Keysight B2900A Manuale utente

Keysight Technologies

Making Field Effect Transistor

Characterization Using SMU

B2900A Precision Source/Measure Unit

Demo Guide

The Keysight’s B2900A Series Precision Source/Measure Unit (SMU) is a compact and

cost-effective bench-top SMU with the capability to output and measure both voltage

and current. The B2900A SMU enables you to make a wide range of current versus

voltage (IV) measurements more accurately and quickly than ever before. In addition, the

B2900A SMU comes with an intuitive graphical user interface (GUI) and free PC-based

application software that make it easy for you to begin making productive measurements

immediately. In general, Field effect transistor (FET) characterization requires applying

different voltages and currents under either constant or swept conditions to the

transistor terminals. The B2902A and B2912A have two SMU channels, with each

channel possessing accurate IV measurement capabilities as well as the ability to supply

either constant or swept voltage/current. This makes the B2902A and B2912A excellent

choices for accurate IV characterization of FETs.

This demonstration guide shows how easily you can make undertake FET

characterization using the B2900A SMU.

Introduction

Required Instrument and Accessories

All of the accessories required to perform the demos described in this demonstration guide

are provided as a low current demo kit that is included with some of Keysight B2902A/12A

demo units except for a eld effect transistor.

B2902A/12A 2Ch SMU

N1294A-001 Banana-to-Triax Adapter x2

N1295A Test Fixture

Field Effect Transistor16494A-001 Triax cable x4

03 | Keysight | Making Field Effect Transistor Characterization Using SMU – Demo Guide

Measurement Concept

An IV characteristics measurement of a field effect transistor is made based on the

following:

– Sourcing voltage from two channels to activate a transistor.

– The two channels work simultaneously to make measurements.

– The limit value feature prevents the instrument from sourcing too much even if the

Source value is increased.

– Stepping voltages from start voltage to stop voltage to make current measurements

at each voltage step.

– Voltage steps are sourced from internal voltage sources.

– Current measurements are made by internal current meters.

– Complicated measurements can be easily configured using Intuitive Graphical User

Interface (GUI).

– The current-voltage curve can be easily seen by changing View mode.

1.0E-13

1.0E-11

1.0E-09

1.0E-07

1.0E-05

1.0E-03

1.0E-01

-0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0

Drain Current [A]

Gate Voltage [V]

FET Id-Vg Characteristics

Drain Current

Figure 1. FET Id-Vg Characteristics

Figure 2. Connection diagram

A-

High Force

Gate

Ch1 A

Ch2

FET

Low Force

Drain

Source

Ch1

Source Mode

Start Value

Stop Value

Points

Current Limit

: Gate

: Voltage

: 0 V

: 2 V

: 101

: 1 uA

Ch2

Source Mode

Start Value

Stop Value

Points

Current Limit

: Drain

: Voltage

: 2 V

: 101

: 100 mA

DUT : FET

04 | Keysight | Making Field Effect Transistor Characterization Using SMU – Demo Guide

Setup

1. Put the device on the device socket in the fixture

(The FET Source, Gate and Drain are connected to 1, 2 and 3 respectively. If device has a

substrate terminal, it is connected to 4.).

2. Put the N1294A-001 on the Ch 1 output terminals of the B2900A SMU.

3. Put the N1294A-001 on the Ch 2 output terminals of the B2900A SMU.

4. Connect the N1294A-001 Ch 1 Low terminal to the fixture terminal 1 with a triaxial cable.

5. Connect the N1294A-001 Ch 1 High terminal to the fixture terminal 2 with a triaxial cable.

6. Connect the N1294A-001 Ch 2 Low terminal to the fixture terminal 4 with a triaxial cable.

7. Connect the N1294A-001 Ch 2 High terminal to the fixture terminal 3 with a triaxial cable.

8. Connect terminals 1to 4on the fixture with a black Pin-Plug Cable.

9. Close the fixture cover.

Triaxial Cable

Low Force

High Force

Low Force

High Force

Ch1

Ch2

N1294A-001 Triaxial Cable

Close the fixture cover

Source

Drain

Gate

Make sure that the connection between the output terminals and the N1294A-001 Banana to

Triax Adaptor is secure, because a loose connection can affect the measurement results.

There is no space between the adaptor

and the output terminals

There is some space between the adaptor

and the output terminals

Proper connection Improper connection

LooseOK

05 | Keysight | Making Field Effect Transistor Characterization Using SMU – Demo Guide

Demonstration

1. Change View mode to Channel 1 Single View

1) Press repeatedly until the Channel 1

Single View is displayed.

