Cypress Semiconductor CY62147DV30 Manuale utente

4-Mbit (256K x 16) Static RAM

CY62147DV30

Cypress Semiconductor Corporation • 198ChampionCourt • San Jose,CA 95134-1709 • 408-943-2600

Document #: 38-05340 Rev. *F Revised August 31, 2006

Features

• Temperature Ranges

—Industrial: –40°C to +85°C

— Automotive-A: –40°C to +85°C

— Automotive-E: –40°C to +125°C

• Very high speed: 45 ns

• Wide voltage range: 2.20V–3.60V

• Pin-compatiblewithCY62147CV25,CY62147CV30,and

CY62147CV33

• Ultra-low active power

— Typical active current: 1.5 mA @ f = 1 MHz

— Typical active current: 8 mA @ f = fmax

• Ultra low standby power

• Easy memory expansion with CE, and OE features

• Automatic power-down when deselected

• CMOS for optimum speed/power

• AvailableinPb-freeandnonPb-free 48-ballVFBGAand

non Pb-free 44-pin TSOPII

• Byte power-down feature

Functional Description[1]

The CY62147DV30 is a high-performance CMOS static RAM

organized as 256K words by 16 bits. This device features ad-

vanced circuit design to provide ultra-low active current. This

is ideal for providing More Battery Life™ (MoBL®) in portable

applications such as cellular telephones. The device also has

an automatic power-down feature that significantly reduces

power consumption. The device can also be put into standby

mode reducing power consumption by more than 99% when

deselected (CE HIGH or both BLE and BHE are HIGH). The

input/output pins (I/O0through I/O15) are placed in a high-im-

pedance state when: deselected (CE HIGH), outputs are dis-

abled(OEHIGH),both ByteHigh Enableand ByteLow Enable

aredisabled(BHE,BLEHIGH), orduring awriteoperation(CE

LOW and WE LOW).

Writing to the device is accomplished by taking Chip Enable

(CE) and Write Enable (WE) inputs LOW. If Byte Low Enable

(BLE) is LOW, then data from I/O pins (I/O0through I/O7), is

written into the location specified on the address pins (A0

through A17). If Byte High Enable (BHE) is LOW, then data

from I/O pins (I/O8through I/O15) is written into the location

specified on the address pins (A0through A17).

Reading from the device is accomplished by taking Chip

Enable (CE) and Output Enable (OE) LOW while forcing the

Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW,

then data from the memory location specified by the address

pins will appear on I/O0to I/O7. If Byte High Enable (BHE) is

LOW, then data from memory will appear on I/O8to I/O15. See

the truth table at the back of this data sheet for a complete

description of read and write modes.

The CY62147DV30 is available in a 48-ball VFBGA, 44 Pin

TSOPII packages.

Note:

1. For best practice recommendations, please refer to the Cypress application note “System Design Guidelines” on http://www.cypress.com.

Logic Block Diagram

256K x 16

RAM Array I/O0–I/O7

ROW DECODER

COLUMN DECODER

A11

A12

A13

A14

A15

SENSE AMPS

DATA IN DRIVERS

A3I/O8–I/O15

BLE

BHE

A16

A17

Power -Down

Circuit BHE

BLE

A10

[+] Feedback

CY62147DV30

Document #: 38-05340 Rev. *F Page 2 of 12

Notes:

2. NC pins are not internally connected on the die.

3. DNU pins have to be left floating or tied to VSS to ensure proper application.

4. Pins H1, G2, and H6 in the VFBGA package are address expansion pins for 8 Mb, 16 Mb, and 32 Mb, respectively.

5. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ.), TA= 25°C.

