Intersil ISL8105BEVAL1Z Manuale utente

AN1288.1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

1-888-INTERSIL or 1-888-468-3774 |Intersil (and design) is a registered trademark of Intersil Americas Inc.

All other trademarks mentioned are the property of their respective owners.

Using the ISL8105BEVAL1Z, ISL8105BEVAL2Z

PWM Controller Evaluation Board

Introduction

The ISL8105B is a simple single-phase PWM controller for a

synchronous buck converter that operates from +5V or +12V

bias supply voltage. With integrated linear regulator, boot diode,

and gate drivers, the ISL8105B reduces external component

count and board space requirements.

The ISL8105BEVAL1Z, ISL8105BEVAL2Z evaluation board

highlights the operations of the controller in a DC/DC

application.

ISL8105BEVAL1Z , ISL8105BEVAL2Z

Reference Design

The ISL8105BEVAL1Z, ISL8105BEVAL2Z evaluation board

is designed to optimize for the output voltage and current

specifications shown in Table 1.

Two versions of the evaluation board, based on the package

type, are listed in Table 2.

Design Procedure

The following sections illustrate simple design steps and

component selections for a converter using the

ISL8105BEVAL1Z, ISL8105BEVAL2Z.

Output Inductor Selection

The output inductor is chosen by the desired inductor ripple

current, which is typically set to be approximately 40% of the

rated output current. The desired output inductor can be

calculated using Equation 1:

In the evaluation board, a 1µH inductor with 1.87mΩDCR

(Cooper Bussmmann’s HC9-1R0-R) is employed. This yields

approximately 0.44W conduction loss in the inductor.

Output Capacitor Selection

The output capacitors are generally selected by the output

voltage ripple and load transient response requirements.

ESR and capacitor charge are major contributions to the

output voltage ripple. Assuming that the total output

capacitance is sufficient, then the output voltage ripple is

dominated by the ESR, which can be calculated using

Equation 2.

To meet the 30mVP-P output voltage ripple requirement, the

effective ESR should be less than 5mΩ.

The output voltage response to a transient load is

contributed from ESL, ESR and the amount of output

capacitance. With VIN>>VOUT, the amplitude of the voltage

excursions can be approximated using Equation 3:

With 1µH inductor and 0A to 15A step load, the total output

capacitance of 1560µF is required for 80mV output voltage

transient. In the ISL8105BEVAL1Z, ISL8105BEVAL2Z

evaluation board, four of Sanyo’s 2R5TPF470ML are

employed.

Input Capacitor Selection

The input bulk capacitors selection criteria are based on the

capacitance and RMS current capability. The RMS current

rating requirement for the input capacitor is approximated in

Equation 4:

In this application, the RMS current for the input capacitors is

5.4A; therefore, three of Sanyo’s 35ME330AX are used.

Small ceramic capacitors for high frequency decoupling are

also required to control the voltage overshoot across the

MOSFETs.

MOSFET Selection

The ISL8105B requires two N-Channel power MOSFETs as

the main and the synchronous switches. These should be

selected based in rDS(ON), gate supply requirements and

thermal management requirements.

TABLE 1. ISL8105BEVAL1Z, ISL8105BEVAL2Z EVALUATION

BOARD DESIGN PARAMETERS

PARAMETER MIN TYP MAX

Input Voltage (VIN) 9.6V 12V 14.4V

Output Voltage (VOUT)1.8V

Output Voltage Ripple (VRIPPLE) 30mVP-P

Continuous Load Current 15A

Efficiency 90

TABLE 2. EVALUATION BOARDS

BOARD NAME IC PACKAGE

ISL8105BEVAL1Z ISL8105BIBZ 8 Ld SOIC

ISL8105BEVAL2Z ISL8105BIRZ 10 Ld DFN

LVIN VOUT

–

ΔI

--------------------------------VOUT

VIN

----------------

×1

FSW

------------

×=

14.4 1.8–

0.4 15⋅

--------------------------1.8

14.4

-----------

×1

300 3

×10

----------------------

×=

0.875μH=

(EQ. 1)

