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TIP122FP

TIP127FP

COMPLEMENTARY SILICON POWER

DARLINGTON TRANSISTORS

■STMicroelectronics PREFERRED

SALESTYPES

■FULLY INSULATED PACKAGE (U.L.

COMPLIANT) FOR EASY MOUNTING

DESCRIPTION

The TIP122FP is a silicon Epitaxial-Base NPN

power transistor in monolithic Darlington

configuration mounted in Jedec TO-220FP fully

molded isolated package. It is intented for use in

power linear and switching applications.

The complementary PNP type is TIP127FP.

INTERNAL SCHEMATIC DIAGRAM

March 2003

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

NPN TIP122FP

PNP TIP127FP

VCBO Collector-Base Voltage (IE= 0) 100 V

VCEO Collector-Emitter Voltage (IB= 0) 100 V

VEBO Emitter-Base Voltage (IC= 0) 5 V

ICCollector Current 5 A

ICM Collector Peak Current (tp< 5 ms) 8 A

IBBase Current 0.1 A

Ptot Total Dissipation at Tcase ≤ 25 oC

Tamb ≤ 25 oC29

Visol Insulation Withstand Voltage (RMS) from All

Three Leads to External Heatsink 1500 V

Tstg Storage Temperature -65 to 150 oC

TjMax. Operating Junction Temperature 150 oC

For PNP types voltage and current values are negative.

123

TO-220FP

R1Typ. = 5 KΩR2Typ. = 150 Ω

1/6

THERMAL DATA

Rthj-case

Rthj-amb Thermal Resistance Junction-case Max

Thermal Resistance Junction-ambient Max 4.3

62.5

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

ICEO Collector Cut-off

Current (IB= 0) VCE = 50 V 0.5 mA

ICBO Collector Cut-off

Current (IE= 0) VCB = 100 V 0.2 mA

IEBO Emitter Cut-off Current

(IC= 0) VEB = 5 V 2 mA

VCEO(sus)* Collector-Emitter

Sustaining Voltage

(IB= 0)

IC= 30 mA 100 V

VCE(sat)* Collector-Emitter

Saturation Voltage IC= 3 A IB= 12 mA

IC= 5 A IB= 20 mA 2

VBE(on)* Base-Emitter Voltage IC= 3 A VCE = 3 V 2.5 V

hFE* DC Current Gain IC= 0.5 A VCE = 3 V

IC= 3 A VCE = 3 V 1000

1000

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

For PNP types voltage and current values are negative.

Safe Operating Area Derating Curve

TIP122FP / TIP127FP

2/6

DC Current Gain (NPN type)

Collector Emitter Saturation Voltage (NPN type)

Base Emitter Saturation Voltage (NPN type)

DC Current Gain (PNP type)

Collector Emitter Saturation Voltage (PNP type)

Base Emitter Saturation Voltage (PNP type)

TIP122FP / TIP127FP

3/6

Base Emitter On Voltage (NPN type)

Freewheel Diode Forward Voltage (NPN type)

Base Emitter On Voltage (PNP type)

Freewheel Diode Forward Voltage (PNP type)

Switching Time Resistive Load (NPN type) Switching Time resistive Load (PNP type)

TIP122FP / TIP127FP

4/6

DIM. mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181

B 2.5 2.7 0.098 0.106

D 2.5 2.75 0.098 0.108

E 0.45 0.7 0.017 0.027

F 0.75 1 0.030 0.039

F1 1.15 1.7 0.045 0.067

F2 1.15 1.7 0.045 0.067

G 4.95 5.2 0.195 0.204

G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409

L2 16 0.630

L3 28.6 30.6 1.126 1.204

L4 9.8 10.6 0.385 0.417

L6 15.9 16.4 0.626 0.645

L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

123

TO-220FP MECHANICAL DATA

TIP122FP / TIP127FP

5/6

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences

of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is

granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are

subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products

are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

The ST logo is a trademark of STMicroelectronics

STMicroelectronics GROUP OF COMPANIES

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Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.

http://www.st.com

TIP122FP / TIP127FP

6/6

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