Pin Configuration[2, 3, 4]

VFBGA (Top View) 44 TSOP II (Top View)

A11

A10

A3CE

I/O10

I/O8

I/O9

I/O11

I/O13

I/O12

I/O14

I/O15

VSS

Vss

I/O0

BHE

A17

BLE

VCC

I/O2

I/O1

I/O3

I/O4

I/O5I/O6

I/O7

A15

A14

A13

A12

NC NC

A16

DNU

Vcc

14 31

15 29

VCC

A17

A16

A15

A14

VSS

I/O15

I/O2

I/O0

I/O1

BHE

I/O3

21 23

VSS

I/O6

I/O4

I/O5

I/O7

BLE

VCC

I/O14

I/O13

I/O12

I/O11

I/O10

I/O9

I/O8

A10

A11

A13 A12

Product Portfolio

Product VCC Range (V) Speed

(ns)

Power Dissipation

Operating ICC (mA) Standby ISB2

(µA)Range f = 1MHz f = fmax

Min. Typ.[5] Max. Typ.[5] Max. Typ.[5] Max. Typ.[5] Max.

CY62147DV30LL Industrial 2.2V 3.0 3.6 45 1.5 3 10 20 2 8

CY62147DV30LL Industrial 2.2V 3.0 3.6 55 1.5 3 8 15 2 8

CY62147DV30L Auto-E 25

CY62147DV30LL Industrial 2.2V 3.0 3.6 70 1.5 3 8 15 2 8

CY62147DV30LL Auto-A 8

[+] Feedback

CY62147DV30

Document #: 38-05340 Rev. *F Page 3 of 12

Maximum Ratings

(Above which the useful life may be impaired. For user guide-

lines, not tested.)

Storage Temperature .................................–65°C to +150°C

Ambient Temperature with

Power Applied.............................................–55°C to +125°C

Supply Voltage to Ground

Potential......................................–0.3V to + VCC(MAX) + 0.3V

DC Voltage Applied to Outputs

in High-Z State[6,7]..........................–0.3V to VCC(MAX) + 0.3V

DC Input Voltage[6,7] ..................... –0.3V to VCC(MAX) + 0.3V

Output Current into Outputs (LOW).............................20 mA

Static Discharge Voltage........................................... >2001V

(per MIL-STD-883, Method 3015)

Latch-up Current......................................................>200 mA

Operating Range

Device Range

Ambient

Temperature

[TA][9] VCC

CY62147DV30L Automotive-E –40°Cto+125°C 2.20V

3.60V

CY62147DV30LL Industrial –40°C to +85°C

Automotive-A –40°C to +85°C

Electrical Characteristics (Over the Operating Range)

Parameter Description Test Conditions

–45 –55/–70

UnitMin. Typ.[5] Max. Min. Typ.[5] Max.

VOH Output HIGH

Voltage IOH = –0.1 mA VCC = 2.20V 2.0 2.0 V

IOH = –1.0 mA VCC = 2.70V 2.4 2.4 V

VOL Output LOW

Voltage IOL = 0.1 mA VCC = 2.20V 0.4 0.4 V

IOL = 2.1 mA VCC = 2.70V 0.4 0.4 V

VIH Input HIGH

Voltage VCC = 2.2V to 2.7V 1.8 VCC + 0.3V 1.8 VCC + 0.3V V

VCC= 2.7V to 3.6V 2.2 VCC + 0.3V 2.2 VCC + 0.3V V

VIL Input LOW

Voltage VCC = 2.2V to 2.7V –0.3 0.6 –0.3 0.6 V

VCC= 2.7V to 3.6V –0.3 0.8 –0.3 0.8 V

IIX InputLeakage

Current GND <VI< VCC Ind’l –1 +1 –1 +1 µA

Auto-A[9] –1 +1 µA

Auto-E[9] –4 +4 µA

IOZ Output

Leakage

Current

GND <VO <VCC,

Output Disabled Ind’l –1 +1 –1 +1 µA

Auto-A[9] –1 +1 µA

Auto-E[9] –4 +4 µA

ICC VCCOperating

Supply

Current

f = fMAX = 1/tRC VCC = VCCmax

IOUT = 0 mA

CMOS levels

10 20 8 15 mA

f = 1 MHz 1.5 3 1.5 3 mA

ISB1 Automatic CE

Power-Down

Current —

CMOS Inputs

CE > VCC−0.2V,

VIN>VCC–0.2V,VIN<0.2V)