VRIPPLE ΔILESR⋅=(EQ. 2)

ΔVLI

tran

⋅

COUT VOUT

⋅

-------------------------------------

=(EQ. 3)

IIN RMS,IO2DD

–()

IΔ2

-------- D+= DVO

VIN

----------

=(EQ. 4)

Application Note October 30, 2008

2AN1288.1

October 30, 2008

The total power loss in MOSFET consists of conduction loss

and switching loss, as shown in Equation 5:

In this relatively small duty cycle design, the low-side

MOSFET conducts current most of the time. To optimize the

converter efficiency, select the high-side MOSFET with low

gate charge for fast switching transition and low-side

MOSFET with low rDS(ON).

To achieve the target efficiency, the budget power losses in

high-side and low-side MOSFETs are 0.5W and 1W,

respectively.

LOW-SIDE MOSFET SELECTION

The low-side MOSFET’s RMS current is approximated in

Equation 6:

Therefore, the ON-resistance of the low-side MOSFET must

be less than 5mΩ. Infineon’s BSC030N03LS is employed in

the ISL8105BEVAL1Z, ISL8105BEVAL2Z evaluation board.

The conduction loss in the low-side MOSFET is calculated

using Equation 7:

The switching loss in the low-side MOSFET is dominated by

the loss in body diode which can be calculated using

Equation 8:

Where tDis the total dead time in each switching period

(~60µs) and VFis the forward voltage drop of MOSFET’s

body diode.

The total power dissipation in the low-side MOSFET is

calculated using Equation 9:

HIGH-SIDE MOSFET SELECTION

For the high-side MOSFET selection, first we assume that

the conduction loss and the switching loss contribute evenly

to the total power dissipation.

The high-side MOSFET’s RMS current is approximated

using Equation 10:

Hence, the required ON-resistance of the high-side MOSFET is

7.3mΩ. Infineon’s BSC080N03LS is selected. The conduction

loss in the high-side MOSFET is calculated using Equation 11:

The switching loss in the high-side MOSFET can be

approximated using Equation 12:

where ttr is the combined ON and OFF MOSFET transition

times.

The total power dissipation in high-side MOSFET is shown in

Equation 13:

Overcurrent Protection Setting

The overcurrent function protects the converter from a shorted

output by using the low-side MOSFET’s rDS(ON) to monitor

the current. A resistor, RBSOC, programs the overcurrent trip

level. If overcurrent is detected, the output immediately shuts

off, it cycles the soft-start function in a hiccup mode (2 dummy

soft-start time-outs, then up to one real one) to provide fault

protection. If the shorted condition is not removed, this cycle

will continue indefinitely.

The overcurrent function will trip at a inductor current (Itrip) is

determined using Equation 14:

where IOCSET is the internal 21.5µA (typ.) OCSET current

source.

The OC trip point varies mainly due to the MOSFET’s rDS(ON)

variations. To avoid overcurrent tripping in the normal operating

load range, calculate the RBSOC resistor from Equation 14

using:

1. The maximum rDS(ON) at the highest junction temperature.

2. The minimum IOCSET from the specification table of the

datasheet.

Determine Itrip for Itrip > IOUT(MAX) + (ΔI)/2, where ΔI is the

output inductor ripple current.

PMOSFET TOT()

Pcond Psw

+= (EQ. 5)

ILRMS()

IOUT 1D–11

------ ΔIL

IOUT

-------------

⎝⎠

⎜⎟

⎛⎞

⋅+⋅⋅ 13.9A≈=(EQ. 6)

PLFET cond()

ILRMS()

2rDS ON()

LFET

⋅0.58W==

(EQ. 7)

Pdiode IOtDVFFSW

⋅⋅ ⋅ 0.3W== (EQ. 8)

PLFET TOT()

0.88W=(EQ. 9)

IH rms()

IOUT D11

------ ΔIL

IOUT

-------------

⎝⎠

⎜⎟

⎛⎞

⋅+⋅⋅ 5.85A≈=(EQ. 10)

PHFET cond()

