Cypress AutoStore STK17TA8 Manuale utente

STK17TA8

128k X 8 AutoStore™ nvSRAM

with Real Time Clock

Cypress Semiconductor Corporation • 198 Champion Court • San Jose,CA 95134-1709 • 408-943-2600

Document #: 001-52039 Rev. ** Revised March 02, 2009

Features

■nvSRAM Combined with Integrated Real Time Clock Functions

(RTC, Watchdog Timer, Clock Alarm, Power Monitor)

■Capacitor or Battery Backup for RTC

■25, 45 ns Read Access and Read/Write Cycle Time

■Unlimited Read/Write Endurance

■Automatic nonvolatile STORE on Power Loss

■Nonvolatile STORE Under Hardware or Software Control

■Automatic RECALL to SRAM on Power Up

■Unlimited RECALL Cycles

■200K STORE Cycles

■20-Year nonvolatile Data Retention

■Single 3 V +20%, -10% Power Supply

■Commercial and Industrial Temperatures

■48-pin 300-mil SSOP Package (RoHS-Compliant)

Description

The Cypress STK17TA8 combines a 1 Mb nonvolatile static RAM

(nvSRAM) with a full featured real time clock in a reliable,

monolithic integrated circuit.

The 1 Mb nvSRAM is a fast static RAM with a nonvolatile

Quantum Trap storage element included with each memory cell.

The SRAM provides the fast access and cycle times, ease of use

and unlimited read and write endurance of a normal SRAM. Data

transfers automatically to the nonvolatile storage cells when

power loss is detected (the STORE operation). On power up,

data is automatically restored to the SRAM (the RECALL

operation). Both STORE and RECALL operations are also

available under software control.

The real time clock function provides an accurate clock with leap

year tracking and a programmable, high accuracy oscillator. The

Alarm function is programmable for one-time alarms or periodic

minutes, hours, or days alarms. There is also a programmable

watchdog timer for processor control.

Logic Block Diagram

ROW DECODERINPUT BUFFERS

COLUMN DEC

COLUMN I/O

POWER

CONTROL

HSB

STORE/

RECALL

CONTROL

SOFTWARE

DETECT A15 – A0

A12

A13

A14

A15

A16

Quantum Trap

1024 X 1024

STATIC RAM

ARRAY

1024 X 1024

STORE

RECALL

DQ0

DQ1

DQ2

DQ3

DQ4

DQ5

DQ6

DQ7

A0A1A2A3A4A10 A11

VCC VCAP

RTC

MUX A16 – A0

INT

VRTCbat

VRTCcap

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STK17TA8

Document #: 001-52039 Rev. ** Page 2 of 23

Pinouts Figure 1. Pin Diagram - 48-PIn SSOP

CAP

INT

HSB

RTCbat

RTCcap

(TOP)

Pin Descriptions

Pin Name IO Type Description

A16-A0Input Address: The 17 address inputs select one of 131,072 bytes in the nvSRAM array or one of 16 bytes

in the clock register map

DQ7-DQ0I/O Data: Bi-directional 8-bit data bus for accessing the nvSRAM and RTC

E Input Chip Enable: The active low E input selects the device

W Input Write Enable: The active low W enables data on the DQ pins to be written to the address location

selected on the falling edge of E

G Input Output Enable: The active low G input enables the data output buffers during read cycles.

De-asserting G high caused the DQ pins to tri-state.

X1Output Crystal Connection, drives crystal on startup

X2Input Crystal Connection for 32.768 kHz crystal

VRTCcap Power Supply Capacitor supplied backup RTC supply voltage (Left unconnected if VRTCbat is used)

VRTCbat Power Supply Battery supplied backup RTC supply voltage (Left unconnected if VRTCcap is used)

VCC Power Supply Power: 3.0V, +20%, -10%

HSB I/O Hardware Store Busy: When low this output indicates a Store is in progress. When pulled low external

to the chip, it will initiate a nonvolatile STORE operation. A weak pull up resistor keeps this pin high if

not connected. (Connection Optional).

INT Output Interrupt Control: Can be programmed to respond to the clock alarm, the watchdog timer and the

power monitor. Programmable to either active high (push/pull) or active low (open-drain)

VCAP Power Supply Autostore™ Capacitor: Supplies power to nvSRAM during power loss to store data from SRAM to

nonvolatile storage elements.