f = fMAX (Address and

Data Only),

f = 0 (OE, WE, BHE and

BLE), VCC = 3.60V

Ind’l LL 8 8 µA

Auto-A[9] LL 8

Auto-E[9] L25

ISB2 Automatic CE

Power-Down

Current —

CMOS Inputs

CE > VCC – 0.2V,

VIN > VCC – 0.2V or

VIN < 0.2V,

f = 0, VCC = 3.60V

Ind’l LL 8 8 µA

Auto-A[9] LL 8

Auto-E[9] L25

Notes:

6. VIL(min.) = –2.0V for pulse durations less than 20 ns.

7. VIH(max.) = VCC + 0.75V for pulse durations less than 20 ns.

8. Full device AC operation assumes a 100-µs ramp time from 0 to VCC(min) and 200-µs wait time after VCC stabilization.

9. Auto-A is available in –70 and Auto-E is available in –55.

[+] Feedback

CY62147DV30

Document #: 38-05340 Rev. *F Page 4 of 12

Notes:

10.Tested initially and after any design or process changes that may affect these parameters.

11.Test condition for the 45-ns part is a load capacitance of 30 pF.

12.Full device operation requires linear VCC ramp from VDR to VCC(min.) >100 µs or stable at VCC(min.) >100 µs.

13.BHE.BLE is the AND of both BHE and BLE. Chip can be deselected by either disabling the chip enable signals or by disabling both BHE and BLE.

Capacitance (for all packages)[10]

Parameter Description Test Conditions Max. Unit

CIN Input Capacitance TA= 25°C, f = 1 MHz,

VCC = VCC(typ) 10 pF

COUT Output Capacitance 10 pF

Thermal Resistance[10]

Parameter Description Test Conditions VFBGA TSOP II Unit

ΘJA Thermal Resistance

(Junction to Ambient) Still Air, soldered on a 3 × 4.5 inch, four-layer

printed circuit board 72 75.13 °C/W

ΘJC Thermal Resistance

(Junction to Case) 8.86 8.95 °C/W

AC Test Loads and Waveforms[10]

Parameters 2.50V 3.0V Unit

R1 16667 1103 Ω

R2 15385 1554 Ω

RTH 8000 645 Ω

VTH 1.20 1.75 V

Data Retention Characteristics (Over the Operating Range)

Parameter Description Conditions Min. Typ.[5] Max. Unit

VDR VCC for Data Retention 1.5 V

ICCDR Data Retention Current VCC= 1.5V

CE > VCC – 0.2V,

VIN > VCC – 0.2V or

VIN < 0.2V

L (Auto-E) 15 µA

LL (Ind’l/Auto-A) 6

tCDR[10] ChipDeselecttoDataRetention

Time 0ns

tR[12] Operation Recovery Time tRC ns

VCCVCC

OUTPUT

50 pF

INCLUDING

JIG AND

SCOPE

GND 90%

10% 90%

10%

Rise Time = 1 V/ns Fall Time = 1 V/ns

OUTPUT V

Equivalent to: THÉVENIN EQUIVALENT

ALL INPUT PULSES

RTH

Data Retention Waveform[13]

VCC(min)

tCDR

VDR >1.5 V

DATA RETENTION MODE

VCC

CE or

BHE.BLE

[+] Feedback

CY62147DV30

Document #: 38-05340 Rev. *F Page 5 of 12

Switching Characteristics Over the Operating Range[14]

Parameter Description

45 ns[11] 55 ns 70 ns

UnitMin. Max. Min. Max. Min. Max.