IHRMS()

2rDS ON()

HFET

⋅0.27W==

(EQ. 11)

PHFET SW()1

---IOVIN ttr FSW

⋅⋅ ⋅⋅ 1

---COSS VIN

2FSW

⋅⋅⋅+=

0.17W=(EQ. 12)

PHFET TOT()

0.44W=(EQ. 13)

Itrip 2I•OCSET RBSOC

•

rDS ON()

---------------------------------------------------------

=(EQ. 14)

Application Note 1288

3AN1288.1

October 30, 2008

With Infineon’s BSC030N03LS as the low-side MOSFET and

RBSOC of 1.74kΩ. The overcurrent trip point on the evaluation

board has been set to 21A for 12VBIAS (17A for 5VBIAS).

Feedback Compensator

Type-III network is recommended for compensating the

feedback loop. Figure 1 shows Type-III compensation

configuration for ISL8105B.

With the inductor and output capacitor selected as described

in the previous sections, the poles and zero of the power

stage can be summarized in Equation 15:

1. With a value of 11.8kΩfor R1, select R4for the target

output voltage of 1.8V using Equation 16:

2. With the desired feedback loop bandwidth of 30kHz, R2

can be calculated using Equation 17:

3. Select C1such that FZ1 is located at 1.5kHz (~50% of

FLC):

4. Select C2such that FP1 is located at FESR:

5. Select R3such that FZ2 is located at FLC:

A more detailed explanation of designing compensation

networks for buck converters with voltage mode control can

be found in TB417 entitled “Designing Stable Compensation

Networks for Single Phase Voltage Mode Buck Regulators”.

Evaluation Board Performance

Figure 2 shows a photograph of the ISL8105BEVAL1Z.

Power and Load Connections

Terminals J1 and J2 are connected to the input of the power

stage. The IC bias supply and the converter input supply can

be together through pin 2 and 3 of the Jumper J7 to provide

single rail supply application. When using separate supplies,

provide the IC bias voltage to terminal J2 with pin 2 and pin 1

of J7 connected together. The load can be connected to

terminal J4 and J5. TP6 and TP3 can be used for DMM to

measure output voltage. The scope probe terminal (TPV01)

can be used to monitor VOUT with an oscilloscope. The push

switch, SW1, can be used to disable the controller.

FIGURE 1. VOLTAGE-MODE BUCK CONVERTER

COMPENSATION DESIGN

E/A

VREF

COMP C1

C2R3C3

VIN

PWM

CIRCUIT

HALF-BRIDGE

DRIVE

OSCILLATOR

ESR

EXTERNAL CIRCUITISL8105B

VOUT

VOSC

DCR

TGATE

BGATE

F01

2π× LC××

-------------------------------------3.7kHz==

FESR 1

2π× C ESR××

-------------------------------------------33.9kHz== (EQ. 15)

R4R1Vref

VOUT Vref

–

---------------------------------

×=

5.9kΩ=

(EQ. 16)

R2VOSC R1F0

⋅⋅

dmax VIN FLC

⋅⋅

--------------------------------------------

12kΩ=

(EQ. 17)

C11

2πR21.5 3

×10⋅⋅

--------------------------------------------

10nF≈

(EQ. 18)

C2C1

2πR2C1FESR

⋅⋅⋅ 1–

------------------------------------------------------------

390pF≈

(EQ. 19)

R3R1

150 3

×10

FLC

---------------------- 1–

--------------------------------301Ω≈=

C31

2πR3150 3

×10⋅⋅

----------------------------------------------3.3nF≈=

(EQ. 20)

FIGURE 2. ISL8105BEVAL1Z

Application Note 1288

4AN1288.1

October 30, 2008

Start-up

The ISL8105B starts up when VBIAS rises above POR

threshold and the COMP/EN rises above VDISABLE level. The

entire start-up time sequence from POR typically takes up to

23.8ms; up to 10.2ms for the delay and the Overcurrent

Protection (OCP) sample and hold operation. The initial delay

is added to allow the bias voltage to rise/exceed 6.5V, so that

the internal bias regulator can turn on cleanly. When the OCP

sampling and hold operations are done, the soft-start function

internally ramps the reference on the non-inverting terminal of

the error amp from 0V to 0.6V in 13.6ms (typ).