VSS Power Supply Ground

NC No Connect Unlabeled pins have no internal connections.

Note

1. For detailed package size specifications, See “Package Diagrams” on page 22..

Relative PCB Area Usage[1]

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STK17TA8

Document #: 001-52039 Rev. ** Page 3 of 23

Absolute Maximum Ratings

Voltage on Input Relative to Ground ................–0.1V to 4.1V

Voltage on Input Relative to VSS .........–0.5V to (VCC + 0.5V)

Voltage on DQ0-7 or HSB.....................–0.5V to (VCC + 0.5V)

Temperature under Bias ............................... –55°C to 125°C

Junction Temperature ................................... –55°C to 140°C

Storage Temperature .................................... –65°C to 150°C

Power Dissipation............................................................. 1W

DC Output Current (1 output at a time, 1s duration)..... 15mA

RF (SSOP-48) Package Thermal Characteristics

θjc 6.2 C/W; θja 51.1 [0fpm], 44.7 [200fpm], 41.8 C/W [500fpm]

Note: Stresses greater than those listed under “Absolute

Maximum Ratings” may cause permanent damage to the device.

This is a stress rating only, and functional operation of the device

at conditions above those indicated in the operational sections

of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect

reliablity.

DC Electrical Characteristics

(VCC = 2.7V-3.6V)

Symbol Parameter Commercial Industrial Units Notes

Min Max Min Max

ICC1Average VCC Current 65

tAVAV = 25 ns

tAVAV = 45 ns

Dependent on output loading and

cycle rate. Values obtained

without output loads.

ICC2Average VCC Current during

STORE

3 3 mA All Inputs Don’t Care, VCC = max

Average current for duration of

STORE

cycle (tSTORE)

ICC3Average VCC Current at tAVAV =

200ns

3V, 25°C, Typical

10 10 mA W ≥(V CC

– 0.2V)

All Other Inputs Cycling at CMOS

Levels

Dependent on output loading and

cycle rate. Values obtained

without output loads.

ICC4Average VCAP Current during

<Emphasis>AutoStore™ Cycle

3 3 mA All Inputs Don’t Care

Average current for duration of

STORE cycle (tSTORE)

ISB VCC Standby Current

(Standby, Stable CMOS Levels)

33mAE≥ (VCC -0.2V)

All Others VIN≤ 0.2V or ≥

(VCC-0.2V)

Standby current level after

nonvolatile cycle complete

IILK Input Leakage Current ±1 ±1 mA VCC = max

VIN = VSS to VCC

IOLK Off-State Output Leakage Current ±1 ±1 mA VCC = max

VIN = VSS to VCC, E or G ≥ VIH

VIH Input Logic “1” Voltage 2.0 VCC + 0.5 2.0 VCC + 0.5 V All Inputs

VIL Input Logic “0” Voltage VSS –0.5 0.8 VSS –0.5 0.8 V All Inputs

VOH Output Logic “1” Voltage 2.4 2.4 V IOUT =– 2 mA (except HSB)

VOL Output Logic “0” Voltage 0.4 0.4 V IOUT = 4 mA

Note: The HSB pin has IOUT=-10uA for VOH of 2.4V, this parameter is characterized but not tested.

Note: The INT is open-drain and does not source or sink high current when interrupt Register bit D3 is below.

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STK17TA8

Document #: 001-52039 Rev. ** Page 4 of 23

AC Test Conditions

Input Pulse Levels ....................................................0V to 3V

Input Rise and Fall Times ............................................ <5 ns

Input and Output Timing Reference Levels .................... 1.5V

Output Load..................................See Figure 2 and Figure 3

Capacitance

(TA= 25°C, f = 1.0MHz)[2]

Figure 2. AC Output Loading

Figure 3. AC Output Loading for Tristate Specs (tHZ, tLZ, tWLQZ, tWHQZ, tGLQX, tGHQZ

TAOperating Temperature 0 70 –40 85 °C

VCC Operating Voltage 2.7 3.6 2.7 3.6 V 3.0V +20%, -10%

VCAP Storage Capacitance 17 57 17 57 μF Between VCAP pin and VSS, 5V

rated.