Read Cycle

tRC Read Cycle Time 45 55 70 ns

tAA Address to Data Valid 45 55 70 ns

tOHA Data Hold from Address Change 10 10 10 ns

tACE CE LOW to Data Valid 45 55 70 ns

tDOE OE LOW to Data Valid 25 25 35 ns

tLZOE OE LOW to LOW Z[15] 5 5 5 ns

tHZOE OE HIGH to High Z[15, 16] 15 20 25 ns

tLZCE CE LOW to Low Z[15] 10 10 10 ns

tHZCE CE HIGH to High Z[15, 16] 20 20 25 ns

tPU CE LOW to Power-Up 0 0 0 ns

tPD CE HIGH to Power-Down 45 55 70 ns

tDBE BLE/BHE LOW to Data Valid 45 55 70 ns

tLZBE BLE/BHE LOW to Low Z[15] 10 10 10 ns

tHZBE BLE/BHE HIGH to HIGH Z[15, 16] 15 20 25 ns

Write Cycle[17]

tWC Write Cycle Time 45 55 70 ns

tSCE CE LOW to Write End 40 40 60 ns

tAW Address Set-up to Write End 40 40 60 ns

tHA Address Hold from Write End 0 0 0 ns

tSA Address Set-up to Write Start 0 0 0 ns

tPWE WE Pulse Width 35 40 45 ns

tBW BLE/BHE LOW to Write End 40 40 60 ns

tSD Data Set-up to Write End 25 25 30 ns

tHD Data Hold from Write End 0 0 0 ns

tHZWE WE LOW to High-Z[15, 16] 15 20 25 ns

tLZWE WE HIGH to Low-Z[15] 10 10 10 ns

Notes:

14.Test conditions for all parameters other than tri-state parameters assume signal transition time of3 ns (1 V/ns) or less, timing reference levels of VCC(typ)/2, input

pulse levels of 0 to VCC(typ.), and output loading of the specified IOL/IOH as shown in the “AC Test Loads and Waveforms” section.

15.At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZBE is less than tLZBE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any

given device.

16.tHZOE, tHZCE, tHZBE, and tHZWE transitions are measured when the outputs enter a high impedence state.

17.The internal Write time of the memory is defined by the overlap of WE, CE = VIL, BHE and/or BLE = VIL. All signals must be ACTIVE to initiate a write and any

of these signals can terminate a write by going INACTIVE. The data input set-up and hold timing should be referenced to the edge of the signal that terminates

the write.

[+] Feedback

CY62147DV30

Document #: 38-05340 Rev. *F Page 6 of 12

Switching Waveforms

Read Cycle 1 (Address Transition Controlled)[18, 19]

Read Cycle No. 2 (OE Controlled)[19, 20]

Notes:

18.The device is continuously selected. OE, CE= VIL, BHE and/or BLE = VIL.

19.WE is HIGH for read cycle.

20.Address valid prior to or coincident with CEand BHE, BLE transition LOW.

ADDRESS

DATA OUT PREVIOUS DATA VALID DATA VALID

tRC

tAA

tOHA

50%

DATA VALID

ACE

LZBE

LZCE

DATA OUT HIGH IMPEDANCE IMPEDANCE

HZOE

HZCE

HIGH

SUPPLY

CURRENT

HZBE

BHE/BLE t

LZOE

ADDRESS

DBE

DOE

[+] Feedback

CY62147DV30

Document #: 38-05340 Rev. *F Page 7 of 12

Write Cycle No. 1 (WE Controlled)[17, 21, 22]

Write Cycle No. 2 (CE Controlled)[17, 21, 22]

Notes:

21.Data I/O is high impedance if OE = VIH.

22.If CE goes HIGH simultaneously with WE = VIH, the output remains in a high-impedance state.

23.During this period, the I/Os are in output state and input signals should not be applied.