Figure 3 shows the start-up profile of the ISL8105BEVAL1Z,

ISL8105BEVAL2Z in relation to the start-up of the 12V input

supply and the bias supply.

Soft-Start with Pre-Biased Output

If the output is pre-biased to a voltage less than the expected

value, the ISL8105BEVAL1Z, ISL8105BEVAL2Z will detect

that condition. Neither MOSFETs will turn on until the

soft-start ramp voltage exceeds the FB voltage; VOUT starts

seamlessly ramping from there.

Output Ripple

Figure 5 shows the ripple voltage on the output of the

regulator.

Verifying Loop Gain

Figure 6 shows the measurement of loop gain of the

converter with feedback network design in the previous

sections.

FIGURE 3. SOFT-START

= 12V, V

OUT

= 1.8V, I

OUT

= 15A

COMP

VOUT

FIGURE 4. SOFT-START WITH PRE-BIASED OUTPUT

= 12V, V

OUT

= 1.8V, I

OUT

= 1A

Vout

COMP

FIGURE 5. OUTPUT RIPPLE (20MHz BW)

FIGURE 6. LOOP GAIN MEASUREMENT AT +25°C

Application Note 1288

5AN1288.1

October 30, 2008

Transient Performance

Figures 7, 8, and 9 show the response of the output when

subjected to transient loading from 0A to 15A at 1A/µs.

Efficiency

ISL8105BEVAL1Z, ISL8105BEVAL2Z based regulators

enable the design of highly efficient systems. The efficiency

of the evaluation board using a 12V input supply is shown in

Figure 10.

References

For Intersil documents available on the web, go to

http://www.intersil.com/.

1. ISL8105, ISL8105B Data Sheet, FN6306, “+5V or +12V

Single-Phase Synchronous Buck Converter PWM

ControllerwithIntegratedMOSFETGateDrivers”,Intersil

Corporation

2. Tech Brief TB417, “Designing Stable Compensation

Networks for Single Phase Voltage Mode Buck

Regulators”, Intersil Corporation

FIGURE 7. TRANSIENT RESPONSE

VOUT

FIGURE 8. TRANSIENT RESPONSE

FIGURE 9. TRANSIENT RESPONSE

FIGURE 10. EVALUATION BOARD EFFICIENCY (VOUT = 1.8V)

10 11 12 13 14 15

LOAD CURRENT (A)

EFFICIENCY (%)

0123456789

FIGURE 11. EVALUATION BOARD LINE REGUALTION

1.790

1.792

1.794

1.796

1.798

1.800

OUTPUT CURRENT (A)

OUTPUT VOLTAGE (V)