NVCNonvolatile STORE operations 200 200 K

DATARData Retention 20 20 Years At 55 °C

DC Electrical Characteristics (continued)

(VCC = 2.7V-3.6V)

Symbol Parameter Commercial Industrial Units Notes

Min Max Min Max

Notes

2. These parameters are guaranteed but not tested.

Symbol Parameter Max Units Conditions

CIN Input Capacitance 7 pF ΔV = 0 to 3V

COUT Output Capacitance 7 pF ΔV = 0 to 3V

577 Ohms

30 pF

789 Ohms

3.0V

INCLUDING

SCOPE AND

OUTPUT

FIXTURE

577 Ohms

5 pF

789 Ohms

3.0V

INCLUDING

SCOPE AND

OUTPUT

FIXTURE

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STK17TA8

Document #: 001-52039 Rev. ** Page 5 of 23

RTC DC Characteristics

Figure 4. RTC Recommended Component Configuration

Symbol Parameter Commercial Industrial Units Notes

Min Max Min Max

IBAK RTC Backup Current — 300 — 350 nA From either VRTCcap or VRTCbat

VRTCbat RTC Battery Pin Voltage 1.8 3.3 1.8 3.3 V Typical = 3.0 Volts during normal

operation

VRTCcap RTC Capacitor Pin Voltage 1.2 2.7 1.2 2.7 V Typical = 2.4 Volts during normal

operation

tOSCS RTC Oscillator time to start — 10 — 10 sec At MIN Temperature from Power up

or Enable

—5—5 secAt25°C from Power up or Enable

Recommended Values

Y1 = 32.768 KHz

= 10M Ohm

= 0 (install cap footprint,

but leave unloaded)

= 56 pF ± 10% (do not vary from this value)

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STK17TA8

Document #: 001-52039 Rev. ** Page 6 of 23

SRAM READ Cycles #1 and #2

Figure 5. SRAM READ Cycle #1: Address Controlled[3, 4, 6]

Figure 6. SRAM READ Cycle #2: Eand G Controlled[3, 6]

Notes

3. W must be high during SRAM READ cycles.

4. Device is continuously selected with E and G both low

5. Measured ±200mV from steady state output voltage.

6. HSB must remain high during READ and WRITE cycles.

NO. Symbols Parameter STK17TA8-25 STK17TA8-45 Units

#1 #2 Alt. Min Max Min Max

ELQV tACS Chip Enable Access Time 25 45 ns

AVAV[3] tELEH[3] tRC Read Cycle Time 25 45 ns

AVQV[4] tAVQV[4] tAA Address Access Time 25 45 ns

GLQV tOE Output Enable to Data Valid 12 20 ns

AXQX[4] tAXQX[4] tOH Output Hold after Address Change 3 3 ns

ELQX tLZ Address Change or Chip Enable to Output Active 3 3 ns

EHQZ[5] tHZ Address Change or Chip Disable to Output

Inactive

10 15 ns

GLQX tOLZ Output Enable to Output Active 0 0 ns

GHQZ[5] tOHZ Output Disable to Output Inactive 10 15 ns

10 tELICCL[2] tPA Chip Enable to Power Active 0 0 ns

11 tEHICCH[2] tPS Chip Disable to Power Standby 25 45 ns

DATA VALID

tAXQX

tAVQV

DQ (DATA OUT)

ADDRESS

tAVAV

229

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STK17TA8

Document #: 001-52039 Rev. ** Page 7 of 23

SRAM WRITE Cycles #1 and #2

Figure 7. SRAM WRITE Cycle #1: WControlled[7, 8]

Figure 8. SRAM WRITE Cycle #2: EControlled[7, 8]