Switching Waveforms (continued)

tHD

tSD

tPWE

tSA

tHA

tAW

tWC

DATA I/O

ADDRESS

tHZOE

DATAIN

NOTE23

BHE/BLE tBW

tSCE

tHD

tSD

tPWE

tHA

tAW

tSCE

tWC

tHZOE

DATAIN

ADDRESS

DATA I/O

NOTE 23

BHE/BLE tBW

tSA

[+] Feedback

CY62147DV30

Document #: 38-05340 Rev. *F Page 8 of 12

Write Cycle No. 3 (WE Controlled, OE LOW)[22]

Write Cycle No. 4 (BHE/BLE Controlled, OE LOW)[22]

Switching Waveforms (continued)

DATAIN

tHD

tSD

tLZWE

tPWE

tSA

tHA

tAW

tSCE

tWC

tHZWE

ADDRESS

DATAI/O NOTE 23

tBW

BHE/BLE

DATA I/O

ADDRESS

tWC

DATA

NOTE 23

BHE/BLE

tSCE

PWE

tHZWE tHD

tLZWE

[+] Feedback

CY62147DV30

Document #: 38-05340 Rev. *F Page 9 of 12

Truth Table

CE WE OE BHE BLE Inputs/Outputs Mode Power

H X X X X High Z Deselect/Power-Down Standby (ISB)

X X X H H High Z Deselect/Power-Down Standby (ISB)

L H L L L Data Out (I/OO–I/O15) Read Active (ICC)

L H L H L Data Out (I/OO–I/O7);

I/O8–I/O15 in High Z Read Active (ICC)

L H L L H Data Out (I/O8–I/O15);

I/O0–I/O7 in High Z Read Active (ICC)

L H H L L High Z Output Disabled Active (ICC)

L H H H L High Z Output Disabled Active (ICC)

L H H L H High Z Output Disabled Active (ICC)

L L X L L Data In (I/OO–I/O15) Write Active (ICC)

L L X H L Data In (I/OO–I/O7);

I/O8–I/O15 in High Z Write Active (ICC)

L L X L H Data In (I/O8–I/O15);

I/O0–I/O7 in High Z Write Active (ICC)

Ordering Information

Speed

(ns) Ordering Code Package

Diagram Package Type Operating

Range

45 CY62147DV30LL-45BVXI 51-85150 48-ball (6 mm × 8mm × 1 mm) VFBGA (Pb-free) Industrial

CY62147DV30LL-45ZSXI 51-85087 44-pin TSOP II (Pb-free)

55 CY62147DV30LL-55BVI 51-85150 48-ball (6 mm × 8mm × 1 mm) VFBGA Industrial

CY62147DV30LL-55BVXI 48-ball (6 mm × 8mm × 1 mm) VFBGA (Pb-free)

CY62147DV30LL-55ZSXI 51-85087 44-pin TSOP II (Pb-free)

CY62147DV30L-55BVXE 51-85150 48-ball (6 mm × 8mm × 1 mm) VFBGA (Pb-free) Automotive-E

CY62147DV30L-55ZSXE 51-85087 44-pin TSOP II (Pb-free)

70 CY62147DV30LL-70BVI 51-85150 48-ball (6 mm × 8mm × 1 mm) VFBGA Industrial

CY62147DV30LL-70BVXA 48-ball (6 mm × 8mm × 1 mm) VFBGA (Pb-free) Automotive-A

[+] Feedback

CY62147DV30

Document #: 38-05340 Rev. *F Page 10 of 12

Package Diagram

A1 CORNER

0.75

Ø0.30±0.05(48X)

Ø0.25 M C A B

Ø0.05 M C

0.15(4X)

0.21±0.05

1.00 MAX

SEATING PLANE

0.55 MAX.

0.25 C

0.10 C

A1 CORNER

TOP VIEW BOTTOM VIEW

234

3.75

5.25

465231

6.00±0.10

8.00±0.10

6.00±0.10

1.875

2.625

0.26 MAX.

48-ball VFBGA (6 x 8 x 1 mm) (51-85150)

51-85150-*D

[+] Feedback

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