10 11 12 13 14 150123456789

Application Note 1288

6AN1288.1

October 30, 2008

ISL8105BEVAL1Z Schematic

BOOT

BGATE

VBIAS

COMP/EN

VIN

TGATE

LX VOUT

TitleSize Rev

Date: Sheet of

ISL8105BEVAL1Z

11Thursday, January 31, 2008

1001 Murphy Ranch Rd.

Milpitas, CA, 95035

Intersil Corporation

TitleSize Rev

Date: Sheet of

ISL8105BEVAL1Z

11Thursday, January 31, 2008

1001 Murphy Ranch Rd.

Milpitas, CA, 95035

Intersil Corporation

TitleSize Rev

Date: Sheet of

ISL8105BEVAL1Z

11Thursday, January 31, 2008

1001 Murphy Ranch Rd.

Milpitas, CA, 95035

Intersil Corporation

TP3TP3

C24

DNP

C24

DNP

TP7TP7

TP10TP10

J7J7

DNP

C13

330uF

C13

330uF

VIN

C21

470uF

C21

470uF

TP6TP6

DNP

C19

470uF

C19

470uF

GND

C17

DNP

C17

DNP

C11

330uF

C11

330uF

680pF

VBIAS

DNP

C18

470uF

C18

470uF

ISL8105B

TGATE 2

BGATE/BSOC 4

VBIAS

COMP/EN

GND

BOOT 1

LX 8

DNP

TP8TP8

11.8k

C28

0.1uF

C28

0.1uF

DNP

C20

470uF

C20

470uF

C25

DNP

C25

DNP

1uH

2 1

GND

301

C23

DNP

C23

DNP

3.3nF

GND

DNP

1.74k

C14

DNP

C14

DNP

1.0uF

C16

DNP

C16

DNP

C10

1uF

C10

1uF

DNP

C26

DNP

C26

DNP

0.1uF

Q3Q3

5.9k

12k

C27

0.1uF

C27

0.1uF

Probe Socket

TPVO1

Probe Socket

TPVO1

1uF

TP4TP4

4.7

10nF

SW1SW1

C15

DNP

C15

DNP

TP9TP9

Q1Q1

C12

330uF

C12

330uF

390pF

VOUT

TP2TP2 C22

DNP

C22

DNP

Application Note 1288

7AN1288.1

October 30, 2008

ISL8105BEVAL1Z Bill of Materials

ID REFERENCE QTY PART NUMBER PART TYPE DESCRIPTION PACKAGE VENDOR

1 U1 1 ISL8105BIBZ IC, Linear IC, Single PWM Controller 8 LD SOIC Intersil

2 Q1 1 BSC080N30LS G MOSFET 30V N-Channel MOSFET TDSON-08 Infineon

3 Q3 1 BSC030N03LS G MOSFET 30V N-Channel MOSFET TDSON-08 Infineon

4 Q2, Q4, Q5, Q6 DNP MOSFET

5 L1 1 HC9-1R0-R Inductor 1.0µH, high current inductor SMD Cooper Bussmann

6 SW1 1 EVQ-PAD04M Push Switch SWITCH-PUSH, TH, 6mm,

1P, PUSHB MOM-SPST PANASONIC

CAPACITORS

7 C1 1 Capacitor, Ceramic,

X7R 10nF, 50V, 10%, ROHS SM_0603 TDK/Generic

8 C2 1 Capacitor, Ceramic,