2. Configure the Channel 1 condition to source and measure

Press to edit the Source function, and then select to set the Source function to

Voltage source.

2) Press to edit the Source value, and then enter 0 V to set the Source value to 0 V.

3) Press to edit the Limit value, and then enter 1 µAto set the Limit value to 1 µA.

4) Press to configure the Measurement parameter, and then select to set the

Measurement parameter to Current.

LAB: Make Field Effect Transistor Characterization using SMU

Objective

This demo explains how to make a

voltage sweep measurement synchro-

nously using 2 channels to make a field

effect transistor IV characterization

Procedure

1. Change the View mode to the

Channel 1 Single View.

2. Configure the Channel 1 condition

to source and measure.

3. Change the View mode to the

Channel 2 Single View.

4. Configure the Channel 2 condition

to source and measure.

5. Change the View mode to Graph

View.

6. Perform the measurement.

7. View the measurement result

graph.

(Optional)

8. Configure the measurement

speed.

9. Configure the measurement range

operation.

10. Configure the measurement trigger

delay time.

11. View the list of measurement

results.

06 | Keysight | Making Field Effect Transistor Characterization Using SMU – Demo Guide

Press to change the keys shown in Assist keys, and then press to show

Sweep Sub-Panel.

6) Press , then press to turn on Single Linear Sweep Mode. After turning on

Single Linear Sweep Mode, you can see Source Shape which shows the single linear

sweep mode.

7) Rotate to select Channel 1 Sweep Parameters and set them up as below.

(Start: 0 V, Stop: 2 V, Points: 101, Step: 20 mV)

3. Change the View mode to the Channel 2 Single View

Press repeatedly until the Channel 2

Single View is displayed.

07 | Keysight | Making Field Effect Transistor Characterization Using SMU – Demo Guide

4. Configure the Channel 2 condition to source and measure

1) Press to edit the Source function then select to set the Source function

to Voltage source.

2) Press to edit the Source value, and then enter 0 V to set the Source value to 0 V.

3) Press to edit the Limit value, and then enter 100 mA to set the Limit value to 100 mA.

4) Press to configure the Measurement parameter, and then select to set the

Measurement parameter to Current.

5) Rotate and press to edit the Channel 2 sweep parameters

08 | Keysight | Making Field Effect Transistor Characterization Using SMU – Demo Guide

6) Then press to turn on the Single Linear Sweep Mode. After turning on the

Single Linear Sweep Mode, you can see the Source Shape which shows single linear

sweep mode.

7) Rotate to select the Channel 2 Sweep Parameters and set them up as below.

(Start: 2 V, Stop: 2 V, Points: 101, Step: 0 mV)

5. Change the View mode to Graph View

1) Press repeatedly until Graph View is displayed.

2) Rotate and press to edit the X-axis data type.

3) Press , and then select to set the X-axis data type to Channel 1 voltage.

09 | Keysight | Making Field Effect Transistor Characterization Using SMU – Demo Guide

6. Perform the measurement

1) Press Ch1 and Ch2 to turn on both Channel Output relays.

2) Press to perform a sweep measurement.

(The status information will show during the measurement.)

7. View the measurement result graph

1) Press to adjust the scale of the graph after finishing the measurement. Now

you can see the measurement result on the GUI of the B2900A SMU as below.

2) To change the Graph scaling of the Y-axis from LINEAR to LOG, rotate and

press to select the Y-axis scaling.

3) To change the Graph scale value of the Y-axis, rotate and press to modify the

Y-axis scale value.

10 | Keysight | Making Field Effect Transistor Characterization Using SMU – Demo Guide

8. (Optional) Configure the measurement speed

In the default setting, the instrument selects the appropriate measurement speed

and range automatically to get the fine accuracy. However, you can also specify these

parameters on the GUI of the B2902/12A to meet a variety of the requirement to the

measurement conditions.

For example, let’s try to change the measurement speed to NORMAL to make a mea-

surement more carefully. If you select NORMAL, the aperture time is set to 1 PLC. Here,

PLC stands for power line cycle and the specified number of power line cycles is used

per a measurement.

1) Press repeatedly until the Channel 2

Single View is displayed.

2) Press to edit the Measurement speed, and then select to set it to

NORMAL. (If you can’t see in Assist keys, press to change the keys shown

in Assist keys.)

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