Toshiba TPCS8209 Manuale utente

TPCS8209

2002-01-17

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)

TPCS8209

Lithium Ion Battery Applications

Notebook PC Applications

Portable Machines and Tools

• Small footprint due to small and thin package

• Low drain-source ON resistance: RDS (ON) = 19 mΩ(typ.)

• High forward transfer admittance: |Yfs| = 9.2 S (typ.)

• Low leakage current: IDSS = 10 µA (max) (VDS = 20 V)

• Enhancement-mode: Vth = 0.5~1.2 V (VDS = 10 V, ID= 200 µA)

Maximum Ratings (Ta =

=25°C)

Characteristics Symbol Rating Unit

Drain-source voltage VDSS 20 V

Drain-gate voltage (RGS =20 kΩ) VDGR 20 V

Gate-source voltage VGSS ±12 V

DC (Note 1) ID5

Drain current

Pulse (Note 1) IDP 20

Single-device

operation (Note 3a) PD (1) 1.1

Drain power

dissipation

(t =10 s)

(Note 2a)

Single-device value

at dual operation

(Note 3b)

PD (2) 0.75

Single-device

operation (Note 3a) PD (1) 0.6

Drain power

dissipation

(t =10 s)

(Note 2b)

Single-device value

at dual operation

(Note 3b)

PD (2) 0.35

Single pulse avalanche energy

(Note 4)

EAS 32.5 mJ

Avalanche current IAR 5 A

Repetitive avalanche energy

Single-device value at dual operation

(Note 2a, 3b, 5)

EAR 0.075 mJ

Channel temperature Tch 150 °C

Storage temperature range Tstg −55~150 °C

Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) Please see next page.

This transistor is an electrostatic sensitive device. Please handle with caution.

Unit: mm

JEDEC ―

JEITA ―

TOSHIBA 2-3R1E

Weight: 0.035 g (typ.)

Circuit Configuration

8 7 6 5

1 2 3 4

查询TPCS8209供应商

TPCS8209

2002-01-17

Thermal Characteristics

Characteristics Symbol Max Unit

Single-device operation

(Note 3a) Rth (ch-a) (1) 114

Thermal resistance, channel to ambient

(t =10 s) (Note 2a) Single-device value at

dual operation

(Note 3b)

Rth (ch-a) (2) 167

°C/W

Single-device operation

(Note 3a) Rth (ch-a) (1) 208

Thermal resistance, channel to ambient

(t =10 s) (Note 2b) Single-device value at

dual operation

(Note 3b)

Rth (ch-a) (2) 357

°C/W

Marking (Note 6)

Note 1: Please use devices on condition that the channel temperature is below 150°C.

Note 2:

a) Device mounted on a glass-epoxy board (a) b) Device mounted on a glass-epoxy board (b)

(a) (b)

Note 3:

a) The power dissipation and thermal resistance values are shown for a single device

(During single-device operation, power is only applied to one device.).

b) The power dissipation and thermal resistance values are shown for a single device

(During dual operation, power is evenly applied to both devices.).

Note 4: VDD =16 V, Tch =25°C (initial), L =1.0 mH, RG=25 Ω, IAR =5 A

Note 5: Repetitive rating; pulse width limited by max channel temperature.

Note 6: ○on lower right of the marking indicates Pin 1.

*shows lot number. (year of manufacture: last decimal digit of the year of manufacture, month of

manufacture: January to December are denoted by letters A to L respectively)

※

Type

S8209

FR-4

25.4 ×25.4 ×0.8

(Unit: mm)

FR-4

25.4 ×25.4 ×0.8

(Unit: mm)

TPCS8209

2002-01-17

Electrical Characteristics (Ta =

=25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current IGSS V

GS =±10 V, VDS =0 V ±10 µA

Drain cut-OFF current IDSS V

DS =20 V, VGS =0 V 10 µA

V(BR) DSS I

D=10 mA, VGS =0 V 20 

Drain-source breakdown voltage

V(BR) DSX I

D=10 mA, VGS =−12 V 8 

Gate threshold voltage Vth V

DS =10 V, ID=200 µA 0.5 1.2 V

VGS =2.0 V, ID=3.5 A 34 60

VGS =2.5 V, ID=3.5 A 26 40

Drain-source ON resistance RDS (ON)

VGS =4.0 V, ID=4.0 A 19 30

mΩ

Forward transfer admittance |Yfs| VDS =10 V, ID=2.5 A 4.6 9.2 S

Input capacitance Ciss 1280 

Reverse transfer capacitance Crss 130 

Output capacitance Coss

VDS =10 V, VGS =0 V, f =1 MHz

150 

Rise time tr4.5 

Turn-ON time ton 11 

Fall time tf7.3 

Switching time

Turn-OFF time toff

Duty

=1%, tw=10 µs 33 

Total gate charge

(gate-source plus gate-drain) Qg15 

Gate-source charge 1 Qgs1 3.3 

Gate-drain (“miller”) charge Qgd

VDD ∼

−16 V, VGS =5 V, ID=5 A

3.5 

Source-Drain Ratings and Characteristics (Ta =

=25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Drain reverse current Pulse (Note 1) IDRP   20 A