X7R 390pF, 50V, 10%, ROHS SM_0603 TDK/Generic

9 C3 1 Capacitor, Ceramic,

X7R 3.3nF, 50V, 10%, ROHS SM_0603 TDK/Generic

10 C4, C9, C10 3 Capacitor, Ceramic,

X7R 1µF, 25V, 10%, X7R, ROHS SM_0805 TDK/Generic

11 C5, C27, C28 3 Capacitor, Ceramic,

X7R 0.1µF, 16V, 10%, ROHS SM_0603 TDK/Generic

12 C8 1 Capacitor, Ceramic,

X7R 680pF, 50V, 10%, ROHS SM_0603 TDK/Generic

13 C11, C12, C13 3 35ME330AX Aluminum Capacitor 330µF, 35V RAD 10x20 Sanyo

14 C18, C19, C20, C21 4 2R5TPF470ML Organic Alumium

Capacitor 470µF, 2.5V, 20%, ROHS Case D3L Sanyo

15 C6, C7, C14, C15, C16,C17,

C22, C23, C24, C25, C26 DNP

RESISTORS

16 R1 1 Resistor, Film 11.8kΩ, 1%, 1/16W SM_0603 Panasonic/Generic

17 R2 1 Resistor, Film 12kΩ, 1%, 1/16W SM_0603 Panasonic/Generic

18 R3 1 Resistor, Film 301Ω, 1%, 1/16W SM_0603 Panasonic/Generic

19 R4 1 Resistor, Film 5.9kΩ, 1%, 1/16W SM_0603 Panasonic/Generic

20 R5 1 Resistor, Film 1.74kΩ, 1%, 1/16W SM_0603 Panasonic/Generic

21 R6 1 Resistor, Film 4.7Ω, 1%, 1/16W SM_0603 Panasonic/Generic

22 R7, R8 DNP SM_0603

OTHERS

23 TPVO1 DNP Terminal, Scope

Probe CONN-PIN RECEPTACLE,

0.086 DIA, 0.200 L, ROHS MILL-MAX

24 J1, J4 2 111-0702-001 Blinding Post CONN-GEN, BIND. POST,

RED, THMBNUT-GND JOHNSON

COMPONENTS

25 J3, J5 2 111-0703-001 Blinding Post CONN-GEN, BIND. POST,

BLACK, THMBNUT-GND JOHNSON

COMPONENTS

26 J2, J6 2 1514-2 Turrett Post CONN-TURRET, TERMINAL

POST, TH, ROHS Keystone

27 J7 1 68000-236-1X3 3-pin Jumper Berg/FCI

28 TP3, TP6, TP9, TP10 4 5002 Test Point CONN-MINI TEST POINT,

VERTICAL, WHITE, ROHS Keystone

29 TP2, TP4, TP7, TP8 DNP 5002 Test Point CONN-MINI TEST POINT,

VERTICAL, WHITE, ROHS Keystone

Application Note 1288

8AN1288.1

October 30, 2008

ISL8105BEVAL1Z Printed Circuit Board Layers

FIGURE 12. ISL8105BEVAL1Z - TOP LAYER (SILKSCREEN) FIGURE 13. ISL8105BEVAL1Z - TOP LAYER

(COMPONENT SIDE)

FIGURE 14. ISL8105BEVAL1Z - LAYER 2 FIGURE 15. ISL8105BEVAL1Z - LAYER 3

FIGURE 16. ISL8105BEVAL1Z - BOTTOM LAYER FIGURE 17. ISL8105BEVAL1Z - BOTTOM LAYER

(SOLDER SIDE)