Notes

7. If W is low when E goes low, the outputs remain in the high-impedance state.

8. Eor W must be ≥VIH during address transitions.

NO. Symbols Parameter STK17TA8-25 STK17TA8-45 Units

#1 #2 Alt. Min Max Min Max

11 tAVAV tAVAV tWC Write Cycle Time 25 45 ns

13 tWLWH tWLEH tWP Write Pulse Width 20 30 ns

14 tELWH tELEH tCW Chip Enable to End of Write 20 30 ns

15 tDVWH tDVEH tDW Data Set-up to End of Write 10 15 ns

16 tWHDX tEHDX tDH Data Hold after End of Write 0 0 ns

17 tAVWH tAVEH tAW Address Set-up to End of Write 20 30 ns

18 tAVWL tAVEL tAS Address Set-up to Start of Write 0 0 ns

19 tWHAX tEHAX tWR Address Hold after End of Write 0 0 ns

20 tWLQZ5, 7 tWZ Write Enable to Output Disable 10 15 ns

21 tWHQX tOW Output Active after End of Write 3 3 ns

PREVIOUS DATA

DATA OUT

ADDRESS

tAVAV

tWHDX

DATA IN

tWHAX

tWLWH

tAVWL

tAVWH

DATA VALID

tWLQZ

tDVWH

HIGH IMPEDANCE

tWHQX

tELWH

DATA IN

tAVAV

tEHDX

tWLEH

tEHAX

tAVEL

tAVEH

DATA VALID

tDVEH

HIGH IMPEDANCE

tELEH

DATA OUT

ADDRESS

DATA IN

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STK17TA8

Document #: 001-52039 Rev. ** Page 8 of 23

AutoStore/Power Up Recall

Figure 9. AutoStore/Power Up RECALL

Notes

9. tHRECALL starts from the time VCC rises above VSWITCH

10. If an SRAM WRITE has not taken place since the last nonvolatile cycle, no STORE will take place

11. Industrial Grade Devices require 15 ms MAX.

NO. Symbols Parameter STK17TA8 Units Notes

Standard Alternate Min Max

22 tHRECALL Power-up RECALL Duration 40 ms 9

23 tSTORE tHLHZ STORE Cycle Duration 12.5 ms 10,11

24 VSWITCH Low Voltage Trigger Level 2.65 V

25 VCCRISE VCC Rise Time 150 μS

NOTE: Read and Write cycles will be ignored during STORE, RECALL and while VCC is below VSWITCH

23 23

22 22

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STK17TA8

Document #: 001-52039 Rev. ** Page 9 of 23

Software-Controlled STORE/RECALL Cycle

In the following table, the software controlled STORE and RECALL cycle parameters are listed. [12, 13]

Figure 10. Software STORE/RECALL Cycle: ECONTROLLED[13]

Figure 11. Software STORE/RECALL Cycle: G Controlled[13]

NO. Symbols Parameter STK17TA8-35 STK17TA8-45 Units Notes

ECont GCont Alternate Min Max Min Max

26 tAVAV tAVAV tRC STORE / RECALL Initiation Cycle

Time

25 45 ns 13

27 tAVEL tAVGL tAS Address Set-up Time 0 0 ns

28 tELEH tGLGH tCW Clock Pulse Width 20 30 ns

29 tEHAX tGHAX Address Hold Time 1 1 ns

30 tRECALL tRECALL RECALL Duration 100 100 μs

26 26

27 28

23 30

26 26

27 28

23 30

Notes

12. The software sequence is clocked on the falling edge of E controlled READs or G controlled READs

13. The six consecutive addresses must be read in the order listed in the Software STORE/RECALL Mode Selection Table W must be high during all six consecutive cycles.

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STK17TA8

Document #: 001-52039 Rev. ** Page 10 of 23

Hardware STORE Cycle

Figure 12. Hardware STORE Cycle

Soft Sequence Commands

Figure 13. Soft Sequence Commands

NO. Symbols Parameter STK17TA8 Units Notes

Standard Alternate Min Max

31 tDELAY tHLQZ Hardware STORE to SRAM Disabled 1 70 μs14

32 tHLHX Hardware STORE Pulse Width 15 ns

Notes

14. On a hardware STORE initiation, SRAM operation continues to be enabled for time tDELAY to allow READ/WRITE cycles to compete.

15. This is the amount of time that it takes to take action on a soft sequence command. Vcc power must remain high to effectively register command.

16. Commands like Store and Recall lock out I/O until operation is complete which further increases this time. See specific command.

NO. Symbols Parameter STK17TA8 Units Notes

Standard Min Max

33 tSS Soft Sequence Processing Time 70 μs 15,16

33 33

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