] - 400 mW

TR2; NPN resistor-equipped transistor

VCBO collector-base voltage open emitter - 50 V

VCEO collector-emitter voltage open base - 50 V

VEBO emitter-base voltage open collector - 10 V

VIinput voltage

positive - +40 V

negative - −10 V

IOoutput current - 100 mA

ICM peak collector current single pulse; tp≤1 ms - 100 mA

Ptot total power dissipation Tamb ≤25 °C - 200 mW

Per device

Ptot total power dissipation Tamb ≤25 °C[1] - 400 mW

[2] - 530 mW

[3] - 600 mW

Tjjunction temperature - 150 °C

Tamb ambient temperature −65 +150 °C

Tstg storage temperature −65 +150 °C

Table 5. Limiting values

…continued

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Product data sheet Rev. 03 — 6 January 2009 4 of 15

NXP Semiconductors PBLS4004D

40 V PNP BISS loadswitch

6. Thermal characteristics

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.

[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.

(1) Ceramic PCB, Al2O3, standard footprint

(2) FR4 PCB, mounting pad for collector 1 cm2

(3) FR4 PCB, standard footprint

Fig 1. Power derating curves

Tamb (°C)

0 16012040 80

006aaa461

0.4

0.2

0.6

0.8

Ptot

(W)

(1)

(2)

(3)

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Per device

Rth(j-a) thermal resistance from

junction to ambient in free air [1] - - 312 K/W

[2] - - 236 K/W

[3] - - 210 K/W

Per TR1; PNP low VCEsat transistor

Rth(j-sp) thermal resistance from

junction to solder point - - 105 K/W

Product data sheet Rev. 03 — 6 January 2009 5 of 15

NXP Semiconductors PBLS4004D

40 V PNP BISS loadswitch

FR4 PCB, standard footprint

Fig 2. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse duration; typical

values

FR4 PCB, mounting pad for collector 1 cm2

Fig 3. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse duration; typical

values

006aaa462

102

103

Zth(j-a)

(K/W)

10−1

10−51010−2

10−4102

10−1tp(s)

10−3103

0.75

0.5

0.33

0.2

0.1

δ= 1

0.05

0.02

0.01

006aaa463

102

103

Zth(j-a)

(K/W)

10−51010−2

10−4102

10−1tp(s)

10−3103

0.75

0.5

0.33

0.2

0.1

δ= 1

0.05

0.02

0.01

Product data sheet Rev. 03 — 6 January 2009 6 of 15

NXP Semiconductors PBLS4004D

40 V PNP BISS loadswitch

7. Characteristics

Ceramic PCB, Al2O3, standard footprint

Fig 4. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse duration; typical

values

006aaa464

102

103

Zth(j-a)

(K/W)

10−51010−2

10−4102

10−1tp(s)

10−3103

0.75

0.5

0.33

0.2

0.1

δ= 1

0.05

0.02

0.01

Table 7. Characteristics

amb

=25

C unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

TR1; PNP low VCEsat transistor

ICBO collector-base cut-off

current VCB =−40 V; IE=0A - - −0.1 µA

VCB =−40 V; IE=0A;

Tj= 150 °C-- −50 µA

ICES collector-emitter

cut-off current VCE =−30 V; VBE =0V - - −0.1 µA

IEBO emitter-base cut-off

current VEB =−5 V; IC=0A - - −0.1 µA

hFE DC current gain VCE =−5 V; IC=−1 mA 300 - -

VCE =−5 V; IC=−100 mA [1] 300 - 800

VCE =−5 V; IC=−500 mA [1] 215 - -

VCE =−5 V; IC=−1A [1] 150 - -

VCEsat collector-emitter

saturation voltage IC=−100 mA; IB=−1mA - −80 −140 mV

IC=−500 mA; IB=−50 mA [1] -−120 −170 mV

IC=−1 A; IB=−100 mA [1] -−220 −310 mV

RCEsat collector-emitter

saturation resistance IC=−500 mA; IB=−50 mA [1] - 240 340 mΩ

VBEsat base-emitter

saturation voltage IC=−1 A; IB=−50 mA [1] -- −1.1 V

VBEon base-emitter

turn-on voltage VCE =−5 V; IC=−1A [1] -- −1V

Product data sheet Rev. 03 — 6 January 2009 7 of 15

NXP Semiconductors PBLS4004D

40 V PNP BISS loadswitch

[1] Pulse test: tp≤300 µs; δ≤0.02.

fTtransition frequency IC=−50 mA; VCE =−10 V;

f = 100 MHz 150 - - MHz

Cccollector capacitance VCB =−10 V; IE=i

e=0A;

f=1MHz - - 12 pF

TR2; NPN resistor-equipped transistor

ICBO collector-base cut-off

current VCB =50V;I

E= 0 A - - 100 nA

ICEO collector-emitter

cut-off current VCE =30V;I

B=0A - - 1 µA

VCE =30V;I

B=0A;