Application Note 1288

9AN1288.1

October 30, 2008

Application Note 1288

ISL8105BEVAL2Z Schematic

VBIAS

COMP/EN

VIN

TGATE

VOUT

BGATE

BOOT

TitleSize Rev

Date: Sheet of

ISL8105BEVAL2Z

11Friday, July 11, 2008

1001 Murphy Ranch Rd.

Milpitas, CA, 95035

Intersil Corporation

TitleSize Rev

Date: Sheet of

ISL8105BEVAL2Z

11Friday, July 11, 2008

1001 Murphy Ranch Rd.

Milpitas, CA, 95035

Intersil Corporation

TitleSize Rev

Date: Sheet of

ISL8105BEVAL2Z

11Friday, July 11, 2008

1001 Murphy Ranch Rd.

Milpitas, CA, 95035

Intersil Corporation

DNP

C22

DNP

C22

DNP

C10

1uF

C10

1uF

TP2TP2

VOUT

12k

12k R4

5.9k

GND

11.8k

C13

330uF

C13

330uF

C14

DNP

C14

DNP

C19

470uF

C19

470uF

1.74k

Q1Q1

DNP

TP9TP9

TP8TP8

DNP

TP10TP10

Q3Q3

C20

470uF

C20

470uF

SW1SW1

DNP

1uH

2 1

10nF

DNP

C23

DNP

C23

DNP

C16

DNP

C16

DNP

ISL8105B DFN

TGATE 2

BGATE/BSOC 5

VBIAS

COMP/EN

GND

BOOT 1

LX 10

NC1 3

NC2

301

VBIAS

VBIAS TP7TP7

1.0uF

DNP

GND

Probe Socket

TPVO1

Probe Socket

TPVO1

680pF

0.1uF

C18

470uF

C18

470uF

C26

DNP

C26

DNP

4.7

C21

470uF

C21

470uF C24

DNP

C24

DNP

VIN

390pF

GND

C12

330uF

C12

330uF

TP4TP4

C15

DNP

C15

DNP

J7J7

C28

0.1uF

C28

0.1uF

C11

330uF

C11

330uF

C17

DNP

C17

DNP

1uF

DNP

TP3TP3

3.3nF

C25

DNP

C25

DNP

TP6TP6

C27

0.1uF

C27

0.1uF

10 AN1288.1

October 30, 2008

Application Note 1288

ISL8105BEVAL2Z Bill of Materials

ID REFERENCE QTY PART NUMBER PART TYPE DESCRIPTION PACKAGE VENDOR

1 U1 1 ISL8105BIRZ IC, Linear IC, Single PWM Controller 10 LD DFN Intersil

2 Q1 1 BSC080N30LS G MOSFET 30V N-Channel MOSFET TDSON-08 Infineon

3 Q3 1 BSC030N03LS G MOSFET 30V N-Channel MOSFET TDSON-08 Infineon

4 Q2, Q4, Q5, Q6 DNP MOSFET

5 L1 1 HC9-1R0-R Inductor 1.0µH, high current inductor SMD Cooper Bussmann

6 SW1 1 EVQ-PAD04M Push Switch SWITCH-PUSH, TH, 6mm,

1P, PUSHB MOM-SPST PANASONIC

CAPACITORS

7 C1 1 Capacitor, Ceramic,

X7R 10nF, 50V, 10%, ROHS SM_0603 TDK/Generic

8 C2 1 Capacitor, Ceramic,

X7R 390pF, 50V, 10%, ROHS SM_0603 TDK/Generic

9 C3 1 Capacitor, Ceramic,

X7R 3.3nF, 50V, 10%, ROHS SM_0603 TDK/Generic

10 C4, C9, C10 3 Capacitor, Ceramic,

X7R 1µF, 25V, 10%, X7R, ROHS SM_0805 TDK/Generic

11 C5, C27, C28 3 Capacitor, Ceramic,

X7R 0.1µF, 16V, 10%, ROHS SM_0603 TDK/Generic

12 C8 1 Capacitor, Ceramic,

X7R 680pF, 50V, 10%, ROHS SM_0603 TDK/Generic

13 C11, C12, C13 3 35ME330AX Aluminum Capacitor 330µF, 35V RAD 10x20 Sanyo

14 C18, C19, C20, C21 4 2R5TPF470ML Organic Alumium

Capacitor 470µF, 2.5V, 20%, ROHS Case D3L Sanyo

15 C6, C7, C14, C15, C16, C17,

C22, C23, C24, C25, C26 DNP

RESISTORS

16 R1 1 Resistor, Film 11.8kΩ, 1%, 1/16W SM_0603 Panasonic/Generic

17 R2 1 Resistor, Film 12kΩ, 1%, 1/16W SM_0603 Panasonic/Generic

18 R3 1 Resistor, Film 301Ω, 1%, 1/16W SM_0603 Panasonic/Generic

19 R4 1 Resistor, Film 5.9kΩ, 1%, 1/16W SM_0603 Panasonic/Generic

20 R5 1 Resistor, Film 1.74kΩ, 1%, 1/16W SM_0603 Panasonic/Generic

21 R6 1 Resistor, Film 4.7Ω, 1%, 1/16W SM_0603 Panasonic/Generic

22 R7, R8 DNP SM_0603

OTHERS

23 TPVO1 DNP Terminal, Scope

Probe CONN-PIN RECEPTACLE,

0.086 DIA, 0.200 L, ROHS MILL-MAX

24 J1, J4 2 111-0702-001 Blinding Post CONN-GEN, BIND. POST,

RED, THMBNUT-GND JOHNSON

COMPONENTS

25 J3, J5 2 111-0703-001 Blinding Post CONN-GEN, BIND. POST,

BLACK, THMBNUT-GND JOHNSON

COMPONENTS

26 J2, J6 2 1514-2 Turrett Post CONN-TURRET, TERMINAL

POST, TH, ROHS Keystone

27 J7 1 68000-236-1X3 3-pin Jumper Berg/FCI

28 TP3, TP6, TP9, TP10 4 5002 Test Point CONN-MINI TEST POINT,

VERTICAL, WHITE, ROHS Keystone

29 TP2, TP4, TP7, TP8 DNP 5002 Test Point CONN-MINI TEST POINT,

VERTICAL, WHITE, ROHS Keystone

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