Forward voltage (diode) VDSF I

DR =5 A, VGS =0 V −1.2 V

RL=4 Ω

VDD ∼

−10 V

0 V

VGS 5 V

4.7 Ω

ID=2.5 A

VOUT

TPCS8209

2002-01-17

ID– VDS

ID– VGS

VDS – VGS

|Yfs| – ID

RDS (ON) – ID

Common source

Ta =25°C

Pulse test

0 0.4 0.8 1.2 1.6 2.0

VGS =1.4 V

1.5

1.6

1.7

1.8

4 3

1.9

Forward transfer admittance Yfs(S)

Drain-source voltage VDS (V)

Drain current ID(A)

Drain-source voltage VDS (V)

Drain current ID(A)

Gate-source voltage VGS (V)

Drain current ID(A)

Gate-source voltage VGS (V)

Drain current ID(A) Drain current ID(A)

Drain-source ON resistance

RDS (ON) (mΩ)

0 1 2 3 4 5

Common source

VDS =10 V

Pulse test

Ta =−55°C

25100

Common source

Ta =25°C

Pulse test

0 2 4 6 8 10

0.4

0.8

1.2

1.6

ID=10 A

2.5

1.25

0.1 1 10

100

Common source

VDS =10 V

Pulse test

Ta =−55°C

100

0.1 1 10

100

Common source

Ta =25°C

Pulse test

VGS =2 V

2.5

VGS =1.4 V

1.6

1.7

1.92

0 1 2 3

Common source

Ta =25°C

Pulse test

1.8

1.5

4 5

TPCS8209

2002-01-17

RDS (ON) – Ta

IDR – VDS

Capacitance – VDS

Vth – Ta

PD– Ta

Dynamic input/output characteristics

−100 −50 0 15010050

0.2

0.4

0.6

0.8

1.2

1.4

Common source

VDS =10 V

ID=200 µA

Pulse test

Common source

Pulse test

−50

0 50 150100

ID=5 A

2.5

1.25

ID=5, 2.5, 1.25 A

VGS =4.0 V

VGS =2.5 V

VGS =2.0 V

0.1

100

1000

10000

1 10 100

Ciss

Coss

Crss

Common source

Ta =25°C

f =1MHz

VGS =0 V

Drain power dissipation PD(W)

Gate threshold voltage Vth (V)

Ambient temperature Ta (°C)

Drain-source ON resistance

RDS (ON) (mΩ)

Drain-source voltage VDS (V)

Capacitance C (pF)

Ambient temperature Ta (°C)

Drain-source voltage VDS (V)

Gate-source voltage VGS (V)

Total gate charge Qg(nC)

Drain reverse current IDR (A)

0.2

0.4

0.6

0.8

1.2

50 100 200150

(1)

(4)

(3)

(2)

Device mounted on a glass-epoxy board (a)

(Note 2a)

(1) Single-device operation (Note 3a)

(2) Single-device value at dual operation (Note 3b)

Device mounted on a glass-epoxy board (b)

(Note 2b)

(3) Single-device operation (Note 3a)

(4) Single-device value at dual

operation (Note 3b)

t = 10 s

4 8 12 16 20 24 28 32

VDS =16 V

Common source

ID=5 A

Ta =25°C

Pulse test

VGS

0.1

0 −0.2 −0.4 −0.6 −0.8 −1

0.3

0.5

VGS =0 V

Common source

Ta =25°C

Pulse test

124

TPCS8209

2002-01-17

Drain-source voltage VDS (V)

Drain current ID(A)

Safe operating area

Pulse width tw(S)

rth −tw

Normalized transient thermal impedance

rth (°C/W)

0.1

0.001 0.01 0.1 1 10 100 1000

0.3

0.5

100

300

1000 Device mounted on a glass-epoxy board (a) (Note 2a)

(1) Single-device operation (Note 3a)

(2) Single-device value at dual operation (Note 3b)

Device mounted on a glass-epoxy board (b) (Note 2b)

(3) Single-device operation (Note 3a)

(4) Single-device value at dual operation (Note 3b) (1)

500

(2)

(3)

(4)

Single pulse

0.01

0.01 0.03 0.1 0.3 1 3 10 10030

0.03

0.05

0.1

0.3

0.5

100

*Single pulse Ta =25°C

Curves must be derated linearly

with increase in temperature.

IDmax (pulse) *

1 ms *

VDSS max

Single-device value at dual

operation (Note 3b)

10 ms *

TPCS8209

2002-01-17

• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor

devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical

stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of

safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of

such TOSHIBA products could cause loss of human life, bodily injury or damage to property.

In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as

set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and

conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability

Handbook” etc..

• The TOSHIBA products listed in this document are intended for usage in general electronics applications

(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,

etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires

extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or

bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or

spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,

medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this

document shall be made at the customer’s own risk.

• The information contained herein is presented only as a guide for the applications of our products. No

responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other

rights of the third parties which may result from its use. No license is granted by implication or otherwise under

any intellectual property or other rights of TOSHIBA CORPORATION or others.

• The information contained herein is subject to change without notice.

000707EA

RESTRICTIONS ON PRODUCT USE

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