Tj= 150 °C-- 50µA

IEBO emitter-base cut-off

current VEB =5V;I

C= 0 A - - 180 µA

hFE DC current gain VCE =5V;I

C= 5 mA 60 - -

VCEsat collector-emitter

saturation voltage IC= 10 mA; IB= 0.5 mA - - 150 mV

VI(off) off-state input voltage VCE =5V;I

C= 100 µA - 1.1 0.8 V

VI(on) on-state input voltage VCE = 0.3 V; IC= 5 mA 2.5 1.7 - V

R1 bias resistor 1 (input) 15.4 22 28.6 kΩ

R2/R1 bias resistor ratio 0.8 1 1.2

Cccollector capacitance VCB =10V;I

E=i

e=0A;

f=1MHz - - 2.5 pF

Table 7. Characteristics

…continued

amb

=25

C unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

Product data sheet Rev. 03 — 6 January 2009 8 of 15

NXP Semiconductors PBLS4004D

40 V PNP BISS loadswitch

VCE =−5V

(1) Tamb = 100 °C

(2) Tamb =25°C

(3) Tamb =−55 °C

Tamb =25°C

Fig 5. TR1 (PNP): DC current gain as a function of

collector current; typical values Fig 6. TR1 (PNP): Collector current as a function of

collector-emitter voltage; typical values

VCE =−5V

(1) Tamb =−55 °C

(2) Tamb =25°C

(3) Tamb = 100 °C

IC/IB=20

(1) Tamb =−55 °C

(2) Tamb =25°C

(3) Tamb = 100 °C

Fig 7. TR1 (PNP): Base-emitter voltage as a function

of collector current; typical values Fig 8. TR1 (PNP): Base-emitter saturation voltage as

a function of collector current; typical values

006aaa465

400

800

1200

hFE

IC(mA)

−10−1−104

−103

−1−102

−10

(2)

(3)

(1)

006aaa469

−0.8

−1.6

−2.4

(A)

VCE (V)

0−5−4−2−3−1

IB(mA) = −24

−2.4

−4.8

−7.2

−12

−14.4

−9.6

−16.8

−19.2

−21.6

006aaa467

−0.6

−0.4

−0.8

−1.0

VBE

(V)

−0.2

IC(mA)

−10−1−104

−103

−1−102

−10

(3)

(1)

(2)

006aaa468

−0.5

−0.9

−1.3

VBEsat

(V)

−0.1

IC(mA)

−10−1−104

−103

−1−102

−10

(2)

(3)

(1)

Product data sheet Rev. 03 — 6 January 2009 9 of 15

NXP Semiconductors PBLS4004D

40 V PNP BISS loadswitch

IC/IB=20

(1) Tamb = 100 °C

(2) Tamb =25°C

(3) Tamb =−55 °C

Tamb =25°C

(1) IC/IB= 100

(2) IC/IB=50

(3) IC/IB=10

Fig 9. TR1 (PNP): Collector-emitter saturation

voltage as a function of collector current;

typical values

Fig 10. TR1 (PNP): Collector-emitter saturation

voltage as a function of collector current;

typical values

IC/IB=20

(1) Tamb = 100 °C

(2) Tamb =25°C

(3) Tamb =−55 °C

Tamb =25°C

(1) IC/IB= 100

(2) IC/IB=50

(3) IC/IB=10

Fig 11. TR1 (PNP): Collector-emitter saturation

resistance as a function of collector current;

typical values

Fig 12. TR1 (PNP): Collector-emitter saturation

resistance as a function of collector current;

typical values

006aaa466

IC(mA)

−10−1−104

−103

−1−102

−10

−10−1

−1

VCEsat

(V)

−10−2(3)

(1)

(2)

006aaa471

IC(mA)

−10−1−104

−103

−1−102

−10

−10−2

−10−1

−1

−10

VCEsat

(V)

−10−3

(3)

(2)

(1)

006aaa470

IC(mA)

−10−1−104

−103

−1−102

−10

102

103

RCEsat

(Ω)

10−1

(3)

(1)

(2)

006aaa472

IC(mA)

−10−1−104

−103

−1−102

−10

102

103

RCEsat

(Ω)

10−1

(3)

(2)

(1)

Product data sheet Rev. 03 — 6 January 2009 10 of 15

NXP Semiconductors PBLS4004D

40 V PNP BISS loadswitch

VCE =5V

(1) Tamb = 150 °C

(2) Tamb =25°C

(3) Tamb =−40 °C

IC/IB=20

(1) Tamb = 100 °C

(2) Tamb =25°C

(3) Tamb =−40 °C

Fig 13. TR2 (NPN): DC current gain as a function of

collector current; typical values Fig 14. TR2 (NPN): Collector-emitter saturation

voltage as a function of collector current;

typical values

VCE = 0.3 V

(1) Tamb =−40 °C

(2) Tamb =25°C

(3) Tamb = 100 °C

VCE =5V

(1) Tamb =−40 °C

(2) Tamb =25°C

(3) Tamb = 100 °C

Fig 15. TR2 (NPN): On-state input voltage as a

function of collector current; typical values Fig 16. TR2 (NPN): Off-state input voltage as a

function of collector current; typical values

IC(mA)

10−1102

101

006aaa038

102

103

hFE

(1)

(2)

(3)

006aaa039

IC(mA)

110

10−1

VCEsat

(V)

10−2

(1)

(2)

(3)

006aaa040

IC(mA)

10−1102

101

VI(on)

(V)

10−1

(1)

(2)

(3)

006aaa041

IC(mA)

10−2101

110−1

VI(off)

(V)

10−1

(1)

(3)

(2)

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